FCP290N80 Todos los transistores

 

FCP290N80 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FCP290N80

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 212 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 800 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 17 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 14 nS

Cossⓘ - Capacitancia de salida: 75 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.29 Ohm

Encapsulados: TO220

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FCP290N80 datasheet

 ..1. Size:890K  fairchild semi
fcp290n80.pdf pdf_icon

FCP290N80

December 2015 FCP290N80 N-Channel SuperFET II MOSFET 800 V, 17 A, 0.29 Features Description Typ. RDS(on) = 0.245 SuperFET II MOSFET is Fairchild Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Ultra Low Gate Charge (Typ. Qg = 58 nC) charge balance technology for outstanding low on-resistance Low Eoss (Typ. 5.6 uJ

 ..2. Size:934K  onsemi
fcp290n80.pdf pdf_icon

FCP290N80

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 ..3. Size:206K  inchange semiconductor
fcp290n80.pdf pdf_icon

FCP290N80

INCHANGE Semiconductor isc N-Channel MOSFET Transistor FCP290N80 FEATURES With TO-220 packaging Low switching loss Ultra low gate charge Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operationz APPLICATIONS Switching applications AC-DC converters LED lighting Uninterruptible power supply ABSOLU

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