FCPF400N80ZCN MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

FCPF400N80ZCN datasheet

..1. Size:221K inchange semiconductor
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INCHANGE Semiconductor isc N-Channel MOSFET Transistor FCPF400N80ZCN FEATURES Drain-source on-resistance RDS(on) 0.4 @10V Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS AC-DC Power Supply LED Lighting ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT

3.1. Size:900K fairchild semi
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September 2014 FCPF400N80ZL1 N-Channel SuperFET II MOSFET 800 V, 11 A, 400 m Features Description Typ. RDS(on) = 340 m SuperFET II MOSFET is Fairchild Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Ultra Low Gate Charge (Typ. Qg = 43 nC) charge balance technology for outstanding low on-resistance Low Eoss (Typ. 4.1 u

3.2. Size:605K fairchild semi
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November 2014 FCPF400N80Z N-Channel SuperFET II MOSFET 800 V, 11 A, 400 m Features Description Typ. RDS(on) = 340 m SuperFET II MOSFET is Fairchild Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Ultra Low Gate Charge (Typ. Qg = 43 nC) charge balance technology for outstanding low on-resistance Low Eoss (Typ. 4.1 uJ @ 400

3.3. Size:746K onsemi
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Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur