IPA60R170CFD7 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IPA60R170CFD7
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 26 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua
de drenaje: 8 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 15 nS
Cossⓘ - Capacitancia de salida: 22 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.17 Ohm
Encapsulados: TO220F
Búsqueda de reemplazo de IPA60R170CFD7 MOSFET
- Selecciónⓘ de transistores por parámetros
IPA60R170CFD7 datasheet
..1. Size:1126K infineon
ipa60r170cfd7.pdf 
IPA60R170CFD7 MOSFET PG-TO 220 FP 600V CoolMOS CFD7 Power Device CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS CFD7 is the successor to the CoolMOS CFD2 series and is an optimized platform tailored to target soft switching applications such
..2. Size:201K inchange semiconductor
ipa60r170cfd7.pdf
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA60R170CFD7 FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATI
7.1. Size:1140K 1
ipa60r180c7.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C7 600V CoolMOS C7 Power Transistor IPA60R180C7 Data Sheet Rev. 2.0 Final Power Management & Multimarket 600V CoolMOS C7 Power Transistor IPA60R180C7 TO-220 FP 1 Description CoolMOS C7 is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and
7.2. Size:1019K infineon
ipa60r160c6 ipb60r160c6 ipp60r160c6 ipw60r160c6.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V 600V CoolMOS C6 Power Transistor IPx60R160C6 Data Sheet Rev. 2.3 Final Power Management & Multimarket 600V CoolMOS C6 Power Transistor IPA60R160C6, IPB60R160C6 IPP60R160C6 IPW60R160C6 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunct
7.3. Size:410K infineon
ipa60r199cp.pdf
IPA60R199CP CoolMOS Power Transistor Product Summary Features V @ Tj,max 650 V DS Lowest figure-of-merit RONxQg R @T = 25 C 0.199 DS(on),max j Ultra low gate charge Q 32 nC g,typ Extreme dv/dt rated High peak current capability PG-TO220 Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant CoolMOS CP is desi
7.4. Size:857K infineon
ipa60r1k5ce.pdf
IPA60R1K5CE MOSFET TO-220 FP 600V CoolMOS CE Power Transistor CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS CE is a price-performance optimized platform enabling to target cost sensitive applications in Consumer and Lighting markets by still meeting hig
7.5. Size:851K infineon
ipw60r190e6 ipp60r190e6 ipa60r190e6.pdf
C lMO e n i t I 1 I 1 I 1 O 47 O O 1 Descripti n t b C lMO i e l ti n te n l i lt e p e MO e i ne in t t e pej n ti n ) pin iple n pi neee b In ine n e n l ie C lMO eie mbine t e expeien e t e le in MO pplie it i l inn ti n e e ltin e i e p i e ll bene it t it in MO ile n t i i in e e e xtemel l it in n n ti n l e m ke it in
7.6. Size:1110K infineon
ipa60r145cfd7.pdf
IPA60R145CFD7 MOSFET PG-TO 220 FP 600V CoolMOS CFD7 Power Device CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS CFD7 is the successor to the CoolMOS CFD2 series and is an optimized platform tailored to target soft switching applications such
7.7. Size:1723K infineon
ipa60r160c6.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R160C6 Data Sheet Rev. 2.1, 2010-02-09 Final Industrial & Multimarket 600V CoolMOS C6 Power Transistor IPA60R160C6, IPB60R160C6 IPP60R160C6 IPW60R160C6 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superj
7.8. Size:1150K infineon
ipa60r190e6.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 600V CoolMOS E6 Power Transistor IPx60R190E6 Data Sheet Rev. 2.0, 2010-05-03 Final Industrial & Multimarket 600V CoolMOS E6 Power Transistor IPP60R190E6, IPA60R190E6 IPW60R190E6 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ)
7.9. Size:557K infineon
ipa60r125cp.pdf
IPA60R125CP C IMOS $;B1= '=- >5>?;= $=;0@/? &@99-=D Features 1j max 650 V !0 V 4DGA9L>9 7 HI / >C 1, #JAAE6@ DS on Y 0.125 DS(on) max j V 2 AIG6 ADL IN V . J6A>;> 9 for industrial grade applications 688DG9>CC6CI; Halogen free mold compound
7.10. Size:1102K infineon
ipa60r120p7.pdf
IPA60R120P7 MOSFET PG-TO 220 FP 600V CoolMOS P7 Power Device The CoolMOS 7th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 series is the successor to the CoolMOS P6 series. It combines the benefits of a fast switching SJ MOSFET
7.11. Size:2872K infineon
ipa60r190p6 ipp60r190p6 ipw60r190p6.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS P6 600V CoolMOS P6 Power Transistor IPx60R190P6 Data Sheet Rev. 2.1 Final Power Management & Multimarket 600V CoolMOS P6 Power Transistor IPW60R190P6, IPP60R190P6, IPA60R190P6 TO-247 TO-220 TO-220 FP 1 Description tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed accordi
7.12. Size:561K infineon
ipa60r199cpa.pdf
IPA60R199CP C IMOS $;B1= '=- >5>?;= $=;0@/? &@99-=D Features @ Tj max 650 V !0 V )DL HI ;>I / xQg ON Y 0.199 DS(on) max j V 2 AIG6 ADL IN PG TO220 V . J6A>;> 9 for industrial grade applications 688DG9>CC6CI; Halogen free mold compound ;;8
7.13. Size:2645K infineon
ipw60r160p6 ipb60r160p6 ipp60r160p6 ipa60r160p6.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS P6 600V CoolMOS P6 Power Transistor IPx60R160P6 Data Sheet Rev. 2.2 Final Power Management & Multimarket 600V CoolMOS P6 Power Transistor IPW60R160P6, IPB60R160P6, IPP60R160P6, IPA60R160P6 TO-247 D PAK TO-220 1 Description tab tab CoolMOS is a revolutionary technology for high voltage power MOSFETs,
7.14. Size:1105K infineon
ipa60r125cfd7.pdf
IPA60R125CFD7 MOSFET PG-TO 220 FP 600V CoolMOS CFD7 Power Device CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS CFD7 is the successor to the CoolMOS CFD2 series and is an optimized platform tailored to target soft switching applications such
7.15. Size:2729K infineon
ipa60r125p6 ipp60r125p6 ipw60r125p6.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS P6 600V CoolMOS P6 Power Transistor IPx60R125P6 Data Sheet Rev. 2.0 Final Power Management & Multimarket 600V CoolMOS P6 Power Transistor IPW60R125P6, IPP60R125P6, IPA60R125P6 TO-247 TO-220 TO-220 FP 1 Description tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed accordi
7.16. Size:865K infineon
ipa60r1k0ce.pdf
IPA60R1K0CE MOSFET TO-220 FP 600V CoolMOS CE Power Transistor CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS CE is a price-performance optimized platform enabling to target cost sensitive applications in Consumer and Lighting markets by still meeting hig
7.17. Size:763K infineon
ipa60r180p7s.pdf
IPA60R180P7S MOSFET PG-TO 220 FP 600V CoolMOS P7 Power Device The CoolMOS 7th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 series is the successor to the CoolMOS P6 series. It combines the benefits of a fast switching SJ MOSFE
7.18. Size:1139K infineon
ipa60r120c7.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C7 600V CoolMOS C7 Power Transistor IPA60R120C7 Data Sheet Rev. 2.0 Final Power Management & Multimarket 600V CoolMOS C7 Power Transistor IPA60R120C7 TO-220 FP 1 Description CoolMOS C7 is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and
7.19. Size:1214K infineon
ipa60r190c6 ipb60r190c6 ipi60r190c6 ipp60r190c6 ipw60r190c6.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V 600V CoolMOS C6 Power Transistor IPx60R190C6 Data Sheet Rev. 2.3 Final Power Management & Multimarket 600V CoolMOS C6 Power Transistor IPA60R190C6, IPB60R190C6 IPI60R190C6, IPP60R190C6 IPW60R190C6 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to
7.20. Size:606K infineon
ipa60r165cp.pdf
IPA60R165CP CoolMOS Power Transistor Product Summary Features V 1j max 650 V !0 V )DL HI ;>I / xQg ON R @T Y 0.165 DS(on) max j V 2 AIG6 ADL IN V . J6A>;> 9 for industrial grade applications 688DG9>CC6CI; Halogen free mold compound PG TO220
7.21. Size:1110K infineon
ipa60r180p7.pdf
IPA60R180P7 MOSFET PG-TO 220 FP 600V CoolMOS P7 Power Device The CoolMOS 7th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 series is the successor to the CoolMOS P6 series. It combines the benefits of a fast switching SJ MOSFET
7.22. Size:3091K infineon
ipw60r190p6 ipb60r190p6 ipp60r190p6 ipa60r190p6.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS P6 600V CoolMOS P6 Power Transistor IPx60R190P6 Data Sheet Rev. 2.2 Final Power Management & Multimarket 600V CoolMOS P6 Power Transistor IPW60R190P6, IPB60R190P6, IPP60R190P6, IPA60R190P6 TO-247 D PAK TO-220 1 Description tab tab CoolMOS is a revolutionary technology for high voltage power MOSFETs,
7.23. Size:1495K infineon
ipa60r190c6.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R190C6 Data Sheet Rev. 2.1, 2010-02-09 Final Industrial & Multimarket 600V CoolMOS C6 Power Transistor IPA60R190C6, IPB60R190C6 IPI60R190C6, IPP60R190C6 IPW60R190C6 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according
7.24. Size:1257K infineon
ipa60r125c6 ipb60r125c6 ipp60r125c6 ipw60r125c6.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V 600V CoolMOS C6 Power Transistor IPx60R125C6 Data Sheet Rev. 2.3 Final Power Management & Multimarket 600V C IMOS C6 P wer Transist r IPA60R125C6, IPB60R125C6 IPP60R125C6 IPW60R125C6 1 Descripti n CoolMOS is a revolutionary technology for high voltage power MOSFETs designed according to the superj
7.25. Size:1102K infineon
ipa60r160p7.pdf
IPA60R160P7 MOSFET PG-TO 220 FP 600V CoolMOS P7 Power Device The CoolMOS 7th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 series is the successor to the CoolMOS P6 series. It combines the benefits of a fast switching SJ MOSFET
7.26. Size:2788K infineon
ipw60r125p6 ipp60r125p6 ipa60r125p6.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS P6 600V CoolMOS P6 Power Transistor IPx60R125P6 Data Sheet Rev. 2.0 Final Power Management & Multimarket 600V CoolMOS P6 Power Transistor IPW60R125P6, IPP60R125P6, IPA60R125P6 TO-247 TO-220 TO-220 FP 1 Description tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed accordi
7.27. Size:2909K infineon
ipa60r160p6 ipp60r160p6 ipw60r160p6.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS P6 600V CoolMOS P6 Power Transistor IPx60R160P6 Data Sheet Rev. 2.1 Final Power Management & Multimarket 600V CoolMOS P6 Power Transistor IPW60R160P6, IPP60R160P6, IPA60R160P6 TO-247 TO-220 TO-220 FP 1 Description tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed accordi
7.28. Size:1165K infineon
ipa60r180c7.pdf
IPA60R180C7 MOSFET PG-TO 220 FP 600V CoolMOS C7 Power Device CoolMOS C7 is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. 600V CoolMOS C7 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The 600V C7 is the first technology ever w
7.29. Size:240K inchange semiconductor
ipa60r199cp.pdf
isc N-Channel MOSFET Transistor IPA60R199CP, IIPA60R199CP FEATURES Static drain-source on-resistance RDS(on) 0.199 High peak current capability Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Hard switching SMPS topologies ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAM
7.30. Size:201K inchange semiconductor
ipa60r1k5ce.pdf
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA60R1K5CE FEATURES With TO-220F package Low input capacitance and gate charge Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAME
7.31. Size:201K inchange semiconductor
ipa60r160c6.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPA60R160C6 FEATURES With TO-220F packaging High speed switching Very high commutation ruggedness Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operationz APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VA
7.32. Size:225K inchange semiconductor
ipa60r190p6.pdf
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA60R190P6 FEATURES Drain Source Voltage- V =500V(Min) DSS Static Drain-Source On-Resistance R = 0.19 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARA
7.33. Size:223K inchange semiconductor
ipa60r190e6.pdf
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA60R190E6 FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATING
7.34. Size:223K inchange semiconductor
ipa60r160p6.pdf
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA60R160P6 FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATING
7.35. Size:201K inchange semiconductor
ipa60r125cp.pdf
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA60R125CP FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATING
7.36. Size:239K inchange semiconductor
ipa60r120p7.pdf
isc N-Channel MOSFET Transistor IPA60R120P7 FEATURES Drain-source on-resistance RDS(on) 0.12 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High switching Power Supply ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source
7.37. Size:201K inchange semiconductor
ipa60r1k0ce.pdf
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA60R1K0CE FEATURES With TO-220F package Low input capacitance and gate charge Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAME
7.38. Size:201K inchange semiconductor
ipa60r120c7.pdf
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA60R120C7 FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATING
7.39. Size:201K inchange semiconductor
ipa60r165cp.pdf
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA60R165CP FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATING
7.40. Size:203K inchange semiconductor
ipa60r190c6.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPA60R190C6 FEATURES With TO-220F packaging High speed switching Very high commutation ruggedness Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operationz APPLICATIONS PFC stages, hard switching PWM stages and resonant switching PC Silverbox, Adapte
7.42. Size:245K inchange semiconductor
ipa60r125p6.pdf
isc N-Channel MOSFET Transistor IPA60R125P6,IIPA60R125P6 FEATURES Drain-source on-resistance RDS(on) 0.125 (max) Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION It is intended for general purpose switching applications ABSOLUTE MAXIMUM RATINGS(T =25 )
7.43. Size:223K inchange semiconductor
ipa60r180c7.pdf
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA60R180C7 FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATING
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