IRF7473TRPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF7473TRPBFFEATURESWith SOP-8 packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMB

IRF7473TRwww.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.040 at VGS = 10 V 6.4 Extremely Low Qgd for Switching Losses100 23 nC0.047 at VGS = 8 V 5.5 100 % Rg Tested 100 % Avalanche Tested Compliant to RoHS Directive 2002/95/ECDAPPLICATIONSSO

PD- 95559IRF7473PbFHEXFET Power MOSFETApplicationsl Telecom and Data-Com 24 and 48VVDSS RDS(on) max IDinput DC-DC convertersl Motor Control100V 26mW@VGS = 10V 6.9Al Uninterrutible Power Supplyl Lead-FreeBenefitsl Ultra Low On-ResistanceAA1 8l High Speed Switching S Dl Low Gate Drive Current Due to Improved 2 7S DGate Charge Characteristic3 6S Dl Imp

PD- 94037AIRF7473HEXFET Power MOSFETApplicationsVDSS RDS(on) max ID Telecom and Data-Com 24 and 48Vinput DC-DC converters100V 26m@VGS = 10V 6.9A Motor Control Uninterrutible Power SupplyBenefits Ultra Low On-ResistanceAA High Speed Switching 1 8S D Low Gate Drive Current Due to Improved2 7S DGate Charge Characteristic3 6S D Im

IRF7473PbF-1HEXFET Power MOSFETAVDS 100 VA1 8S DRDS(on) max 26 m2 7(@V = 10V) S DGSQg (typical) 61 nC3 6S DID 4 56.9 AG D(@T = 25C)ASO-8Top ViewFeatures BenefitsIndustry-standard pinout SO-8 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier ManufacturingRoHS Compliant, Halogen-Free Environmen