IRF7473TRPBF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRF7473TRPBF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.5 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 6.9 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 20 nS
Cossⓘ - Capacitancia de salida: 230 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.026 Ohm
Encapsulados: SO8
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IRF7473TRPBF datasheet
irf7473trpbf.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF7473TRPBF FEATURES With SOP-8 packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB
irf7473tr.pdf
IRF7473TR www.VBsemi.tw N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.040 at VGS = 10 V 6.4 Extremely Low Qgd for Switching Losses 100 23 nC 0.047 at VGS = 8 V 5.5 100 % Rg Tested 100 % Avalanche Tested Compliant to RoHS Directive 2002/95/EC D APPLICATIONS SO
irf7473pbf.pdf
PD- 95559 IRF7473PbF HEXFET Power MOSFET Applications l Telecom and Data-Com 24 and 48V VDSS RDS(on) max ID input DC-DC converters l Motor Control 100V 26mW@VGS = 10V 6.9A l Uninterrutible Power Supply l Lead-Free Benefits l Ultra Low On-Resistance A A 1 8 l High Speed Switching S D l Low Gate Drive Current Due to Improved 2 7 S D Gate Charge Characteristic 3 6 S D l Imp
irf7473.pdf
PD- 94037A IRF7473 HEXFET Power MOSFET Applications VDSS RDS(on) max ID Telecom and Data-Com 24 and 48V input DC-DC converters 100V 26m @VGS = 10V 6.9A Motor Control Uninterrutible Power Supply Benefits Ultra Low On-Resistance A A High Speed Switching 1 8 S D Low Gate Drive Current Due to Improved 2 7 S D Gate Charge Characteristic 3 6 S D Im
Otros transistores... IPB073N15N5 , IPB090N06N3 , IPB156N22NFD , IPB60R280P6 , IPD30N03S2L , IPP60R060P7 , IPP60R070CFD7 , IRF3205STRLPBF , AO4407A , IRFI3306G , IRFI4228 , IRFI7440G , IRFI7446G , IRFI7536G , IRFIP054 , 2N7636-GA , 2N7637-GA .
History: JCS10N70F | 68P40
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