IXTP24N65X2M MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IXTP24N65X2M
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 37 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua
de drenaje: 8.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 25 nS
Cossⓘ - Capacitancia de salida: 1470 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.145 Ohm
Encapsulados: TO220F
Búsqueda de reemplazo de IXTP24N65X2M MOSFET
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IXTP24N65X2M datasheet
..1. Size:118K ixys
ixtp24n65x2m.pdf 
Advance Technical Information X2-Class VDSS = 650V IXTP24N65X2M Power MOSFET ID25 = 8.5A RDS(on) 145m (Electrically Isolated Tab) N-Channel Enhancement Mode OVERMOLDED TO-220 Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 650 V VDGR TJ = 25 C to 150 C, RGS = 1M 650 V G D S VGSS Continuous 30 V VGSM Transient
8.1. Size:173K ixys
ixta240n055t ixtp240n055t.pdf
Preliminary Technical Information IXTA240N055T VDSS = 55 V TrenchMVTM IXTP240N055T ID25 = 240 A Power MOSFET RDS(on) 3.6 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25 C to 175 C55 V VDGR TJ = 25 C to 175 C; RGS = 1 M 55 V G VGSM Transient 20 V S (TAB) ID25 TC = 25 C 2
9.2. Size:214K ixys
ixta220n055t ixtp220n055t.pdf
Preliminary Technical Information IXTA220N055T VDSS = 55 V TrenchMVTM IXTP220N055T ID25 = 220 A Power MOSFET RDS(on) 4.0 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25 C to 175 C55 V VDGR TJ = 25 C to 175 C; RGS = 1 M 55 V G VGSM Transient 20 V S (TAB) ID25 T
9.3. Size:175K ixys
ixta220n075t ixtp220n075t.pdf
Preliminary Technical Information IXTA220N075T VDSS = 75 V TrenchMVTM IXTP220N075T ID25 = 220 A Power MOSFET RDS(on) 4.5 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25 C to 175 C75 V VDGR TJ = 25 C to 175 C; RGS = 1 M 75 V G VGSM Transient 20 V S (TAB) ID25 TC = 25 C 2
9.4. Size:127K ixys
ixtp20n65xm.pdf
Preliminary Technical Information X-Class VDSS = 650V IXTP20N65XM Power MOSFET ID25 = 9A RDS(on) 210m N-Channel Enhancement Mode OVERMOLDED Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 650 V G D S VDGR TJ = 25 C to 150 C, RGS = 1M 650 V VGSS Continuous 30 V G = Gate D = Drain VGSM Transient 40 V S = So
9.5. Size:90K ixys
ixtp2r4n50p ixty2r4n50p.pdf
IXTP 2R4N50P VDSS = 500 V PolarHVTM IXTY 2R4N50P ID25 = 2.4 A Power MOSFET RDS(on) 3.75 N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-220 (IXTP) VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 M 500 V VGSM Transient 40 V (TAB) G VGSM Continuous 30 V D S ID25 TC = 25 C 2.4 A
9.6. Size:231K ixys
ixta20n65x ixth20n65x ixtp20n65x.pdf
Preliminary Technical Information X-Class VDSS = 650V IXTA20N65X Power MOSFET ID25 = 20A IXTP20N65X RDS(on) 210m IXTH20N65X N-Channel Enhancement Mode TO-263 (IXTA) G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220 (IXTP) VDSS TJ = 25 C to 150 C 650 V VDGR TJ = 25 C to 150 C, RGS = 1M 650 V VGSS Continuous 30 V VG
9.7. Size:216K ixys
ixtp230n04t4m.pdf
Preliminary Technical Information VDSS = 40V TrenchT4TM IXTP230N04T4M ID25 = 230A Power MOSFET RDS(on) 2.9m (Electrically Isolated Tab) N-Channel Enhancement Mode OVERMOLDED TO-220 Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 175 C40 V G Isolated Tab D S VDGR TJ = 25 C to 175 C, RGS = 1M 40 V VG
9.8. Size:248K ixys
ixta260n055t2 ixtp260n055t2.pdf
TrenchT2TM IXTA260N055T2 VDSS = 55V IXTP260N055T2 ID25 = 260A Power MOSFET RDS(on) 3.3m N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions Maximum Ratings G VDSS TJ = 25 C to 175 C 55 V S (TAB) VDGR TJ = 25 C to 175 C, RGS = 1M 55 V VGSM Transient 20 V TO-220 (IXTP) ID25 TC = 25 C 260 A ILRM
9.9. Size:113K ixys
ixta2n80 ixtp2n80.pdf
VDSS = 800 V High Voltage MOSFET IXTA 2N80 ID25 = 2 A IXTP 2N80 RDS(on) = 6.2 N-Channel Enhancement Mode Avalanche Energy Rated Preliminary Data Symbol Test Conditions Maximum Ratings TO-220AB (IXTP) VDSS TJ = 25 C to 150 C 800 V VDGR TJ = 25 C to 150 C; RGS = 1 M 800 V VGS Continuous 20 V D (TAB) G VGSM Transient 30 V D S ID25 TC = 25 C2 A
9.10. Size:215K ixys
ixta200n085t ixtp200n085t.pdf
Preliminary Technical Information IXTA 200N085T VDSS = 85 V TrenchMVTM IXTP 200N085T ID25 = 200 A Power MOSFET RDS(on) 5.0 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25 C to 175 C85 V VDGR TJ = 25 C to 175 C; RGS = 1 M 85 V G VGSM Transient 20 V S (TAB) ID25
9.11. Size:76K ixys
ixta2n100 ixtp2n100.pdf
High Voltage VDSS = 1000 V IXTA 2N100 MOSFET ID25 = 2 A IXTP 2N100 RDS(on) = 7 N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings TO-220AB (IXTP) VDSS TJ = 25 C to 150 C 1000 V VDGR TJ = 25 C to 150 C; RGS = 1 M 1000 V VGS Continuous 20 V D (TAB) G VGSM Transient 30 V D S ID25 TC = 25 C2 A IDM TC = 25 C, pulse width limited by
9.12. Size:163K ixys
ixta270n04t4 ixth270n04t4 ixtp270n04t4.pdf
Advance Technical Information VDSS = 40V TrenchT4TM IXTA270N04T4 ID25 = 270A Power MOSFET IXTP270N04T4 RDS(on) 2.4m IXTH270N04T4 N-Channel Enhancement Mode TO-263 AA (IXTA) Avalanche Rated G S D (Tab) TO-220AB (IXTP) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 175 C40 V G D D (Tab) S VDGR TJ = 25 C to 175 C, RG
9.14. Size:310K ixys
ixta230n075t2 ixtp230n075t2.pdf
TrenchT2TM VDSS = 75V IXTA230N075T2 ID25 = 230A Power MOSFET IXTP230N075T2 RDS(on) 4.2m N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G S D (Tab) TO-220 (IXTP) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 175 C75 V VDGR TJ = 25 C to 175 C, RGS = 1M 75 V VGSM Transient 20 V G D S ID25 TC = 25 C 2
9.15. Size:183K ixys
ixtp2n65x2 ixty2n65x2.pdf
Preliminary Technical Information X2-Class VDSS = 650V IXTY2N65X2 Power MOSFET ID25 = 2A IXTP2N65X2 RDS(on) 2.3 N-Channel Enhancement Mode TO-252 (IXTY) G S Symbol Test Conditions Maximum Ratings D (Tab) VDSS TJ = 25 C to 150 C 650 V VDGR TJ = 25 C to 150 C, RGS = 1M 650 V TO-220 (IXTP) VGSS Continuous 30 V VGSM Transient
9.16. Size:215K ixys
ixta200n075t ixtp200n075t.pdf
Preliminary Technical Information IXTA200N075T VDSS = 75 V TrenchMVTM IXTP200N075T ID25 = 200 A Power MOSFET RDS(on) 5.0 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25 C to 175 C75 V VDGR TJ = 25 C to 175 C; RGS = 1 M 75 V G VGSM Transient 20 V S (TAB) ID25
9.17. Size:240K inchange semiconductor
ixtp26p10t.pdf
isc P-Channel MOSFET Transistor IXTP26P10T FEATURES Static drain-source on-resistance RDS(on) 90m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION High side switching Push pull amplifiers Current regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT
9.18. Size:255K inchange semiconductor
ixtp230n04t4.pdf
isc N-Channel MOSFET Transistor IXTP230N04T4 FEATURES With TO-220F packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBO
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