MDP10N055 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: MDP10N055
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 188 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 120 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 14 nS
   Cossⓘ - Capacitancia de salida: 1108 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0055 Ohm
   Paquete / Cubierta: TO220

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MDP10N055 Datasheet (PDF)

..1. Size:1025K magnachip
mdp10n055.pdf

MDP10N055 Single N-channel Trench MOSFET 100V, 120A, 5.5m General Description Features The MDP10N055 uses advanced MagnaChips MOSFET Technology, V = 100V DSwhich provides high performance in on-state resistance, fast I = 120A @V = 10V D GSswitching performance, and excellent quality. Very low on-resistance R DS(ON)

..2. Size:206K inchange semiconductor
mdp10n055.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor MDP10N055FEATURESWith TO-220 packagingHigh speed switchingVery high commutation ruggednessEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSPFC stagesLCD & PDP TVPower supplySwitching applicationsABSOLUTE MAXIMU

0.1. Size:954K magnachip
mdp10n055th.pdf

MDP10N055TH Single N-channel Trench MOSFET 100V, 120A, 5.5m General Description Features The MDP10N055TH uses advanced Magnachips MOSFET V = 100V DSTechnology, which provides high performance in on-state resistance, I = 120A @V = 10V D GSfast switching performance, and excellent quality. Very low on-resistance R DS(ON)

0.2. Size:288K inchange semiconductor
mdp10n055th.pdf

isc N-Channel MOSFET Transistor MDP10N055THFEATURESDrain Current : I = 130A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 5.5m(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand so

7.1. Size:1067K 1
mdp10n027th.pdf

MDP10N027TH Single N-channel Trench MOSFET 100V, 120A, 2.8m General Description Features The MDP10N027TH uses advanced Magnachips MOSFET V = 100V DSTechnology, which provides high performance in on-state resistance, I = 120A @V = 10V D GSfast switching performance, and excellent quality. Very low on-resistance R DS(ON)

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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