NTGS3441T1 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NTGS3441T1
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.5 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
|Id|ⓘ - Corriente continua de drenaje: 1.65 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 23.5 nS
Cossⓘ - Capacitancia de salida: 265 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.09 Ohm
Paquete / Cubierta: TSOP-6
Búsqueda de reemplazo de NTGS3441T1 MOSFET
NTGS3441T1 Datasheet (PDF)
ntgs3441t1 nvgs3441.pdf

NTGS3441, NVGS3441Power MOSFET1 Amp, 20 Volts, P-Channel TSOP-6Features Ultra Low RDS(on)http://onsemi.com Higher Efficiency Extending Battery Life Miniature TSOP-6 Surface Mount Package1 AMPERE NV Prefix for Automotive and Other Applications Requiring Unique20 VOLTSSite and Control Change Requirements; AEC-Q101 Qualified andRDS(on) = 90 mWPPAP Capable
ntgs3441bt1g.pdf

NTGS3441BPower MOSFET-20 V, -3.5 A, Single P-Channel, TSOP-6Features Low RDS(on) in TSOP-6 Package 2.5 V Gate Ratinghttp://onsemi.com This is a Pb-Free DeviceApplicationsV(BR)DSS RDS(on) MAX ID MAX Battery Switch and Load Management Applications in Portable90 mW @ -4.5 V -3.0 AEquipment-20 V High Side Load Switch130 mW @ -2.5 V -2.4 A Portable D
ntgs3441p-d ntgs3441pt1g.pdf

NTGS3441PPower MOSFET-20 V, -3.16 A, Single P-Channel TSOP-6Features Ultra Low RDS(on) to Improve Conduction Loss Low Gate Charge to Improve Switching Losseshttp://onsemi.com TSOP-6 Surface Mount Package This is a Pb-Free DeviceV(BR)DSS RDS(ON) TYP ID MAXApplications 91 mW @ 4.5 V High Side Switch in DC-DC Converters-20 V 144 mW @ 2.7 V -3.16 A Batter
ntgs3443bt1g.pdf

NTGS3443BPower MOSFET-20 V, -4.2 A, Single P-Channel, TSOP-6Features Low RDS(on) in TSOP-6 Package 2.5 V Gate Ratinghttp://onsemi.com Fast Switching This is a Pb-Free DeviceV(BR)DSS RDS(ON) MAX ID MAXApplications60 mW @ -4.5 V -3.7 A Optimized for Battery and Load Management Applications in-20 V 90 mW @ -2.7 V -3.1 APortable Equipment100 mW @ -2.5 V
Otros transistores... NTGD4161PT1G , NTGD4169FT1G , NTGS1135PT1G , NTGS3130NT1G , NTGS3136PT1G , NTGS3433T1G , NTGS3441BT1G , NTGS3441PT1G , 20N50 , NTGS3443BT1G , NTGS3443T1 , NTGS3446T1 , NTGS3447PT1G , NTGS3455T1 , NTGS4111PT1 , NTGS4141NT1G , NTGS5120PT1G .
History: STB14NK50Z-1 | AP2311GN | SE1003 | SWI4N65DB | IRFH7545PBF | IRF9640PBF | PSMN005-25D
History: STB14NK50Z-1 | AP2311GN | SE1003 | SWI4N65DB | IRFH7545PBF | IRF9640PBF | PSMN005-25D



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