NTGS3446T1 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NTGS3446T1
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.5 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 2.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 12 nS
Cossⓘ - Capacitancia de salida: 200 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.045 Ohm
Paquete / Cubierta: TSOP-6
- Selección de transistores por parámetros
NTGS3446T1 Datasheet (PDF)
ntgs3446 ntgs3446t1.pdf

NTGS3446Power MOSFET20 V, 5.1 A SingleN-Channel, TSOP6Features Ultra Low RDS(on)http://onsemi.com Higher Efficiency Extending Battery Life Logic Level Gate DriveV(BR)DSS RDS(on) TYP ID MAX Diode Exhibits High Speed, Soft Recovery Avalanche Energy Specified20 V 36 mW @ 4.5 V 5.1 A IDSS Specified at Elevated Temperature Pb-Free Package is Available
ntgs3443bt1g.pdf

NTGS3443BPower MOSFET-20 V, -4.2 A, Single P-Channel, TSOP-6Features Low RDS(on) in TSOP-6 Package 2.5 V Gate Ratinghttp://onsemi.com Fast Switching This is a Pb-Free DeviceV(BR)DSS RDS(ON) MAX ID MAXApplications60 mW @ -4.5 V -3.7 A Optimized for Battery and Load Management Applications in-20 V 90 mW @ -2.7 V -3.1 APortable Equipment100 mW @ -2.5 V
ntgs3447pt1g.pdf

NTGS3447PPower MOSFET-12 V, -5.3 A, Single P-Channel, TSOP-6Features Low RDS(on) in TSOP-6 Package 1.8 V Gate Ratinghttp://onsemi.com This is a Pb-Free DeviceV(BR)DSS RDS(on) MAX ID MAXApplications Battery Switch and Load Management Applications in Portable40 mW @ -4.5 V -4.7 AEquipment-12 V 53 mW @ -2.5 V -4.1 A High Side Load Switch PA Switch 72
ntgs3441t1 nvgs3441.pdf

NTGS3441, NVGS3441Power MOSFET1 Amp, 20 Volts, P-Channel TSOP-6Features Ultra Low RDS(on)http://onsemi.com Higher Efficiency Extending Battery Life Miniature TSOP-6 Surface Mount Package1 AMPERE NV Prefix for Automotive and Other Applications Requiring Unique20 VOLTSSite and Control Change Requirements; AEC-Q101 Qualified andRDS(on) = 90 mWPPAP Capable
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: KD2310 | IRF624A | SISA18ADN | IXFN64N60P | IXFT14N80P | DMC2041UFDB | SMP40N10
History: KD2310 | IRF624A | SISA18ADN | IXFN64N60P | IXFT14N80P | DMC2041UFDB | SMP40N10



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