NTGS3446T1 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NTGS3446T1 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.5 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 2.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 12 nS
Cossⓘ - Capacitancia de salida: 200 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.045 Ohm
Encapsulados: TSOP-6
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NTGS3446T1 datasheet
ntgs3446 ntgs3446t1.pdf
NTGS3446 Power MOSFET 20 V, 5.1 A Single N-Channel, TSOP6 Features Ultra Low RDS(on) http //onsemi.com Higher Efficiency Extending Battery Life Logic Level Gate Drive V(BR)DSS RDS(on) TYP ID MAX Diode Exhibits High Speed, Soft Recovery Avalanche Energy Specified 20 V 36 mW @ 4.5 V 5.1 A IDSS Specified at Elevated Temperature Pb-Free Package is Available
ntgs3443bt1g.pdf
NTGS3443B Power MOSFET -20 V, -4.2 A, Single P-Channel, TSOP-6 Features Low RDS(on) in TSOP-6 Package 2.5 V Gate Rating http //onsemi.com Fast Switching This is a Pb-Free Device V(BR)DSS RDS(ON) MAX ID MAX Applications 60 mW @ -4.5 V -3.7 A Optimized for Battery and Load Management Applications in -20 V 90 mW @ -2.7 V -3.1 A Portable Equipment 100 mW @ -2.5 V
ntgs3447pt1g.pdf
NTGS3447P Power MOSFET -12 V, -5.3 A, Single P-Channel, TSOP-6 Features Low RDS(on) in TSOP-6 Package 1.8 V Gate Rating http //onsemi.com This is a Pb-Free Device V(BR)DSS RDS(on) MAX ID MAX Applications Battery Switch and Load Management Applications in Portable 40 mW @ -4.5 V -4.7 A Equipment -12 V 53 mW @ -2.5 V -4.1 A High Side Load Switch PA Switch 72
ntgs3441t1 nvgs3441.pdf
NTGS3441, NVGS3441 Power MOSFET 1 Amp, 20 Volts, P-Channel TSOP-6 Features Ultra Low RDS(on) http //onsemi.com Higher Efficiency Extending Battery Life Miniature TSOP-6 Surface Mount Package 1 AMPERE NV Prefix for Automotive and Other Applications Requiring Unique 20 VOLTS Site and Control Change Requirements; AEC-Q101 Qualified and RDS(on) = 90 mW PPAP Capable
Otros transistores... NTGS3130NT1G, NTGS3136PT1G, NTGS3433T1G, NTGS3441BT1G, NTGS3441PT1G, NTGS3441T1, NTGS3443BT1G, NTGS3443T1, AO4407, NTGS3447PT1G, NTGS3455T1, NTGS4111PT1, NTGS4141NT1G, NTGS5120PT1G, NTHD2110TT1G, NTHD3101FT1G, NTHD3101FT3
History: AFN4440W
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