NTHS4501NT1G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: NTHS4501NT1G
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.3 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 4.9 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 11 nS
   Cossⓘ - Capacitancia de salida: 137 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.038 Ohm
   Paquete / Cubierta: CHIPFET

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NTHS4501NT1G Datasheet (PDF)

..1. Size:60K onsemi
nths4501n-d nths4501nt1 nths4501nt1g.pdf

NTHS4501NPower MOSFET30 V, 6.7 A, Single N-Channel, ChipFETt PackageFeatureshttp://onsemi.com Planar Technology Device Offers Low RDS(on) and Fast Switching Speedin a ChipFET Package Leadless ChipFET Package has 40% Smaller Footprint than TSOP-6.V(BR)DSS RDS(on) Typ ID MaxIdeal Device for Applications Where Board Space is at a Premium.30 mW @ 10 V ChipFET Packag

9.1. Size:193K onsemi
nths4111pt1g.pdf

NTHS4111PPower MOSFET-30 V, -6.1 A, Single P-Channel, ChipFETtFeatures Offers an Ultra Low RDS(on) Solution in the ChipFET Packagehttp://onsemi.com ChipFET Package 40% Smaller Footprint than TSOP-6 Low Profile (

9.2. Size:84K onsemi
nths4166n nths4166nt1g.pdf

NTHS4166NPower MOSFET30 V, 8.2 A, Single N-Channel, ChipFETt PackageFeatureshttp://onsemi.com Trench Technology Low RDS(on) to Minimize Conduction Losses Leadless ChipFET Package has 40% Smaller Footprint than TSOP-6V(BR)DSS RDS(on) Max ID Max Excellent Thermal Capabilities22 mW @ 10 V This is a Pb-Free Device30 V 8.2 A27 mW @ 4.5 VApplications

9.3. Size:59K onsemi
nths4101p-d.pdf

NTHS4101PPower MOSFET-20 V, 6.7 A, P-Channel ChipFETtFeatures Offers an Ultra Low RDS(on) Solution in the ChipFET Package Miniature ChipFET Package 40% Smaller Footprint than TSOP-6http://onsemi.commaking it an Ideal Device for Applications where Board Space is at aPremiumV(BR)DSS RDS(on) TYP ID MAX Low Profile (

9.4. Size:118K onsemi
nths4101p.pdf

NTHS4101PMOSFET Power,P-Channel, ChipFET-20 V, 6.7 AFeatures Offers an Ultra Low RDS(on) Solution in the ChipFET Packagehttp://onsemi.com Miniature ChipFET Package 40% Smaller Footprint than TSOP-6making it an Ideal Device for Applications where Board Space is at a V(BR)DSS RDS(on) TYP ID MAXPremium21 mW @ -4.5 V Low Profile (

9.5. Size:122K onsemi
nths4101pt1g.pdf

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