NTJD4158CT1G Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NTJD4158CT1G  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.27 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 0.88 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 66 nS

Cossⓘ - Capacitancia de salida: 19 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.5 Ohm

Encapsulados: SOT-363

  📄📄 Copiar 

 Búsqueda de reemplazo de NTJD4158CT1G MOSFET

- Selecciónⓘ de transistores por parámetros

 

NTJD4158CT1G datasheet

 5.1. Size:142K  onsemi
 ntjd4158c.pdf pdf_icon

NTJD4158CT1G

NTJD4158C Small Signal MOSFET 30 V/-20 V, +0.25/-0.88 A, Complementary, SC-88 Features http //onsemi.com Leading 20 V Trench for Low RDS(on) Performance ESD Protected Gate V(BR)DSS RDS(on) Typ ID Max SC-88 Package for Small Footprint (2 x 2 mm) 1.0 W @ 4.5 V N-Ch This is a Pb-Free Device 0.25 A 30 V 1.5 W @ 2.5 V Applications 215 mW @ -4.5 V P-Ch -0.88 A -20 V

 5.2. Size:142K  onsemi
 ntjd4158c nvjd4158c.pdf pdf_icon

NTJD4158CT1G

NTJD4158C, NVJD4158C MOSFET Small Signal, Complementary, SC-88 30 V/-20 V, +0.25/-0.88 A Features www.onsemi.com Leading 20 V Trench for Low RDS(on) Performance ESD Protected Gate V(BR)DSS RDS(on) Typ ID Max SC-88 Package for Small Footprint (2 x 2 mm) 1.0 W @ 4.5 V NV Prefix for Automotive and Other Applications Requiring Unique N-Ch 0.25 A 30 V Site and Cont

 7.1. Size:126K  onsemi
 ntjd4152p nvjd4152p.pdf pdf_icon

NTJD4158CT1G

NTJD4152P, NVJD4152P MOSFET Dual, P-Channel, Trench Small Signal, ESD Protected, SC-88 20 V, 0.88 A Features www.onsemi.com Leading Trench Technology for Low RDS(ON) Performance Small Footprint Package (SC70-6 Equivalent) V(BR)DSS RDS(on) Typ ID Max ESD Protected Gate 215 mW @ -4.5 V NV Prefix for Automotive and Other Applications Requiring Unique -20 V Site an

 7.2. Size:88K  onsemi
 ntjd4152p.pdf pdf_icon

NTJD4158CT1G

NTJD4152P Trench Small Signal MOSFET 20 V, 0.88 A, Dual P-Channel, ESD Protected SC-88 http //onsemi.com Features Leading Trench Technology for Low RDS(ON) Performance V(BR)DSS RDS(on) Typ ID Max Small Footprint Package (SC70-6 Equivalent) 215 mW @ -4.5 V ESD Protected Gate Pb-Free Package is Available -20 V 345 mW @ -2.5 V -0.88 A Applications 600 mW @ -1.8 V

MOSTRAR MÁS

Otros transistores... NTHS5402T1, NTHS5404T1G, NTHS5441PT1G, NTHS5441T1G, NTHS5443T1, NTHS5445T1, NTJD4105CT1G, NTJD4152PT1G, IRLB3034, NTJS3151PT1G, NTJS3151PT2, NTJS3157NT1G, NTJS3157NT2, NTJS3157NT4, NTJS4151PT1, NTJS4151PT1G, NTJS4160NT1G