NTJD4158CT1G Todos los transistores

 

NTJD4158CT1G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NTJD4158CT1G
   Tipo de FET: MOSFET
   Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.27 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 0.88 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 66 nS
   Cossⓘ - Capacitancia de salida: 19 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.5 Ohm
   Paquete / Cubierta: SOT-363
 

 Búsqueda de reemplazo de NTJD4158CT1G MOSFET

   - Selección ⓘ de transistores por parámetros

 

NTJD4158CT1G Datasheet (PDF)

 5.1. Size:142K  onsemi
 ntjd4158c.pdf pdf_icon

NTJD4158CT1G

NTJD4158CSmall Signal MOSFET30 V/-20 V, +0.25/-0.88 A,Complementary, SC-88Featureshttp://onsemi.com Leading 20 V Trench for Low RDS(on) Performance ESD Protected GateV(BR)DSS RDS(on) Typ ID Max SC-88 Package for Small Footprint (2 x 2 mm)1.0 W @ 4.5 VN-Ch This is a Pb-Free Device 0.25 A30 V1.5 W @ 2.5 VApplications215 mW @ -4.5 VP-Ch-0.88 A-20 V

 5.2. Size:142K  onsemi
 ntjd4158c nvjd4158c.pdf pdf_icon

NTJD4158CT1G

NTJD4158C, NVJD4158CMOSFET Small Signal,Complementary, SC-8830 V/-20 V, +0.25/-0.88 AFeatureswww.onsemi.com Leading 20 V Trench for Low RDS(on) Performance ESD Protected GateV(BR)DSS RDS(on) Typ ID Max SC-88 Package for Small Footprint (2 x 2 mm)1.0 W @ 4.5 V NV Prefix for Automotive and Other Applications Requiring UniqueN-Ch0.25 A30 VSite and Cont

 7.1. Size:126K  onsemi
 ntjd4152p nvjd4152p.pdf pdf_icon

NTJD4158CT1G

NTJD4152P, NVJD4152PMOSFET Dual, P-Channel,Trench Small Signal, ESDProtected, SC-8820 V, 0.88 AFeatureswww.onsemi.com Leading Trench Technology for Low RDS(ON) Performance Small Footprint Package (SC70-6 Equivalent)V(BR)DSS RDS(on) Typ ID Max ESD Protected Gate215 mW @ -4.5 V NV Prefix for Automotive and Other Applications Requiring Unique-20 VSite an

 7.2. Size:88K  onsemi
 ntjd4152p.pdf pdf_icon

NTJD4158CT1G

NTJD4152PTrench Small SignalMOSFET20 V, 0.88 A, Dual P-Channel, ESD Protected SC-88http://onsemi.comFeatures Leading Trench Technology for Low RDS(ON) PerformanceV(BR)DSS RDS(on) Typ ID Max Small Footprint Package (SC70-6 Equivalent)215 mW @ -4.5 V ESD Protected Gate Pb-Free Package is Available-20 V345 mW @ -2.5 V -0.88 AApplications600 mW @ -1.8 V

MOSTRAR MÁS

Otros transistores... NTHS5402T1 , NTHS5404T1G , NTHS5441PT1G , NTHS5441T1G , NTHS5443T1 , NTHS5445T1 , NTJD4105CT1G , NTJD4152PT1G , 60N06 , NTJS3151PT1G , NTJS3151PT2 , NTJS3157NT1G , NTJS3157NT2 , NTJS3157NT4 , NTJS4151PT1 , NTJS4151PT1G , NTJS4160NT1G .

History: SST202 | UT8205AL-S08-R | NCE85H21TC | AO4932 | STD5NK50Z

 

 
Back to Top

 


 
.