NTK3043NAT5G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NTK3043NAT5G
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.31 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 10 V
|Id|ⓘ - Corriente continua de drenaje: 0.21 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 15 nS
Cossⓘ - Capacitancia de salida: 8.3 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 3.4 Ohm
Paquete / Cubierta: SOT-723
- Selección de transistores por parámetros
NTK3043NAT5G Datasheet (PDF)
ntk3043n-d ntk3043nat5g ntk3043nt1g.pdf

NTK3043NPower MOSFET20 V, 285 mA, N-Channel with ESDProtection, SOT-723Featureshttp://onsemi.com Enables High Density PCB Manufacturing 44% Smaller Footprint than SC-89 and 38% Thinner than SC-89V(BR)DSS RDS(on) TYP ID Max Low Voltage Drive Makes this Device Ideal for Portable Equipment1.5 W @ 4.5 V Low Threshold Levels, VGS(TH)
ntk3043n.pdf

NTK3043NPower MOSFET20 V, 285 mA, N-Channel with ESDProtection, SOT-723Featureshttp://onsemi.com Enables High Density PCB Manufacturing 44% Smaller Footprint than SC-89 and 38% Thinner than SC-89V(BR)DSS RDS(on) TYP ID Max Low Voltage Drive Makes this Device Ideal for Portable Equipment1.5 W @ 4.5 V Low Threshold Levels, VGS(TH)
lntk3043pt5g s-lntk3043pt5g.pdf

LESHAN RADIO COMPANY, LTD.Power MOSFET20 V, 285 mA, P-Channel with ESDProtection, SOT-723LNTK3043PT5GFeaturesS-LNTK3043PT5G Enables High Density PCB Manufacturing 44% Smaller Footprint than SC-89 and 38% Thinner than SC-89V(BR)DSS RDS(on) TYP ID Max Low Voltage Drive Makes this Device Ideal for Portable Equipment1.5 W @ 4.5 V Low Threshold Levels, VGS(TH)
Otros transistores... AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , IRFZ48N , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .
History: IXTP50N28T
History: IXTP50N28T



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