NTK3142PT1G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: NTK3142PT1G
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.28 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 0.215 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 15.3 nS
   Cossⓘ - Capacitancia de salida: 4.3 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 3.4 Ohm
   Paquete / Cubierta: SOT-723

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NTK3142PT1G Datasheet (PDF)

..1. Size:122K onsemi
ntk3142pt1g.pdf

NTK3142PSmall Signal MOSFET-20 V, -280 mA, P-Channel with ESDProtection, SOT-723Features Enables High Density PCB Manufacturinghttp://onsemi.com 44% Smaller Footprint than SC-89 and 38% Thinner than SC-89 Low Voltage Drive Makes this Device Ideal for Portable EquipmentV(BR)DSS RDS(on) TYP ID Max Low Threshold Levels, 1.8 V RDS(on) Rating2.7 W @ -4.5 V-280 mA

6.1. Size:125K onsemi
ntk3142p.pdf

9.1. Size:59K onsemi
ntk3139p-d ntk3139pt1g.pdf

NTK3139PPower MOSFET-20 V, -780 mA, Single P-Channel withESD Protection, SOT-723Featureshttp://onsemi.com P-channel Switch with Low RDS(on) 44% Smaller Footprint and 38% Thinner than SC-89 V(BR)DSS RDS(on) TYP ID Max Low Threshold Levels Allowing 1.5 V RDS(on) Rating 0.38 W @ -4.5 V -780 mA Operated at Low Logic Level Gate Drive0.52 W @ -2.5 V -660 mA-20 V

9.2. Size:61K onsemi
ntk3134n.pdf

NTK3134NPower MOSFET20 V, 890 mA, Single N-Channel withESD Protection, SOT-723Featureswww.onsemi.com N-Channel Switch with Low RDS(on)V(BR)DSS RDS(on) TYP ID Max 44% Smaller Footprint and 38% Thinner than SC890.20 W @ 4.5 V 890 mA Low Threshold Levels Allowing 1.5 V RDS(on) Rating Operated at Low Logic Level Gate Drive 0.26 W @ 2.5 V 790 mA20 V These Dev

9.3. Size:129K onsemi
ntk3139p.pdf

NTK3139PMOSFET Power, Single,P-Channel with ESDProtection, SOT-723-20 V, -780 mAwww.onsemi.comFeaturesV(BR)DSS RDS(on) TYP ID Max P-channel Switch with Low RDS(on)0.38 W @ -4.5 V -780 mA 44% Smaller Footprint and 38% Thinner than SC-890.52 W @ -2.5 V -660 mA Low Threshold Levels Allowing 1.5 V RDS(on) Rating-20 V0.70 W @ -1.8 V -100 mA Operated at

9.4. Size:58K onsemi
ntk3134n-d ntk3134nt1g.pdf

NTK3134NPower MOSFET20 V, 890 mA, Single N-Channel withESD Protection, SOT-723Featureshttp://onsemi.com N channel Switch with Low RDS(on)V(BR)DSS RDS(on) TYP ID Max 44% Smaller Footprint and 38% Thinner than SC890.20 W @ 4.5 V 890 mA Low Threshold Levels Allowing 1.5 V RDS(on) Rating Operated at Low Logic Level Gate Drive 0.26 W @ 2.5 V 790 mA20 V These

9.5. Size:1967K cn tech public
tpntk3139pt1g.pdf