NTK3142PT1G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NTK3142PT1G
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.28 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
|Id|ⓘ - Corriente continua de drenaje: 0.215 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 15.3 nS
Cossⓘ - Capacitancia de salida: 4.3 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 3.4 Ohm
Paquete / Cubierta: SOT-723
Búsqueda de reemplazo de NTK3142PT1G MOSFET
NTK3142PT1G Datasheet (PDF)
ntk3142pt1g.pdf

NTK3142PSmall Signal MOSFET-20 V, -280 mA, P-Channel with ESDProtection, SOT-723Features Enables High Density PCB Manufacturinghttp://onsemi.com 44% Smaller Footprint than SC-89 and 38% Thinner than SC-89 Low Voltage Drive Makes this Device Ideal for Portable EquipmentV(BR)DSS RDS(on) TYP ID Max Low Threshold Levels, 1.8 V RDS(on) Rating2.7 W @ -4.5 V-280 mA
ntk3142p.pdf

NTK3142PSmall Signal MOSFET-20 V, -280 mA, P-Channel with ESDProtection, SOT-723Features Enables High Density PCB Manufacturinghttp://onsemi.com 44% Smaller Footprint than SC-89 and 38% Thinner than SC-89 Low Voltage Drive Makes this Device Ideal for Portable EquipmentV(BR)DSS RDS(on) TYP ID Max Low Threshold Levels, 1.8 V RDS(on) Rating2.7 W @ -4.5 V-280 mA
ntk3139p-d ntk3139pt1g.pdf

NTK3139PPower MOSFET-20 V, -780 mA, Single P-Channel withESD Protection, SOT-723Featureshttp://onsemi.com P-channel Switch with Low RDS(on) 44% Smaller Footprint and 38% Thinner than SC-89 V(BR)DSS RDS(on) TYP ID Max Low Threshold Levels Allowing 1.5 V RDS(on) Rating 0.38 W @ -4.5 V -780 mA Operated at Low Logic Level Gate Drive0.52 W @ -2.5 V -660 mA-20 V
ntk3134n.pdf

NTK3134NPower MOSFET20 V, 890 mA, Single N-Channel withESD Protection, SOT-723Featureswww.onsemi.com N-Channel Switch with Low RDS(on)V(BR)DSS RDS(on) TYP ID Max 44% Smaller Footprint and 38% Thinner than SC890.20 W @ 4.5 V 890 mA Low Threshold Levels Allowing 1.5 V RDS(on) Rating Operated at Low Logic Level Gate Drive 0.26 W @ 2.5 V 790 mA20 V These Dev
Otros transistores... NTJS4151PT1G , NTJS4160NT1G , NTJS4405NT1 , NTJS4405NT4 , NTK3043NAT5G , NTK3043NT1G , NTK3134NT1G , NTK3139PT1G , IRF3205 , NTLGF3402PT1G , NTLGF3501NT2G , NTLJD3119CTAG , NTLJD3119CTBG , NTLJD3182FZTAG , NTLJD3182FZTBG , NTLJF3117PT1G , NTLJF3117PTAG .
History: HY4903B | HRD50N06K | CEP15A03 | STP12NK60Z | SVS7N65SD2TR | IPD220N06L3G | IPD50N04S4-08
History: HY4903B | HRD50N06K | CEP15A03 | STP12NK60Z | SVS7N65SD2TR | IPD220N06L3G | IPD50N04S4-08



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