NTLJS1102PTAG Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NTLJS1102PTAG 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.7 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 8 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 6 V
|Id|ⓘ - Corriente continua de drenaje: 3.7 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 41 nS
Cossⓘ - Capacitancia de salida: 350 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.036 Ohm
Encapsulados: WDFN6
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NTLJS1102PTAG datasheet
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Otros transistores... NTLJD3119CTBG, NTLJD3182FZTAG, NTLJD3182FZTBG, NTLJF3117PT1G, NTLJF3117PTAG, NTLJF3118NTAG, NTLJF4156NT1G, NTLJF4156NTAG, IRFB4110, NTLJS1102PTBG, NTLJS2103PTAG, NTLJS2103PTBG, NTLJS3113PT1G, NTLJS3113PTAG, NTLJS3180PZTBG, NTLJS3A18PZ, NTLJS4114NT1G
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