NTLJS1102PTBG Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NTLJS1102PTBG  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.7 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 8 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 6 V

|Id|ⓘ - Corriente continua de drenaje: 3.7 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 41 nS

Cossⓘ - Capacitancia de salida: 350 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.036 Ohm

Encapsulados: WDFN6

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NTLJS1102PTBG datasheet

 ..1. Size:119K  onsemi
ntljs1102p ntljs1102ptag ntljs1102ptbg.pdf pdf_icon

NTLJS1102PTBG

NTLJS1102P Power MOSFET -8 V, -8.1 A, mCOOL] Single P-Channel, 2x2 mm, WDFN package Features WDFN Package with Exposed Drain Pad for Excellent Thermal http //onsemi.com Conduction Lowest RDS(on) in 2 x 2 mm Package V(BR)DSS RDS(on) MAX ID MAX 1.2 V RDS(on) Rating for Operation at Low Voltage Logic Level Gate 36 mW @ -4.5 V -6.2 A Drive 2 x 2 mm Footprint Same as SC-

 8.1. Size:325K  onsemi
ntljs17d0p03p8z.pdf pdf_icon

NTLJS1102PTBG

MOSFET - Power, Single P-Channel, WDFN6 -30 V Product Preview NTLJS17D0P03P8Z www.onsemi.com Features Small Footprint (4 mm2) for Compact Design Low RDS(on) to Minimize Conduction Losses V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free, Halogen-Free/BFR-Free and are RoHS Compliant 11.3 mW @ -10 V -30 V -11.7 A 21.3 mW @ -4.5 V Applications Battery Management

 9.1. Size:84K  onsemi
ntljs4114n.pdf pdf_icon

NTLJS1102PTBG

NTLJS4114N Power MOSFET 30 V, 7.8 A, mCoolt Single N-Channel, 2x2 mm WDFN Package Features WDFN Package Provides Exposed Drain Pad for Excellent Thermal http //onsemi.com Conduction 2x2 mm Footprint Same as SC-88 V(BR)DSS RDS(on) MAX ID MAX (Note 1) Lowest RDS(on) in 2x2 mm Package 35 mW @ 4.5 V 1.8 V RDS(on) Rating for Operation at Low Voltage Logic Level Gate 30 V

 9.2. Size:117K  onsemi
ntljs3180pz ntljs3180pztbg.pdf pdf_icon

NTLJS1102PTBG

NTLJS3180PZ Power MOSFET -20 V, -7.7 A, mCoolt Single P-Channel, ESD, 2x2 mm WDFN Package Features WDFN 2x2 mm Package with Exposed Drain Pads for Excellent http //onsemi.com Thermal Conduction Lowest RDS(on) Solution in 2x2 mm Package V(BR)DSS RDS(on) MAX ID MAX Footprint Same as SC-88 Package 38 mW @ -4.5 V Low Profile (

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