NTLUS4C16N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: NTLUS4C16N
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.65 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 6.1 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 14.5 nS
   Cossⓘ - Capacitancia de salida: 305 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0114 Ohm
   Paquete / Cubierta: UDFN6

Búsqueda de reemplazo de MOSFET NTLUS4C16N

NTLUS4C16N Datasheet (PDF)

..1. Size:123K onsemi
ntlus4c16n.pdf

NTLUS4C16NProduct PreviewPower MOSFET30 V, 11.7 A, Single N-Channel,1.6x1.6x0.55 mm mCoolt UDFN6 PackageFeatures www.onsemi.com UDFN Package with Exposed Drain Pads for Excellent ThermalMOSFETConductionV(BR)DSS RDS(on) MAX ID MAX Low Profile UDFN 1.6 x 1.6 x 0.55 mm for Board Space Saving11.4 mW @ 10 V Ultra Low RDS(on)13.3 mW @ 4.5 V These Devices are Pb

6.1. Size:79K onsemi
ntlus4c12n.pdf

NTLUS4C12NPower MOSFET30 V, 10.7 A, Single N-Channel,2.0x2.0x0.55 mm mCoolt UDFN6 PackageFeatures Low Profile UDFN 2.0 x 2.0 x 0.55 mm for Board Space Saving withwww.onsemi.comExposed Drain Pads for Excellent Thermal Conduction Ultra Low RDS(on) to Reduce Conduction LossesMOSFET Optimized Gate Charge to Reduce Switching LossesV(BR)DSS RDS(on) MAX ID MAX Low C

8.1. Size:115K onsemi
ntlus4930n.pdf

NTLUS4930NPower MOSFET30 V, 6.1 A, Single N-Channel,2.0x2.0x0.55 mm mCoolt UDFN6 PackageFeatures UDFN Package with Exposed Drain Pads for Excellent Thermalhttp://onsemi.comConduction Low Profile UDFN 2.0 x 2.0 x 0.55 mm for Board Space Saving MOSFET Low RDS(on) to Minimize Conduction LossesV(BR)DSS RDS(on) MAX ID MAX Low Capacitance to Minimize Driver Losses3

9.1. Size:127K onsemi
ntlus3a39pztbg ntlus3a39pz ntlus3a39pztag.pdf

NTLUS3A39PZPower MOSFET-20 V, -5.2 A, Single P-Channel, ESD,1.6x1.6x0.55 mm UDFN mCoolt PackageFeatures UDFN Package with Exposed Drain Pads for Excellent Thermalhttp://onsemi.comConduction Low Profile UDFN 1.6 x 1.6 x 0.55 mm for Board Space Saving MOSFET Ultra Low RDS(on)V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS

9.2. Size:133K onsemi
ntlus3a40pztag ntlus3a40pztbg.pdf

NTLUS3A40PZPower MOSFET-20 V, -9.4 A, mCoolt Single P-Channel,ESD, 2.0x2.0x0.55 mm UDFN PackageFeatures UDFN Package with Exposed Drain Pads for Excellent Thermalhttp://onsemi.comConductionMOSFET Low Profile UDFN 2.0x2.0x0.55 mm for Board Space SavingV(BR)DSS RDS(on) MAX ID MAX Lowest RDS(on) in 2.0x2.0 Package ESD Protected 29 mW @ -4.5 V These Devices

9.3. Size:139K onsemi
ntlus3a90pz.pdf

NTLUS3A90PZPower MOSFET-20 V, -5.0 A, mCoolt Single P-Channel,ESD, 1.6x1.6x0.55 mm UDFN PackageFeatures UDFN Package with Exposed Drain Pads for Excellent Thermalhttp://onsemi.comConductionMOSFET Low Profile UDFN 1.6x1.6x0.55 mm for Board Space SavingV(BR)DSS RDS(on) MAX ID MAX Lowest RDS(on) in 1.6x1.6 Package ESD Protected 62 mW @ -4.5 V These Devices

9.4. Size:143K onsemi
ntlus3a18pztbg ntlus3a18pztcg ntlus3a18pz ntlus3a18pztag.pdf

NTLUS3A18PZPower MOSFET-20 V, -8.2 A, Single P-Channel,2.0x2.0x0.55 mm mCoolt UDFN PackageFeatures UDFN Package with Exposed Drain Pads for Excellent ThermalConduction http://onsemi.com Low Profile UDFN 2.0x2.0x0.55 mm for Board Space SavingMOSFET Ultra Low RDS(on)V(BR)DSS RDS(on) MAX ID MAX ESD Diode-Protected Gate18 mW @ -4.5 V These Devices are Pb-Fre

9.5. Size:88K onsemi
ntlus3c18pz.pdf

NTLUS3C18PZPower MOSFET-12 V, -7.0 A, mCoolt Single P-Channel,1.6x1.6x0.5 mm mCool UDFN6 PackageFeatureshttp://onsemi.com Ultra Low RDS(on) UDFN Package with Exposed Drain Pads for Excellent ThermalMOSFETConductionV(BR)DSS RDS(on) MAX ID MAX Low Profile UDFN 1.6 x 1.6 x 0.5 mm for Board Space Saving24 mW @ -4.5 V -7.0 A These Devices are Pb-Free, Halogen Fr

9.6. Size:131K onsemi
ntlus3a90pztag ntlus3a90pztbg.pdf

9.7. Size:141K onsemi
ntlus3a40pz.pdf

NTLUS3A40PZPower MOSFET-20 V, -9.4 A, mCoolt Single P-Channel,ESD, 2.0x2.0x0.65 mm UDFN PackageFeatures UDFN Package with Exposed Drain Pads for Excellent Thermalhttp://onsemi.comConductionMOSFET Low Profile UDFN 2.0x2.0x0.65 mm for Board Space SavingV(BR)DSS RDS(on) MAX ID MAX Lowest RDS(on) in 2.0x2.0 Package ESD Protected 29 mW @ -4.5 V These Devices

9.8. Size:222K onsemi
ntlus3a18pz.pdf

NTLUS3A18PZMOSFET Power, Single,P-Channel, UDFN,2.0x2.0x0.55 mm-20 V, -8.2 Awww.onsemi.comFeatures UDFN Package with Exposed Drain Pads for Excellent ThermalMOSFETConductionV(BR)DSS RDS(on) MAX ID MAX Low Profile UDFN 2.0x2.0x0.55 mm for Board Space Saving18 mW @ -4.5 V Ultra Low RDS(on)25 mW @ -2.5 V-20 V -8.2 A ESD Diode-Protected Gate50 mW @

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