NTMFS4120NT1G Todos los transistores

 

NTMFS4120NT1G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NTMFS4120NT1G
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.9 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 11 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 32 nS
   Cossⓘ - Capacitancia de salida: 640 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0045 Ohm
   Paquete / Cubierta: SO-8FL

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NTMFS4120NT1G Datasheet (PDF)

 ..1. Size:136K  onsemi
ntmfs4120nt1g.pdf

NTMFS4120NT1G
NTMFS4120NT1G

NTMFS4120NPower MOSFET30 V, 31 A, Single N-Channel,SO-8 Flat LeadFeatures Low RDS(on)http://onsemi.com Optimized Gate Charge Low Inductance SO-8 PackageID MaxV(BR)DSS RDS(on) Typ These are Pb-Free Devices(Note 1)Applications3.5 mW @ 10 V30 V 31 A Notebooks, Graphics Cards4.2 mW @ 4.5 V DC-DC Converters Synchronous RectificationDMAXI

 4.1. Size:89K  onsemi
ntmfs4120n.pdf

NTMFS4120NT1G
NTMFS4120NT1G

NTMFS4120NPower MOSFET30 V, 31 A, Single N-Channel,SO-8 Flat LeadFeatures Low RDS(on)http://onsemi.com Optimized Gate Charge Low Inductance SO-8 PackageID MaxV(BR)DSS RDS(on) Typ These are Pb-Free Devices(Note 1)Applications3.5 mW @ 10 V30 V 31 A Notebooks, Graphics Cards4.2 mW @ 4.5 V DC-DC Converters Synchronous RectificationDMAXI

 6.1. Size:126K  onsemi
ntmfs4122nt1g.pdf

NTMFS4120NT1G
NTMFS4120NT1G

NTMFS4122NPower MOSFET30 V, 23 A, Single N-Channel,SO-8 Flat LeadFeatures Low RDS(on)http://onsemi.com Low Inductance SO-8 Package These are Pb-Free DevicesID MAXV(BR)DSS RDS(on) TYP(Note 1)Applications4.6 mW @ 10 V Notebooks, Graphics Cards30 V 23 A6.3 mW @ 4.5 V DC-DC Converters Synchronous RectificationDMAXIMUM RATINGS (TJ = 25C unl

 6.2. Size:89K  onsemi
ntmfs4121n.pdf

NTMFS4120NT1G
NTMFS4120NT1G

NTMFS4121NPower MOSFET30 V, 29 A, Single N-Channel,SO-8 Flat LeadFeatures Low RDS(on)http://onsemi.com Optimized Gate Charge Low Inductance SO-8 PackageID MaxV(BR)DSS RDS(on) Typ These are Pb-Free Devices(Note 1)Applications4.0 mW @ 10 V30 V 29 A Notebooks, Graphics Cards5.5 mW @ 4.5 V DC-DC Converters Synchronous RectificationDMAXI

 6.3. Size:84K  onsemi
ntmfs4122n.pdf

NTMFS4120NT1G
NTMFS4120NT1G

NTMFS4122NPower MOSFET30 V, 23 A, Single N-Channel,SO-8 Flat LeadFeatures Low RDS(on)http://onsemi.com Low Inductance SO-8 Package This is a Pb-Free DeviceID MAXApplicationsV(BR)DSS RDS(on) TYP(Note 1) Notebooks, Graphics Cards4.6 mW @ 10 V DC-DC Converters 30 V 23 A6.3 mW @ 4.5 V Synchronous RectificationMAXIMUM RATINGS (TJ = 25C unless o

 6.4. Size:132K  onsemi
ntmfs4121nt1g.pdf

NTMFS4120NT1G
NTMFS4120NT1G

NTMFS4121NPower MOSFET30 V, 29 A, Single N-Channel,SO-8 Flat LeadFeatures Low RDS(on)http://onsemi.com Optimized Gate Charge Low Inductance SO-8 PackageID MaxV(BR)DSS RDS(on) Typ(Note 1) These are Pb-Free Devices4.0 mW @ 10 VApplications30 V 29 A5.5 mW @ 4.5 V Notebooks, Graphics Cards DC-DC ConvertersD Synchronous RectificationMAXI

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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