NTMFS4701NT1G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: NTMFS4701NT1G
   Código: 4701N
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.9 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 7.7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Qgⓘ - Carga de la puerta: 11 nC
   trⓘ - Tiempo de subida: 4 nS
   Cossⓘ - Capacitancia de salida: 500 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.011 Ohm
   Paquete / Cubierta: SOIC-8FL

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NTMFS4701NT1G Datasheet (PDF)

..1. Size:127K onsemi
ntmfs4701nt1g.pdf

NTMFS4701NPower MOSFET30 V, 20 A, Single N-Channel, SOIC-8 Flat Lead PackageFeatures Thermally and Electrically Enhanced Packaging Compatible withhttp://onsemi.comStandard SOIC-8 New Package Provides Capability of Inspection and Probe AfterBoard MountingV(BR)DSS RDS(on) Typ ID Max Ultra Low RDS(on) (at 4.5 VGS), Low Gate Resistance and Low QG6.0 mW @ 10 V30 V

4.1. Size:85K onsemi
ntmfs4701n.pdf

NTMFS4701NPower MOSFET30 V, 20 A, Single N-Channel, SOIC-8 Flat Lead PackageFeatures Thermally and Electrically Enhanced Packaging Compatible withStandard SOIC-8http://onsemi.com New Package Provides Capability of Inspection and Probe AfterBoard MountingV(BR)DSS RDS(on) Typ ID Max Ultra Low RDS(on) (at 4.5 VGS), Low Gate Resistance and Low QG6.0 mW @ 10 V O

6.1. Size:125K onsemi
ntmfs4707nt1g.pdf

NTMFS4707NPower MOSFET30 V, 17 A, Single N-Channel, SOIC-8 Flat LeadFeatures Fast Switching Timeshttp://onsemi.com Low Gate Charge Low RDS(on)V(BR)DSS RDS(on) Typ ID Max Low Inductance SOIC-8 Package These are Pb-Free Devices 10 mW @ 10 V30 V 17 A13.5 mW @ 4.5 VApplications Notebooks, Graphics Cards DC-DC ConvertersN-Channel Synchronou

6.2. Size:92K onsemi
ntmfs4708n ntmfs4708nt1g.pdf

NTMFS4708NPower MOSFET30 V, 19 A, Single N-Channel, SOIC-8 FLFeatures Fast Switching Times Low Gate Chargehttp://onsemi.com Low RDS(on) Low Inductance SOIC-8 PackageV(BR)DSS RDS(on) Typ ID Max These are Pb-Free DevicesApplications7.3 mW @ 10 V30 V 19 A Notebooks, Graphics Cards10.1 mW @ 4.5 V DC-DC Converters Synchronous RectificationN

6.3. Size:85K onsemi
ntmfs4707n.pdf

NTMFS4707NPower MOSFET30 V, 17 A, Single N-Channel, SOIC-8 Flat LeadFeatures Fast Switching Timeshttp://onsemi.com Low Gate Charge Low RDS(on) Low Inductance SOIC-8 PackageV(BR)DSS RDS(on) Typ ID Max These are Pb-Free Devices10 mW @ 10 V30 V 17 AApplications13.5 mW @ 4.5 V Notebooks, Graphics Cards DC-DC Converters Synchronous Rectific

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