NTMFS4707NT1G Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NTMFS4707NT1G  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 6.9 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 5 nS

Cossⓘ - Capacitancia de salida: 295 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.013 Ohm

Encapsulados: SOIC-8FL

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NTMFS4707NT1G datasheet

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NTMFS4707NT1G

NTMFS4707N Power MOSFET 30 V, 17 A, Single N-Channel, SOIC-8 Flat Lead Features Fast Switching Times http //onsemi.com Low Gate Charge Low RDS(on) V(BR)DSS RDS(on) Typ ID Max Low Inductance SOIC-8 Package These are Pb-Free Devices 10 mW @ 10 V 30 V 17 A 13.5 mW @ 4.5 V Applications Notebooks, Graphics Cards DC-DC Converters N-Channel Synchronou

 4.1. Size:85K  onsemi
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NTMFS4707NT1G

NTMFS4707N Power MOSFET 30 V, 17 A, Single N-Channel, SOIC-8 Flat Lead Features Fast Switching Times http //onsemi.com Low Gate Charge Low RDS(on) Low Inductance SOIC-8 Package V(BR)DSS RDS(on) Typ ID Max These are Pb-Free Devices 10 mW @ 10 V 30 V 17 A Applications 13.5 mW @ 4.5 V Notebooks, Graphics Cards DC-DC Converters Synchronous Rectific

 6.1. Size:85K  onsemi
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NTMFS4707NT1G

NTMFS4701N Power MOSFET 30 V, 20 A, Single N-Channel, SOIC-8 Flat Lead Package Features Thermally and Electrically Enhanced Packaging Compatible with Standard SOIC-8 http //onsemi.com New Package Provides Capability of Inspection and Probe After Board Mounting V(BR)DSS RDS(on) Typ ID Max Ultra Low RDS(on) (at 4.5 VGS), Low Gate Resistance and Low QG 6.0 mW @ 10 V O

 6.2. Size:92K  onsemi
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NTMFS4707NT1G

NTMFS4708N Power MOSFET 30 V, 19 A, Single N-Channel, SOIC-8 FL Features Fast Switching Times Low Gate Charge http //onsemi.com Low RDS(on) Low Inductance SOIC-8 Package V(BR)DSS RDS(on) Typ ID Max These are Pb-Free Devices Applications 7.3 mW @ 10 V 30 V 19 A Notebooks, Graphics Cards 10.1 mW @ 4.5 V DC-DC Converters Synchronous Rectification N

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