NTMFS4823NT1G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NTMFS4823NT1G
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.86 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 6.9 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 29 nS
Cossⓘ - Capacitancia de salida: 163 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0106 Ohm
Paquete / Cubierta: SO-8FL
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NTMFS4823NT1G Datasheet (PDF)
ntmfs4823nt1g.pdf

NTMFS4823NPower MOSFET30 V, 30 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free DeviceV(BR)DSS RDS(ON) MAX ID MAXApplications Refer to Application Note AND8195/D10.5 mW @ 10 V30 V30 A CPU Pow
ntmfs4823n.pdf

NTMFS4823NPower MOSFET30 V, 30 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free DeviceV(BR)DSS RDS(ON) MAX ID MAXApplications Refer to Application Note AND8195/D10.5 mW @ 10 V30 V30 A CPU Pow
ntmfs4826ne.pdf

NTMFS4826NEPower MOSFET30 V, 66 A, Single N-Channel, SO-8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses Dual Sided Cooling Capability These are Pb-Free Devices* V(BR)DSS RDS(ON) MAX ID MAX5.9 mW @ 10 V 66 AApplications30 V8.7 mW @ 4.5 V 55
ntmfs4825nfe.pdf

NTMFS4825NFEPower MOSFET30 V, 171 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Includes Schottky Diode Optimized Gate Charge to Minimize Switching Losses Dual Sided Cooling CapabilityV(BR)DSS RDS(ON) MAX ID MAX These are Pb-Free Device2.0 mW @ 10 V 171 A30 V
Otros transistores... NTMFS4120NT1G , NTMFS4121NT1G , NTMFS4122NT1G , NTMFS4701NT1G , NTMFS4707NT1G , NTMFS4708NT1G , NTMFS4744NT1G , NTMFS4821NT1G , 75N75 , NTMFS4825NFET1G , NTMFS4833NST1G , NTMFS4833NT1G , NTMFS4834NT1G , NTMFS4835NT1G , NTMFS4836NT1G , NTMFS4837NHT1G , NTMFS4837NT1G .
History: CSD17571Q2 | PNM23T100V6 | PNM723T703E0-2 | BUK962R6-40E | JCS18N25VC | HM7746K | QM3006U
History: CSD17571Q2 | PNM23T100V6 | PNM723T703E0-2 | BUK962R6-40E | JCS18N25VC | HM7746K | QM3006U



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