NTMFS4837NT1G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NTMFS4837NT1G
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.88 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 10 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 55 nS
Cossⓘ - Capacitancia de salida: 444 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.005 Ohm
Paquete / Cubierta: SO-8FL
Búsqueda de reemplazo de NTMFS4837NT1G MOSFET
NTMFS4837NT1G Datasheet (PDF)
ntmfs4837nt1g.pdf

NTMFS4837NPower MOSFET30 V, 74 A, Single N-Channel, SO-8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free DevicesApplicationsV(BR)DSS RDS(ON) MAX ID MAX Refer to Application Note AND8195/D5.0 mW @ 10 V CPU Power Delivery 3
ntmfs4837nht1g.pdf

NTMFS4837NHPower MOSFET30 V, 75 A, Single N-Channel, SO-8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses Low RGV(BR)DSS RDS(ON) MAX ID MAX These are Pb-Free Devices5.0 mW @ 10 V30 V75 AApplications 8.0 mW @ 4.5 V Refer to Application
ntmfs4837n-d.pdf

NTMFS4837NPower MOSFET30 V, 74 A, Single N-Channel, SO-8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices*ApplicationsV(BR)DSS RDS(ON) MAX ID MAX Refer to Application Note AND8195/D5.0 mW @ 10 V CPU Power Delivery
ntmfs4837nh.pdf

NTMFS4837NHPower MOSFET30 V, 75 A, Single N-Channel, SO-8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses Low RGV(BR)DSS RDS(ON) MAX ID MAX These are Pb-Free Devices*5.0 mW @ 10 V30 V75 AApplications 8.0 mW @ 4.5 V Refer to Application
Otros transistores... NTMFS4823NT1G , NTMFS4825NFET1G , NTMFS4833NST1G , NTMFS4833NT1G , NTMFS4834NT1G , NTMFS4835NT1G , NTMFS4836NT1G , NTMFS4837NHT1G , AO3401 , NTMFS4839NHT1G , NTMFS4839NT1G , NTMFS4841NHT1G , NTMFS4841NT1G , NTMFS4845NT1G , NTMFS4846NT1G , NTMFS4847NAT1G , NTMFS4847NT1G .



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