NTMFS4837NT1G Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NTMFS4837NT1G  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.88 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 10 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 55 nS

Cossⓘ - Capacitancia de salida: 444 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.005 Ohm

Encapsulados: SO-8FL

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NTMFS4837NT1G datasheet

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 ntmfs4837nt1g.pdf pdf_icon

NTMFS4837NT1G

NTMFS4837N Power MOSFET 30 V, 74 A, Single N-Channel, SO-8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices Applications V(BR)DSS RDS(ON) MAX ID MAX Refer to Application Note AND8195/D 5.0 mW @ 10 V CPU Power Delivery 3

 4.1. Size:136K  onsemi
 ntmfs4837nht1g.pdf pdf_icon

NTMFS4837NT1G

NTMFS4837NH Power MOSFET 30 V, 75 A, Single N-Channel, SO-8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses Low RG V(BR)DSS RDS(ON) MAX ID MAX These are Pb-Free Devices 5.0 mW @ 10 V 30 V 75 A Applications 8.0 mW @ 4.5 V Refer to Application

 4.2. Size:134K  onsemi
 ntmfs4837n-d.pdf pdf_icon

NTMFS4837NT1G

NTMFS4837N Power MOSFET 30 V, 74 A, Single N-Channel, SO-8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices* Applications V(BR)DSS RDS(ON) MAX ID MAX Refer to Application Note AND8195/D 5.0 mW @ 10 V CPU Power Delivery

 4.3. Size:137K  onsemi
 ntmfs4837nh.pdf pdf_icon

NTMFS4837NT1G

NTMFS4837NH Power MOSFET 30 V, 75 A, Single N-Channel, SO-8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses Low RG V(BR)DSS RDS(ON) MAX ID MAX These are Pb-Free Devices* 5.0 mW @ 10 V 30 V 75 A Applications 8.0 mW @ 4.5 V Refer to Application

MOSTRAR MÁS

Otros transistores... NTMFS4823NT1G, NTMFS4825NFET1G, NTMFS4833NST1G, NTMFS4833NT1G, NTMFS4834NT1G, NTMFS4835NT1G, NTMFS4836NT1G, NTMFS4837NHT1G, P60NF06, NTMFS4839NHT1G, NTMFS4839NT1G, NTMFS4841NHT1G, NTMFS4841NT1G, NTMFS4845NT1G, NTMFS4846NT1G, NTMFS4847NAT1G, NTMFS4847NT1G