NTMFS4847NAT1G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NTMFS4847NAT1G
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.88 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 16 V
|Id|ⓘ - Corriente continua de drenaje: 11.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 53 nS
Cossⓘ - Capacitancia de salida: 466 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0041 Ohm
Paquete / Cubierta: SO-8FL
Búsqueda de reemplazo de NTMFS4847NAT1G MOSFET
NTMFS4847NAT1G Datasheet (PDF)
ntmfs4847nat1g ntmfs4847nt1g.pdf

NTMFS4847NPower MOSFET30 V, 85 A, Single N-Channel, SO-8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com Thermally Enhanced SO-8 Package These are Pb-Free DevicesV(BR)DSS RDS(ON) MAX ID MAXApplications4.1 mW @ 10 V Refer to Application Not
ntmfs4847n.pdf

NTMFS4847NPower MOSFET30 V, 85 A, Single N-Channel, SO-8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com Thermally Enhanced SO-8 Package These are Pb-Free Devices*V(BR)DSS RDS(ON) MAX ID MAXApplications4.1 mW @ 10 V Refer to Application No
ntmfs4849nt1g.pdf

NTMFS4849NPower MOSFET30 V, 71 A, Single N-Channel, SO-8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com Thermally Enhanced SO8 Package These are Pb-Free DevicesV(BR)DSS RDS(ON) MAX ID MAXApplications5.1 mW @ 10 V Refer to Application Note
ntmfs4845nt1g.pdf

NTMFS4845NPower MOSFET30 V, 115 A, Single N-Channel, SO-8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com Thermally Enhanced SO-8 Package These are Pb-Free DevicesV(BR)DSS RDS(ON) MAX ID MAXApplications2.9 mW @ 10 V Refer to Application No
Otros transistores... NTMFS4837NHT1G , NTMFS4837NT1G , NTMFS4839NHT1G , NTMFS4839NT1G , NTMFS4841NHT1G , NTMFS4841NT1G , NTMFS4845NT1G , NTMFS4846NT1G , RU7088R , NTMFS4847NT1G , NTMFS4849NT1G , NTMFS4851NT1G , NTMFS4852NT1G , NTMFS4854NST1G , NTMFS4897NFT1G , NTMFS4898NFT1G , NTMFS4899NFT1G .
History: 8N65KG-TF3T-T | STD90N03L | TPM2102BC3 | 2SK3674-01SJ | CSFR7N60D | 2SK2276
History: 8N65KG-TF3T-T | STD90N03L | TPM2102BC3 | 2SK3674-01SJ | CSFR7N60D | 2SK2276



Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: JMSL1010PU | JMSL1010PP | JMSL1010PKS | JMSL1010PK | JMSL1010PGS | JMSL1010PGQ | JMSL1010PGD | JMSL1010PG | JMSL1010PE | JMSL1010PC | JMSL1010AUQ | JMSL1010AU | JMSL1010AP | JMSL1010AKQ | JMSL1010AK | JMSL1010AGQ
Popular searches
2sc711 datasheet | bu4508dx | 2sc1364 | 2sc2320 | d669a transistor | 2sc1419 | 2sc1124 | 2n408