NTMFS4847NAT1G
MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NTMFS4847NAT1G
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.88
W
|Vds|ⓘ - Voltaje máximo drenador - fuente: 30
V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 16
V
|Id|ⓘ - Corriente continua de drenaje: 11.5
A
Tjⓘ - Temperatura máxima de unión: 150
°C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 53
nS
Cossⓘ - Capacitancia
de salida: 466
pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0041
Ohm
Paquete / Cubierta:
SO-8FL
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NTMFS4847NAT1G
Datasheet (PDF)
..1. Size:106K onsemi
ntmfs4847nat1g ntmfs4847nt1g.pdf 
NTMFS4847NPower MOSFET30 V, 85 A, Single N-Channel, SO-8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com Thermally Enhanced SO-8 Package These are Pb-Free DevicesV(BR)DSS RDS(ON) MAX ID MAXApplications4.1 mW @ 10 V Refer to Application Not
4.1. Size:136K onsemi
ntmfs4847n.pdf 
NTMFS4847NPower MOSFET30 V, 85 A, Single N-Channel, SO-8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com Thermally Enhanced SO-8 Package These are Pb-Free Devices*V(BR)DSS RDS(ON) MAX ID MAXApplications4.1 mW @ 10 V Refer to Application No
6.1. Size:107K onsemi
ntmfs4849nt1g.pdf 
NTMFS4849NPower MOSFET30 V, 71 A, Single N-Channel, SO-8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com Thermally Enhanced SO8 Package These are Pb-Free DevicesV(BR)DSS RDS(ON) MAX ID MAXApplications5.1 mW @ 10 V Refer to Application Note
6.2. Size:107K onsemi
ntmfs4845nt1g.pdf 
NTMFS4845NPower MOSFET30 V, 115 A, Single N-Channel, SO-8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com Thermally Enhanced SO-8 Package These are Pb-Free DevicesV(BR)DSS RDS(ON) MAX ID MAXApplications2.9 mW @ 10 V Refer to Application No
6.3. Size:106K onsemi
ntmfs4846nt1g.pdf 
NTMFS4846NPower MOSFET30 V, 100 A, Single N-Channel, SO-8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com Thermally Enhanced SO8 Package These are Pb-Free DevicesV(BR)DSS RDS(ON) MAX ID MAXApplications3.4 mW @ 10 V Refer to Application Not
6.4. Size:137K onsemi
ntmfs4845n.pdf 
NTMFS4845NPower MOSFET30 V, 115 A, Single N-Channel, SO-8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com Thermally Enhanced SO-8 Package These are Pb-Free Devices*V(BR)DSS RDS(ON) MAX ID MAXApplications2.9 mW @ 10 V Refer to Application N
6.5. Size:138K onsemi
ntmfs4841nh.pdf 
NTMFS4841NHPower MOSFET30 V, 59 A, Single N-Channel, SO-8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com Low RG These are Pb-Free Devices*V(BR)DSS RDS(ON) MAX ID MAXApplications7.0 mW @ 10 V Refer to Application Note AND8195/D30 V59 A
6.6. Size:145K onsemi
ntmfs4841n.pdf 
NTMFS4841NPower MOSFET30 V, 57 A, Single N-Channel, SO-8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices*V(BR)DSS RDS(ON) MAX ID MAXApplications7.0 mW @ 10 V Refer to Application Note AND8195/D30 V57 A11.4 mW @ 4
6.7. Size:108K onsemi
ntmfs4841nht1g.pdf 
NTMFS4841NHPower MOSFET30 V, 59 A, Single N-Channel, SO-8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com Low RG These are Pb-Free DevicesV(BR)DSS RDS(ON) MAX ID MAXApplications7.0 mW @ 10 V Refer to Application Note AND8195/D30 V59 A
6.8. Size:115K onsemi
ntmfs4841nt1g.pdf 
NTMFS4841NPower MOSFET30 V, 57 A, Single N-Channel, SO-8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free DevicesV(BR)DSS RDS(ON) MAX ID MAXApplications7.0 mW @ 10 V Refer to Application Note AND8195/D30 V57 A11.4 mW @ 4.
6.9. Size:137K onsemi
ntmfs4849n.pdf 
NTMFS4849NPower MOSFET30 V, 71 A, Single N-Channel, SO-8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com Thermally Enhanced SO8 Package These are Pb-Free Devices*V(BR)DSS RDS(ON) MAX ID MAXApplications5.1 mW @ 10 V Refer to Application Not
6.10. Size:137K onsemi
ntmfs4846n.pdf 
NTMFS4846NPower MOSFET30 V, 100 A, Single N-Channel, SO-8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com Thermally Enhanced SO8 Package These are Pb-Free Devices*V(BR)DSS RDS(ON) MAX ID MAXApplications3.4 mW @ 10 V Refer to Application No
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