NTMFS4898NFT1G Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NTMFS4898NFT1G  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.93 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 13.2 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 23 nS

Cossⓘ - Capacitancia de salida: 700 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.003 Ohm

Encapsulados: SO-8FL

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NTMFS4898NFT1G datasheet

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NTMFS4898NFT1G

NTMFS4898NF Power MOSFET 30 V, 117 A, Single N-Channel, SO-8FL Features Integrated Schottky Diode Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(ON) MAX ID MAX Compliant 3.0 mW @ 10 V

 3.1. Size:139K  onsemi
 ntmfs4898nf.pdf pdf_icon

NTMFS4898NFT1G

NTMFS4898NF Power MOSFET 30 V, 117 A, Single N-Channel, SO-8FL Features Integrated Schottky Diode Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(ON) MAX ID MAX Compliant 3.0 mW @ 10 V

 6.1. Size:105K  onsemi
 ntmfs4899nf.pdf pdf_icon

NTMFS4898NFT1G

NTMFS4899NF Power MOSFET 30 V, 75 A, Single N-Channel, SO-8 FL Features Integrated Schottky Diode Low RDS(on) to Minimize Conduction Losses http //onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(ON) MAX ID MAX Compliant 5.0 mW @ 10 V

 6.2. Size:104K  onsemi
 ntmfs4897nft1g.pdf pdf_icon

NTMFS4898NFT1G

NTMFS4897NF Power MOSFET 30 V, 171 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses http //onsemi.com Low Capacitance to Minimize Driver Losses Includes Schottky Diode Optimized Gate Charge to Minimize Switching Losses V(BR)DSS RDS(ON) MAX ID MAX These are Pb-Free Device 2.0 mW @ 10 V 30 V 171 A Applications 3.0 mW @ 4.5 V C

MOSTRAR MÁS

Otros transistores... NTMFS4846NT1G, NTMFS4847NAT1G, NTMFS4847NT1G, NTMFS4849NT1G, NTMFS4851NT1G, NTMFS4852NT1G, NTMFS4854NST1G, NTMFS4897NFT1G, K2611, NTMFS4899NFT1G, NTMFS4921NT1G, NTMFS4922NE, NTMFS4923NET1G, NTMFS4925NE, NTMFS4925NT1G, NTMFS4926NE, NTMFS4926NT1G