2SK1482 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK1482N-CHANNEL MOS FIELD EFFECT TRANSISTORFOR SWITCHINGDESCRIPTIONPACKAGE DRAWING (Unit : mm) The 2SK1482 is N-channel vertical type MOS FET switching device whichcan be directly driven from an IC operating with a 5 V single power supply.5.2 MAX.The device featuring low on-state resistance is of the voltage drive type andthus is ideal

2SK1489 .5 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSII ) 2SK1489 Chopper Regulator Applications Unit: mm Low drain-source ON resistance : RDS (ON) = 0.8 (typ.) High forward transfer admittance : |Yfs| = 6.0 S (typ.) Low leakage current : IDSS = 300 A (max) (VDS = 800 V) Enhancement mode : Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA) Absolu

( DataSheet : www.DataSheet4U.com )www.DataSheet4U.com

2SK1486 .5 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSIII ) 2SK1486 Chopper Regulator, DC-DC Converter and Motor Drive Unit: mm Applications Low drain-source ON resistance : RDS (ON) = 0.08 (typ.) High forward transfer admittance : |Y | = 14 S (typ.) fs Low leakage current : I = 300 A (max) (V = 300 V) DSS DS Enhancement-mode : Vth = 2.

Preliminary Data Sheet 2SK1483C R07DS1263EJ0200Rev.2.00N-CHANNEL MOSFET FOR SWITCHING Jun 19, 2015Description The 2SK1483C, N-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven directly by a 2.5 V power source. Features Directly driven by a 2.5 V power source. Low on-state resistance RDS(on)1 = 63 m MAX. (VGS = 4

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK1485N-CHANNEL MOS FIELD EFFECT TRANSISTORFOR SWITCHINGDESCRIPTIONPACKAGE DRAWING (Unit : mm) The 2SK1485, N-channel vertical type MOS FET is a switching devicewhich can be driven directly by the output of ICs having a 5 V power source.4.5 0.1 As the MOS FET has low on-state resistance and excellent switching 1.6 0.2 1.5 0.1c

SMD Type MOSFETN-Channel MOSFET2SK14831.70 0.1 Features VDS (V) = 30V ID = 2 A RDS(ON) 800m (VGS = 4V)0.42 0.10.46 0.1 RDS(ON) 400m (VGS = 10V) Complments the 2SJ1971.Gate2.Drain3.Source Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 30V Gate-Source Voltage VGS 20 Continuous

2SK1485www.VBsemi.comN-Channel 100 V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Typ.ID (A)a Qg (Typ.) 100 % Rg and UIS Tested0.102 at VGS = 10 V 4.20.120 at VGS = 6 V 100 3.8 2.9 nC0.125 at VGS = 4.5 V 3.6APPLICATIONS DC/DC Converters / Boost Converters Load Switch LED Backlighting in LCD TVsD

isc N-Channel MOSFET Transistor 2SK1487DESCRIPTIONDrain Current I = 10A@ T =25D CDrain Source Voltage-: V = 450V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned especially for high voltage,high speed applications,such as off-line switching power supplies , UPS,AC and DCmoto

isc N-Channel MOSFET Transistor 2SK1488DESCRIPTIONDrain Current I =10A@ T =25D CDrain Source Voltage-: V =500 (Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay drivers.ABSOLUTE MAX