NTMFS4946N Todos los transistores

 

NTMFS4946N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NTMFS4946N
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.89 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 12.7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 34 nS
   Cossⓘ - Capacitancia de salida: 562 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0034 Ohm
   Paquete / Cubierta: SO-8FL
 

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NTMFS4946N Datasheet (PDF)

 ..1. Size:105K  onsemi
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NTMFS4946N

NTMFS4946NPower MOSFET30 V, 100 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com Thermally Enhanced SO8 Package These are Pb-Free DeviceV(BR)DSS RDS(ON) MAX ID MAXApplications3.4 mW @ 10 V CPU Power Delivery30 V

 6.1. Size:108K  onsemi
ntmfs4943nt1g.pdf pdf_icon

NTMFS4946N

NTMFS4943NPower MOSFET30 V, 41 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http://onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(ON) MAX ID MAXApplications7.2 mW @ 10 V CPU Power Deli

 6.2. Size:146K  onsemi
ntmfs4941n.pdf pdf_icon

NTMFS4946N

NTMFS4941NPower MOSFET30 V, 47 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(ON) MAX ID MAXApplications 6.2 mW @ 10 V30 V 47 A CPU

 6.3. Size:108K  onsemi
ntmfs4941nt1g.pdf pdf_icon

NTMFS4946N

NTMFS4941NPower MOSFET30 V, 47 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(ON) MAX ID MAXApplications6.2 mW @ 10 V30 V 47 A CP

Otros transistores... NTMFS4935NBT1G , NTMFS4935NCT1G , NTMFS4935NT1G , NTMFS4936NT1G , NTMFS4937NT1G , NTMFS4939NT1G , NTMFS4941NT1G , NTMFS4943NT1G , IRFP260N , NTMFS4982NF , NTMFS4983NF , NTMFS4985NF , NTMFS4C01N , NTMFS4C03N , NTMFS4C05N , NTMFS4C06N , NTMFS4C08N .

History: IPB60R299CP | HY4306B6 | 2SK1478 | IXFT12N100F | BRFL13N50 | 2SK65 | CEF02N6G

 

 
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