NTMFS4946N Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NTMFS4946N  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.89 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 12.7 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 34 nS

Cossⓘ - Capacitancia de salida: 562 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0034 Ohm

Encapsulados: SO-8FL

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NTMFS4946N datasheet

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NTMFS4946N

NTMFS4946N Power MOSFET 30 V, 100 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com Thermally Enhanced SO8 Package These are Pb-Free Device V(BR)DSS RDS(ON) MAX ID MAX Applications 3.4 mW @ 10 V CPU Power Delivery 30 V

 6.1. Size:108K  onsemi
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NTMFS4946N

NTMFS4943N Power MOSFET 30 V, 41 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX Applications 7.2 mW @ 10 V CPU Power Deli

 6.2. Size:146K  onsemi
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NTMFS4946N

NTMFS4941N Power MOSFET 30 V, 47 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX Applications 6.2 mW @ 10 V 30 V 47 A CPU

 6.3. Size:108K  onsemi
 ntmfs4941nt1g.pdf pdf_icon

NTMFS4946N

NTMFS4941N Power MOSFET 30 V, 47 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX Applications 6.2 mW @ 10 V 30 V 47 A CP

MOSTRAR MÁS

Otros transistores... NTMFS4935NBT1G, NTMFS4935NCT1G, NTMFS4935NT1G, NTMFS4936NT1G, NTMFS4937NT1G, NTMFS4939NT1G, NTMFS4941NT1G, NTMFS4943NT1G, IRLZ44N, NTMFS4982NF, NTMFS4983NF, NTMFS4985NF, NTMFS4C01N, NTMFS4C03N, NTMFS4C05N, NTMFS4C06N, NTMFS4C08N