NTMFS4H02N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NTMFS4H02N
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 3.13 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 25 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 37 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 20 nS
Cossⓘ - Capacitancia de salida: 1814 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0014 Ohm
Paquete / Cubierta: SO-8FL
Búsqueda de reemplazo de NTMFS4H02N MOSFET
NTMFS4H02N Datasheet (PDF)
ntmfs4h02n.pdf

NTMFS4H02NPower MOSFET25 V, 193 A, Single N-Channel, SO-8FLFeatures Optimized Design to Minimize Conduction and Switching Losses Optimized Package to Minimize Parasitic Inductanceshttp://onsemi.com Optimized material for improved thermal performance These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantVGS MAX RDS(on) TYP QGTOTApplications4.5
ntmfs4h02nf.pdf

NTMFS4H02NFPower MOSFET25 V, 193 A, Single N-Channel, SO-8FLFeatures Integrated Schottky Diode Optimized Design to Minimize Conduction and Switching Losses Optimized Package to Minimize Parasitic Inductanceswww.onsemi.com Optimized material for improved thermal performance These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantVGS MAX RDS(on)
ntmfs4h01nf.pdf

NTMFS4H01NFPower MOSFET25 V, 334 A, Single N-Channel, SO-8FLFeatures Integrated Schottky Diode Optimized Design to Minimize Conduction and Switching Losses Optimized Package to Minimize Parasitic Inductances Optimized material for improved thermal performance www.onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantVGS MAX RDS(on) T
ntmfs4h01n.pdf

NTMFS4H01NPower MOSFET25 V, 334 A, Single N-Channel, SO-8FLFeatures Optimized Design to Minimize Conduction and Switching Losses Optimized Package to Minimize Parasitic Inductances Optimized material for improved thermal performancehttp://onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantVGS MAX RDS(on) TYP QGTOTApplications
Otros transistores... NTMFS4C06N , NTMFS4C08N , NTMFS4C09NT1G , NTMFS4C10N , NTMFS4C13N , NTMFS4C35N , NTMFS4H01N , NTMFS4H01NF , 7N65 , NTMFS4H02NF , NTMFS5830NLT1G , NTMFS5832NLT1G , NTMFS5834NLT1G , NTMFS5844NLT1G , NTMFS5C404NL , NTMFS5C404NLT , NTMFS5C410NL .



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