NTMFS4H02N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: NTMFS4H02N
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 3.13 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 25 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 37 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 20 nS
   Cossⓘ - Capacitancia de salida: 1814 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0014 Ohm
   Paquete / Cubierta: SO-8FL

Búsqueda de reemplazo de MOSFET NTMFS4H02N

NTMFS4H02N Datasheet (PDF)

..1. Size:84K onsemi
ntmfs4h02n.pdf

NTMFS4H02NPower MOSFET25 V, 193 A, Single N-Channel, SO-8FLFeatures Optimized Design to Minimize Conduction and Switching Losses Optimized Package to Minimize Parasitic Inductanceshttp://onsemi.com Optimized material for improved thermal performance These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantVGS MAX RDS(on) TYP QGTOTApplications4.5

0.1. Size:86K onsemi
ntmfs4h02nf.pdf

NTMFS4H02NFPower MOSFET25 V, 193 A, Single N-Channel, SO-8FLFeatures Integrated Schottky Diode Optimized Design to Minimize Conduction and Switching Losses Optimized Package to Minimize Parasitic Inductanceswww.onsemi.com Optimized material for improved thermal performance These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantVGS MAX RDS(on)

6.1. Size:84K onsemi
ntmfs4h01nf.pdf

NTMFS4H01NFPower MOSFET25 V, 334 A, Single N-Channel, SO-8FLFeatures Integrated Schottky Diode Optimized Design to Minimize Conduction and Switching Losses Optimized Package to Minimize Parasitic Inductances Optimized material for improved thermal performance www.onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantVGS MAX RDS(on) T

6.2. Size:81K onsemi
ntmfs4h01n.pdf

NTMFS4H01NPower MOSFET25 V, 334 A, Single N-Channel, SO-8FLFeatures Optimized Design to Minimize Conduction and Switching Losses Optimized Package to Minimize Parasitic Inductances Optimized material for improved thermal performancehttp://onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantVGS MAX RDS(on) TYP QGTOTApplications

6.3. Size:89K onsemi
ntmfs4h013nf.pdf

NTMFS4H013NFPower MOSFET25 V, 269 A, Single N-Channel, SO-8FLFeatures Integrated Schottky Diode Optimized Design to Minimize Conduction and Switching Losseswww.onsemi.com Optimized Package to Minimize Parasitic Inductances Optimized material for improved thermal performance These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSVGS MAX RDS(on) TYP QGTOT

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: DMN2400UFB | LNF12N65 | 5N40

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