NTMFS5C410NL Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NTMFS5C410NL 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 3.2 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 46 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 130 nS
Cossⓘ - Capacitancia de salida: 4156 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0009 Ohm
Encapsulados: DFN5
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NTMFS5C410NL datasheet
ntmfs5c410nl.pdf
NTMFS5C410NL Power MOSFET 40 V, 0.9 mW, 302 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses http //onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 0.9 mW @ 10 V
ntmfs5c410nlt.pdf
NTMFS5C410NLT Power MOSFET 40 V, 0.9 mW, 315 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses NTMFS5C410NLTWF - Wettable Flank Option for Enhanced Optical Inspection V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Com
ntmfs5c410nt3g.pdf
MOSFET Single, N-Channel 40 V, 0.92 mW, 300 A NTMFS5C410N Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 40 V 0.92 mW @ 10 V 300 A MAXIMUM RATINGS (TJ = 25 C unless otherwise
ntmfs5c410n.pdf
MOSFET Single, N-Channel 40 V, 0.92 mW, 300 A NTMFS5C410N Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 40 V 0.92 mW @ 10 V 300 A MAXIMUM RATINGS (TJ = 25 C unless otherwise
Otros transistores... NTMFS4H02N, NTMFS4H02NF, NTMFS5830NLT1G, NTMFS5832NLT1G, NTMFS5834NLT1G, NTMFS5844NLT1G, NTMFS5C404NL, NTMFS5C404NLT, IRLB4132, NTMFS5C410NLT, NTMFS5C423NL, NTMFS5C442NL, NTMFS5C442NLT, NTMFS5C604NL, NTMFS5C612NL, NTMFS5C646NL, NTMFS5C670NL
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