NTMS4802NR2G Todos los transistores

 

NTMS4802NR2G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NTMS4802NR2G
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.91 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 11.1 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 42 nS
   Cossⓘ - Capacitancia de salida: 880 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.004 Ohm
   Paquete / Cubierta: SO-8
 

 Búsqueda de reemplazo de NTMS4802NR2G MOSFET

   - Selección ⓘ de transistores por parámetros

 

NTMS4802NR2G Datasheet (PDF)

 ..1. Size:111K  onsemi
ntms4802n ntms4802nr2g.pdf pdf_icon

NTMS4802NR2G

NTMS4802NPower MOSFET30 V, 18 A, N-Channel, SO-8Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses This is a Pb-Free DeviceV(BR)DSS RDS(ON) MAX ID MAXApplications4.0 mW @ 10 V30 V 18 A DC-DC Converters5.5 mW @ 4.5 V Synchronous MOSFET

 7.1. Size:88K  onsemi
ntms4807n-d ntms4807nr2g.pdf pdf_icon

NTMS4802NR2G

NTMS4807NPower MOSFET30 V, 14.8 A, N-Channel, SO-8Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com This is a Pb-Free DeviceV(BR)DSS RDS(ON) MAX ID MAXApplications6.1 mW @ 10 V Disk Drives30 V 14.8 A DC-DC Converters 7.5 mW @ 4.5 V Pri

 7.2. Size:136K  onsemi
ntms4800n.pdf pdf_icon

NTMS4802NR2G

NTMS4800NPower MOSFET30 V, 8 A, N-Channel, SOIC-8Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses SOIC-8 Surface Mount Package Saves Board SpaceV(BR)DSS RDS(ON) MAX ID MAX This is a Pb-Free Device20 mW @ 10 VApplications30 V 8 A27 mW @ 4.5 V

 7.3. Size:132K  onsemi
ntms4800nr2g.pdf pdf_icon

NTMS4802NR2G

NTMS4800NPower MOSFET30 V, 8 A, N-Channel, SOIC-8Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses SOIC-8 Surface Mount Package Saves Board SpaceV(BR)DSS RDS(ON) MAX ID MAX This is a Pb-Free Device20 mW @ 10 VApplications30 V 8 A27 mW @ 4.5 V

Otros transistores... NTMS4404NR2 , NTMS4503NR2 , NTMS4700NR2 , NTMS4705NR2G , NTMS4706NR2 , NTMS4706NR2G , NTMS4800NR2G , NTMS4801NR2G , P0903BDG , NTMS4807NR2G , NTMS4816NR2G , NTMS4872NR2G , NTMS4873NFR2G , NTMS4916NR2G , NTMS4917NR2G , NTMS4937NR2G , NTMS4939NR2G .

History: SRC60R045FB | SML5022BN | RJK0214DPA | SI9926DY | IPAN60R650CE | 2N7640-GA

 

 
Back to Top

 


 
.