NTMS4917NR2G Todos los transistores

 

NTMS4917NR2G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NTMS4917NR2G
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.88 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 7.1 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 6.3 nS
   Cossⓘ - Capacitancia de salida: 325 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.011 Ohm
   Paquete / Cubierta: SO-8

 Búsqueda de reemplazo de MOSFET NTMS4917NR2G

 

NTMS4917NR2G Datasheet (PDF)

 ..1. Size:103K  onsemi
 ntms4917nr2g.pdf pdf_icon

NTMS4917NR2G

NTMS4917N Power MOSFET 30 V, 10.5 A, N-Channel, SO-8 Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com Optimized for 5 V, 12 V Gate Drives These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(ON) MAX ID MAX Compliant 11 mW @ 10 V

 5.1. Size:114K  onsemi
 ntms4917n.pdf pdf_icon

NTMS4917NR2G

NTMS4917N Power MOSFET 30 V, 10.5 A, N-Channel, SO-8 Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com Optimized for 5 V, 12 V Gate Drives These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(ON) MAX ID MAX Compliant 11 mW @ 10 V

 7.1. Size:136K  onsemi
 ntms4916n.pdf pdf_icon

NTMS4917NR2G

NTMS4916N Power MOSFET 30 V, 11.6 A, N-Channel, SO-8 Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com Optimized for 5 V, 12 V Gate Drives These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(ON) MAX ID MAX Compliant 9 mW @ 10 V A

 7.2. Size:109K  onsemi
 ntms4916nr2g.pdf pdf_icon

NTMS4917NR2G

NTMS4916N Power MOSFET 30 V, 11.6 A, N-Channel, SO-8 Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com Optimized for 5 V, 12 V Gate Drives These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(ON) MAX ID MAX Compliant 9 mW @ 10 V A

MOSTRAR MÁS

Otros transistores... NTMS4800NR2G , NTMS4801NR2G , NTMS4802NR2G , NTMS4807NR2G , NTMS4816NR2G , NTMS4872NR2G , NTMS4873NFR2G , NTMS4916NR2G , AO3407 , NTMS4937NR2G , NTMS4939NR2G , NTMS4N01R2G , NTMS4P01R2 , NTMS5835NLR2G , NTMS5838NLR2G , NTMS5P02R2G , NTMS5P02R2SG .

 

 
Back to Top

 


 
.