NTP75N06L MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NTP75N06L
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 214 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 75 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 265 nS
Cossⓘ - Capacitancia de salida: 1029 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.011 Ohm
Paquete / Cubierta: TO-220
Búsqueda de reemplazo de MOSFET NTP75N06L
Principales características: NTP75N06L
ntb75n06l ntp75n06l ntp75n06l ntb75n06l.pdf
NTP75N06L, NTB75N06L Power MOSFET 75 Amps, 60 Volts, Logic Level N-Channel TO-220 and D2PAK http //onsemi.com Designed for low voltage, high speed switching applications in 75 AMPERES, 60 VOLTS power supplies, converters and power motor controls and bridge circuits. RDS(on) = 11 mW Features N-Channel Pb-Free Packages are Available D Typical Applications Power Supplies G
ntb75n06g ntp75n06 ntp75n06 ntb75n06.pdf
NTP75N06, NTB75N06 Power MOSFET 75 Amps, 60 Volts, N-Channel TO-220 and D2PAK Designed for low voltage, high speed switching applications in http //onsemi.com power supplies, converters and power motor controls and bridge circuits. 75 AMPERES, 60 VOLTS Features RDS(on) = 9.5 mW Pb-Free Packages are Available N-Channel D Typical Applications Power Supplies Converters
ntb75n03-006 ntp75n03-06 ntb75n03-06 ntp75n03-6g.pdf
NTP75N03-06, NTB75N03-06 Power MOSFET 75 Amps, 30 Volts N-Channel TO-220 and D2PAK http //onsemi.com This 20 VGS gate drive vertical Power MOSFET is a general purpose part that provides the best of design available today in a low V(BR)DSS RDS(on) TYP ID MAX cost power package. This power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The 30
ntb75n03r ntb75n03r ntp75n03r ntp75n03r.pdf
NTB75N03R, NTP75N03R Power MOSFET 75 Amps, 25 Volts N-Channel D2PAK, TO-220 Features http //onsemi.com Planar HD3e Process for Fast Switching Performance 75 AMPERES Low RDS(on) to Minimize Conduction Loss Low Ciss to Minimize Driver Loss 25 VOLTS Low Gate Charge RDS(on) = 5.6 mW (Typ) Pb-Free Packages are Available 4 MAXIMUM RATINGS (TJ = 25 C Unless otherwis
Otros transistores... NTP6411ANG , NTP6412ANG , NTP6413ANG , NTP65N02R , NTP75N03-6G , NTP75N03L09 , NTP75N03R , NTP75N06 , AON6414A , NTP85N03 , NTP8G202N , NTP8G206N , NTP90N02 , NTQS6463R2 , NTR0202PLT1 , NTR1P02L , NTR1P02T1 .
Liste
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