NTR1P02T3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: NTR1P02T3
   Código: P2
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.4 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 1 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.3 V
   Qgⓘ - Carga de la puerta: 2.5 nC
   trⓘ - Tiempo de subida: 9 nS
   Cossⓘ - Capacitancia de salida: 110 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.18 Ohm
   Paquete / Cubierta: SOT-23

Búsqueda de reemplazo de MOSFET NTR1P02T3

NTR1P02T3 Datasheet (PDF)

..1. Size:125K onsemi
ntr1p02t1 ntr1p02t3.pdf

NTR1P02T1, NVR1P02T1Power MOSFET-20 V, -1 A, P-Channel SOT-23 PackageFeatures Ultra Low On-Resistance Provides Higher Efficiencyand Extends Battery Lifehttp://onsemi.comRDS(on) = 0.180 W, VGS = -10 VRDS(on) = 0.280 W, VGS = -4.5 VV(BR)DSS RDS(on) TYP ID MAX Power Management in Portable and Battery-Powered Products Miniature SOT-23 Surface Mount Package Saves Board

6.1. Size:56K onsemi
ntr1p02t1-d.pdf

NTR1P02T1Power MOSFET-20 V, -1 A, P-Channel SOT-23 PackageFeatures Ultra Low On-Resistance Provides Higher Efficiencyhttp://onsemi.comand Extends Battery LifeRDS(on) = 0.180 W, VGS = -10 VRDS(on) = 0.280 W, VGS = -4.5 VV(BR)DSS RDS(on) TYP ID MAX Power Management in Portable and Battery-Powered Products-20 V 148 mW @ -10 V -1.0 A Miniature SOT-23 Surface Mount P

7.1. Size:104K onsemi
ntr1p02l nvtr01p02l.pdf

NTR1P02L, NVTR01P02LPower MOSFET-20 V, -1.3 A, P-Channel SOT-23 PackageThese miniature surface mount MOSFETs low RDS(on) assurehttp://onsemi.comminimal power loss and conserve energy, making these devices idealfor use in space sensitive power management circuitry. TypicalV(BR)DSS RDS(on) Max ID Maxapplications are DC-DC converters and power management inportable and battery-

7.2. Size:95K onsemi
ntr1p02lt1 ntr1p02lt1h.pdf

NTR1P02LT1,NTR1P02LT1HPower MOSFET-20 V, -1.3 A, P-Channel SOT-23 Packagehttp://onsemi.comThese miniature surface mount MOSFETs low RDS(on) assureminimal power loss and conserve energy, making these devices ideal V(BR)DSS RDS(on) Max ID Maxfor use in space sensitive power management circuitry. Typical-20 V 220 mW -1.3 Aapplications are DC-DC converters and power management i

7.3. Size:85K onsemi
ntr1p02 nvr1p02.pdf

NTR1P02, NVR1P02Power MOSFET-20 V, -1 A, P-Channel SOT-23 PackageFeatures Ultra Low On-Resistance Provides Higher Efficiencyand Extends Battery Lifewww.onsemi.comRDS(on) = 0.180 W, VGS = -10 VRDS(on) = 0.280 W, VGS = -4.5 VV(BR)DSS RDS(on) TYP ID MAX Power Management in Portable and Battery-Powered Products Miniature SOT-23 Surface Mount Package Saves Board Space

7.4. Size:101K tysemi
ntr1p02l nvtr01p02l.pdf

Product specificationNTR1P02L, NVTR01P02LPower MOSFETV(BR)DSS RDS(on) Max ID Max-20 V, -1.3 A, P-Channel -20 V 220 mW @ -4.5 V -1.3 ASOT-23 PackageP-ChannelThese miniature surface mount MOSFETs low RDS(on) assure Dminimal power loss and conserve energy, making these devices idealfor use in space sensitive power management circuitry. Typicalapplications are DC-DC converters

7.5. Size:1491K kexin
ntr1p02lt1.pdf

SMD Type MOSFETP-Channel MOSFETNTR1P02LT1 (KTR1P02LT1)SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features VDS (V) =-20V ID =-1.3 A1 2 RDS(ON) 220m (VGS =-4.5V) +0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.1 RDS(ON) 350m (VGS =-2.5V)1. Gate2. SourceD3. DrainGS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating

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