NTR1P02T3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NTR1P02T3
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.4 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 1 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 9 nS
Cossⓘ - Capacitancia de salida: 110 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.18 Ohm
Paquete / Cubierta: SOT-23
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NTR1P02T3 Datasheet (PDF)
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NTR1P02T1Power MOSFET-20 V, -1 A, P-Channel SOT-23 PackageFeatures Ultra Low On-Resistance Provides Higher Efficiencyhttp://onsemi.comand Extends Battery LifeRDS(on) = 0.180 W, VGS = -10 VRDS(on) = 0.280 W, VGS = -4.5 VV(BR)DSS RDS(on) TYP ID MAX Power Management in Portable and Battery-Powered Products-20 V 148 mW @ -10 V -1.0 A Miniature SOT-23 Surface Mount P
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NTR1P02LT1,NTR1P02LT1HPower MOSFET-20 V, -1.3 A, P-Channel SOT-23 Packagehttp://onsemi.comThese miniature surface mount MOSFETs low RDS(on) assureminimal power loss and conserve energy, making these devices ideal V(BR)DSS RDS(on) Max ID Maxfor use in space sensitive power management circuitry. Typical-20 V 220 mW -1.3 Aapplications are DC-DC converters and power management i
Otros transistores... NTP85N03 , NTP8G202N , NTP8G206N , NTP90N02 , NTQS6463R2 , NTR0202PLT1 , NTR1P02L , NTR1P02T1 , IRLZ44N , NTR2101PT1G , NTR3161NT1G , NTR3162PT1G , NTR3A30PZ , NTR4003NT1G , NTR4101PT1G , NTR4170NT1G , NTR4171PT1G .
History: BUZ102 | STW30NM60D | CEF03N8 | SLP13N50A | AP09N50I | SSF70R300S2
History: BUZ102 | STW30NM60D | CEF03N8 | SLP13N50A | AP09N50I | SSF70R300S2



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