NTS4101PT1 Datasheet. Equivalente

 ..1. Size:96K  onsemi
 nts4101pt1.pdf

NTS4101P Power MOSFET -20 V, -1.37 A, Single P-Channel, SC-70 Features Leading -20 V Trench for Low RDS(on) http //onsemi.com -2.5 V Rated for Low Voltage Gate Drive V(BR)DSS RDS(on) Typ ID Max SC-70 Surface Mount for Small Footprint (2x2 mm) 83 mW @ -4.5 V Pb-Free Package is Available -20 V 88 mW @ -3.6 V -1.37 A Applications High Side Load Switch 104 mW @ -2.5

 0.1. Size:838K  cn vbsemi
 nts4101pt1g.pdf

NTS4101PT1G www.VBsemi.tw P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)c Qg (Typ.) Definition 0.080 at VGS = - 4.5 V - 3.1 TrenchFET Power MOSFET 4.3 nC - 20 0.100 at VGS = - 2.5 V - 2.3 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Load Switch DC/DC Conv

 0.2. Size:2471K  cn tech public
 tpnts4101pt1g.pdf

TPNTS4 1 01 PT1 G P-Channel Enhancement-Mode MOS FETs www.sot23.com.tw Features Applications (typ) @VGS =4.5V. -20V, -2.3A, RDS(ON) =100m Battery protection RDS(ON) = 125m (typ) @VGS = 2.5V. Load switch Power management SOT-323 package. Ordering Information Part Number Qty per Reel Reel Size TPNTS4101PT1G 3000 7 D S G SOT-323 Absolute Maximum Ratings (TA=

 6.1. Size:100K  onsemi
 nts4101p.pdf

NTS4101P Power MOSFET -20 V, -1.37 A, Single P-Channel, SC-70 Features Leading -20 V Trench for Low RDS(on) http //onsemi.com -2.5 V Rated for Low Voltage Gate Drive V(BR)DSS RDS(on) Typ ID Max SC-70 Surface Mount for Small Footprint (2x2 mm) 83 mW @ -4.5 V Pb-Free Package is Available -20 V 88 mW @ -3.6 V -1.37 A Applications High Side Load Switch 104 mW @ -2.5