NTTFS4930NTAG Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NTTFS4930NTAG 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.79 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 4.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 17.6 nS
Cossⓘ - Capacitancia de salida: 197 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.023 Ohm
Encapsulados: WDFN8
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NTTFS4930NTAG datasheet
nttfs4930ntag.pdf
NTTFS4930N Power MOSFET 30 V, 23 A, Single N-Channel, m8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(on) MAX ID MAX Compliant Applications 23 mW @ 10 V 30 V 23 A DC-DC
nttfs4930n.pdf
NTTFS4930N Power MOSFET 30 V, 23 A, Single N-Channel, m8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(on) MAX ID MAX Compliant Applications 23 mW @ 10 V 30 V 23 A DC-DC
nttfs4932n.pdf
NTTFS4932N MOSFET Power, Single, N-Channel, m8FL 30 V, 79 A Features http //onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses V(BR)DSS RDS(on) MAX ID MAX Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 4.0 mW @ 10 V 30 V 79 A Compliant 5.5 mW @ 4.5 V A
nttfs4932ntag.pdf
NTTFS4932N Power MOSFET 30 V, 79 A, Single N-Channel, m8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(on) MAX ID MAX Compliant Applications 4.0 mW @ 10 V 30 V 79 A Low-S
Otros transistores... NTTD4401FR2, NTTFS3A08PZ, NTTFS3A08PZTAG, NTTFS4821NTAG, NTTFS4823NTAG, NTTFS4824NTAG, NTTFS4928NTAG, NTTFS4929NTAG, IRFP250, NTTFS4932NTAG, NTTFS4937NTAG, NTTFS4939NTAG, NTTFS4941NTAG, NTTFS4985NF, NTTFS4C05N, NTTFS4C06N, NTTFS4C08N
Parámetros del MOSFET. Cómo se afectan entre sí.
History: HGP046NE6AL | JFAM50N50C
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