NTTFS4C05N MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Principales características: NTTFS4C05N

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NTTFS4C05N Power MOSFET 30 V, 75 A, Single N-Channel, m8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(on) MAX ID MAX Applications 3.6 mW @ 10 V DC-DC Converters

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NTTFS4C06N Power MOSFET 30 V, 67 A, Single N-Channel, m8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(on) MAX ID MAX Compliant 4.2 mW @ 10 V Applications 30 V 67 A 6.1 mW @

6.2. Size:206K onsemi
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NTTFS4C02N MOSFET Power, Single, N-Channel, m8FL 30 V, 170 A Features Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 2.25 mW @ 10 V 30 V 170 A Applications 3.1

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