NTTFS4H05NTAG MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NTTFS4H05NTAG
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 2.66 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 25 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 22.4 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 32 nS
Cossⓘ - Capacitancia de salida: 835 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0033 Ohm
Encapsulados: WDFN8
Búsqueda de reemplazo de NTTFS4H05NTAG MOSFET
- Selecciónⓘ de transistores por parámetros
NTTFS4H05NTAG datasheet
..1. Size:82K onsemi
nttfs4h05n nttfs4h05ntag.pdf 
NTTFS4H05N Power MOSFET 25 V, 94 A, Single N-Channel, m8-FL Features Optimized Design to Minimize Conduction and Switching Losses Optimized Package to Minimize Parasitic Inductances Optimized material for improved thermal performance http //onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant Applications VGS MAX RDS(on) TYP QGTOT Hi
4.1. Size:204K onsemi
nttfs4h05n.pdf
NTTFS4H05N MOSFET Power, Single, N-Channel, m8-FL 25 V, 94 A Features Optimized Design to Minimize Conduction and Switching Losses www.onsemi.com Optimized Package to Minimize Parasitic Inductances Optimized material for improved thermal performance These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS VGS MAX RDS(on) TYP QGTOT Compliant 4.5 V 4.8 mW 8.7
6.1. Size:80K onsemi
nttfs4h07n.pdf
NTTFS4H07N Power MOSFET 25 V, 66 A, Single N-Channel, m8-FL Features Optimized Design to Minimize Conduction and Switching Losses Optimized Package to Minimize Parasitic Inductances Optimized material for improved thermal performance http //onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant VGS MAX RDS(on) TYP QGTOT Applications Hi
8.2. Size:119K 1
nttfs4c25ntag.pdf
NTTFS4C25N Power MOSFET 30 V, 27 A, Single N-Channel, m8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(on) MAX ID MAX Applications 17 mW @ 10 V DC-DC Converters
8.3. Size:128K 1
nttfs4928ntag.pdf
NTTFS4928N MOSFET Power, Single, N-Channel, m8FL 30 V, 37 A Features http //onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses V(BR)DSS RDS(on) MAX ID MAX Optimized Gate Charge to Minimize Switching Losses 9.0 mW @ 10 V These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 30 V 37 A Compliant 13.5 mW @ 4.5 V
8.4. Size:118K 1
nttfs4c10ntag.pdf
NTTFS4C10N Power MOSFET 30 V, 44 A, Single N-Channel, m8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses www.onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(on) MAX ID MAX Compliant 7.4 mW @ 10 V Applications 30 V 44 A 11 mW @ 4.5
8.5. Size:195K onsemi
nttfs4932n.pdf
NTTFS4932N MOSFET Power, Single, N-Channel, m8FL 30 V, 79 A Features http //onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses V(BR)DSS RDS(on) MAX ID MAX Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 4.0 mW @ 10 V 30 V 79 A Compliant 5.5 mW @ 4.5 V A
8.6. Size:113K onsemi
nttfs4932ntag.pdf
NTTFS4932N Power MOSFET 30 V, 79 A, Single N-Channel, m8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(on) MAX ID MAX Compliant Applications 4.0 mW @ 10 V 30 V 79 A Low-S
8.7. Size:106K onsemi
nttfs4823ntag.pdf
NTTFS4823N Power MOSFET 30 V, 50 A, Single N-Channel, m8FL Features Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses http //onsemi.com Low Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(on) MAX ID MAX Compliant 10.5 mW @ 10 V 30 V 50 A Applications 17.5 mW @
8.8. Size:116K onsemi
nttfs4929ntag.pdf
NTTFS4929N Power MOSFET 30 V, 34 A, Single N-Channel, m8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(on) MAX ID MAX Compliant 11 mW @ 10 V Applications 30 V 34 A 17 mW @ 4.
8.9. Size:127K onsemi
nttfs4930n.pdf
NTTFS4930N Power MOSFET 30 V, 23 A, Single N-Channel, m8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(on) MAX ID MAX Compliant Applications 23 mW @ 10 V 30 V 23 A DC-DC
8.10. Size:111K onsemi
nttfs4939n-d.pdf
NTTFS4939N Power MOSFET 30 V, 52 A, Single N-Channel, m8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(on) MAX ID MAX Compliant Applications 5.5 mW @ 10 V 30 V 52 A Low-S
8.11. Size:111K onsemi
nttfs4941n.pdf
NTTFS4941N Power MOSFET 30 V, 46 A, Single N-Channel, m8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(on) MAX ID MAX Compliant Applications 6.2 mW @ 10 V 30 V 46 A Low-S
8.12. Size:119K onsemi
nttfs4c06n.pdf
NTTFS4C06N Power MOSFET 30 V, 67 A, Single N-Channel, m8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(on) MAX ID MAX Compliant 4.2 mW @ 10 V Applications 30 V 67 A 6.1 mW @
8.13. Size:122K onsemi
nttfs4928n.pdf
NTTFS4928N Power MOSFET 30 V, 37 A, Single N-Channel, m8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(on) MAX ID MAX Compliant 9.0 mW @ 10 V Applications 30 V 37 A 13.5 mW @
8.14. Size:105K onsemi
nttfs4824n.pdf
NTTFS4824N Power MOSFET 30 V, 69 A, Single N-Channel, m8FL Features Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses http //onsemi.com Low Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(on) MAX ID MAX Compliant 5.0 mW @ 10 V 30 V 69 A Applications 7.5 mW @ 4
8.15. Size:112K onsemi
nttfs4941ntag.pdf
NTTFS4941N Power MOSFET 30 V, 46 A, Single N-Channel, m8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(on) MAX ID MAX Compliant Applications 6.2 mW @ 10 V 30 V 46 A Low-S
8.16. Size:194K onsemi
nttfs4937n.pdf
NTTFS4937N MOSFET Power, Single, N-Channel, m8FL 30 V, 75 A Features http //onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses V(BR)DSS RDS(on) MAX ID MAX Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 4.5 mW @ 10 V 30 V 75 A Compliant 7.0 mW @ 4.5 V A
8.17. Size:206K onsemi
nttfs4c02n.pdf
NTTFS4C02N MOSFET Power, Single, N-Channel, m8FL 30 V, 170 A Features Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 2.25 mW @ 10 V 30 V 170 A Applications 3.1
8.18. Size:193K onsemi
nttfs4939n.pdf
NTTFS4939N MOSFET Power, Single, N-Channel, m8FL 30 V, 52 A Features http //onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses V(BR)DSS RDS(on) MAX ID MAX Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 5.5 mW @ 10 V 30 V 52 A Compliant 8.0 mW @ 4.5 V A
8.19. Size:111K onsemi
nttfs4928ntag.pdf
NTTFS4928N Power MOSFET 30 V, 37 A, Single N-Channel, m8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(on) MAX ID MAX Compliant 9.0 mW @ 10 V Applications 30 V 37 A 13.5 mW @
8.20. Size:106K onsemi
nttfs4824ntag.pdf
NTTFS4824N Power MOSFET 30 V, 69 A, Single N-Channel, m8FL Features Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses http //onsemi.com Low Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(on) MAX ID MAX Compliant 5.0 mW @ 10 V 30 V 69 A Applications 7.5 mW @ 4
8.21. Size:111K onsemi
nttfs4939ntag.pdf
NTTFS4939N Power MOSFET 30 V, 52 A, Single N-Channel, m8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(on) MAX ID MAX Compliant Applications 5.5 mW @ 10 V 30 V 52 A Low-S
8.22. Size:111K onsemi
nttfs4943n-d.pdf
NTTFS4943N Power MOSFET 30 V, 41 A, Single N-Channel, m8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(on) MAX ID MAX Compliant Applications 7.2 mW @ 10 V 30 V 41 A DC-DC
8.23. Size:115K onsemi
nttfs4c25n.pdf
NTTFS4C25N Power MOSFET 30 V, 27 A, Single N-Channel, m8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(on) MAX ID MAX Applications 17 mW @ 10 V DC-DC Converters
8.24. Size:127K onsemi
nttfs4929n.pdf
NTTFS4929N Power MOSFET 30 V, 34 A, Single N-Channel, m8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(on) MAX ID MAX Compliant 11 mW @ 10 V Applications 30 V 34 A 17 mW @ 4.
8.25. Size:116K onsemi
nttfs4930ntag.pdf
NTTFS4930N Power MOSFET 30 V, 23 A, Single N-Channel, m8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(on) MAX ID MAX Compliant Applications 23 mW @ 10 V 30 V 23 A DC-DC
8.26. Size:109K onsemi
nttfs4945n.pdf
NTTFS4945N Power MOSFET 30 V, 34 A, Single N-Channel, m8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(on) MAX ID MAX Compliant 9.0 mW @ 10 V Applications 30 V 34 A Power
8.27. Size:78K onsemi
nttfs4c13n.pdf
NTTFS4C13N Power MOSFET 30 V, 38 A, Single N-Channel, m8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX Applications 9.4 mW @ 10 V CPU Power Delive
8.28. Size:111K onsemi
nttfs4840n.pdf
NTTFS4840N Power MOSFET 30 V, 26 A, Single N-Channel, m8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(on) MAX ID MAX Applications 24 mW @ 10 V DC-DC Converters
8.29. Size:106K onsemi
nttfs4821ntag.pdf
NTTFS4821N Power MOSFET 30 V, 57 A, Single N-Channel, m8FL Features Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses http //onsemi.com Low Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(on) MAX ID MAX Compliant 7.0 mW @ 10 V 30 V 57 A Applications 10.8 mW @
8.30. Size:112K onsemi
nttfs4932n-d.pdf
NTTFS4932N Power MOSFET 30 V, 79 A, Single N-Channel, m8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(on) MAX ID MAX Compliant Applications 4.0 mW @ 10 V 30 V 79 A Low-S
8.31. Size:111K onsemi
nttfs4937n-d.pdf
NTTFS4937N Power MOSFET 30 V, 75 A, Single N-Channel, m8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(on) MAX ID MAX Compliant Applications 4.5 mW @ 10 V 30 V 75 A Low-S
8.32. Size:116K onsemi
nttfs4985nf.pdf
NTTFS4985NF Power MOSFET 30 V, 64 A, Single N-Channel, WDFN8 Features Integrated Schottky Diode Low RDS(on) to Minimize Conduction Losses http //onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 3.5 mW @ 10 V 30 V 64 A Applications
8.33. Size:105K onsemi
nttfs4821n.pdf
NTTFS4821N Power MOSFET 30 V, 57 A, Single N-Channel, m8FL Features Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses http //onsemi.com Low Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(on) MAX ID MAX Compliant 7.0 mW @ 10 V 30 V 57 A Applications 10.8 mW @
8.34. Size:105K onsemi
nttfs4823n.pdf
NTTFS4823N Power MOSFET 30 V, 50 A, Single N-Channel, m8FL Features Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses http //onsemi.com Low Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(on) MAX ID MAX Compliant 10.5 mW @ 10 V 30 V 50 A Applications 17.5 mW @
8.35. Size:109K onsemi
nttfs4c10n.pdf
NTTFS4C10N Power MOSFET 30 V, 44 A, Single N-Channel, m8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(on) MAX ID MAX Applications 7.4 mW @ 10 V DC-DC Converters
8.36. Size:112K onsemi
nttfs4937ntag.pdf
NTTFS4937N Power MOSFET 30 V, 75 A, Single N-Channel, m8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(on) MAX ID MAX Compliant Applications 4.5 mW @ 10 V 30 V 75 A Low-S
8.37. Size:112K onsemi
nttfs4c05n.pdf
NTTFS4C05N Power MOSFET 30 V, 75 A, Single N-Channel, m8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(on) MAX ID MAX Applications 3.6 mW @ 10 V DC-DC Converters
8.38. Size:111K onsemi
nttfs4800n-d.pdf
NTTFS4800N Power MOSFET 30 V, 32 A, Single N-Channel, m8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(on) MAX ID MAX Applications 20 mW @ 10 V DC-DC Converters
Otros transistores... NTTFS4985NF
, NTTFS4C05N
, NTTFS4C06N
, NTTFS4C08N
, NTTFS4C10N
, NTTFS4C13N
, NTTFS4C25N
, NTTFS4H05N
, STF13NM60N
, NTTFS4H07N
, NTTFS5116PLTAG
, NTTFS5811NLTAG
, NTTFS5820NLTAG
, NTTFS5826NLTAG
, NTTS2P02R2
, NTTS2P03R2
, NTY100N10
.
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