NTTFS5820NLTAG Todos los transistores

 

NTTFS5820NLTAG MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NTTFS5820NLTAG

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.7 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 11 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 28 nS

Cossⓘ - Capacitancia de salida: 150 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0115 Ohm

Encapsulados: WDFN8

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NTTFS5820NLTAG datasheet

 ..1. Size:107K  1
nttfs5820nltag.pdf pdf_icon

NTTFS5820NLTAG

NTTFS5820NL Power MOSFET 60 V, 37 A, 11.5 mW Features Low RDS(on) http //onsemi.com Low Capacitance Optimized Gate Charge V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 11.5 mW @ 10 V 60 V 37 A 15 mW @ 4.5 V MAXIMUM RATINGS (TJ = 25 C unless otherwise stated) Parameter Symbol Value Unit N-Channel MOSFET Drain-to-Source Voltage VDSS

 ..2. Size:107K  onsemi
nttfs5820nltag.pdf pdf_icon

NTTFS5820NLTAG

NTTFS5820NL Power MOSFET 60 V, 37 A, 11.5 mW Features Low RDS(on) http //onsemi.com Low Capacitance Optimized Gate Charge V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 11.5 mW @ 10 V 60 V 37 A 15 mW @ 4.5 V MAXIMUM RATINGS (TJ = 25 C unless otherwise stated) Parameter Symbol Value Unit N-Channel MOSFET Drain-to-Source Voltage VDSS

 3.1. Size:110K  onsemi
nttfs5820nl.pdf pdf_icon

NTTFS5820NLTAG

NTTFS5820NL Power MOSFET 60 V, 37 A, 11.5 mW Features Low RDS(on) http //onsemi.com Low Capacitance Optimized Gate Charge V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 11.5 mW @ 10 V 60 V 37 A 15 mW @ 4.5 V MAXIMUM RATINGS (TJ = 25 C unless otherwise stated) Parameter Symbol Value Unit N-Channel MOSFET Drain-to-Source Voltage VDSS

 6.1. Size:108K  1
nttfs5826nltag.pdf pdf_icon

NTTFS5820NLTAG

NTTFS5826NL Power MOSFET 60 V, 24 mW, Single N-Channel, m8FL Features Small Footprint (3.3 x 3.3 mm) for Compact Designs Low QG(TOT) to Minimize Switching Losses Low Capacitance to Minimize Driver Losses http //onsemi.com These are Pb-Free Devices V(BR)DSS RDS(on) MAX ID MAX Applications Motor Drivers 24 mW @ 10 V 60 V 20 A DC-DC Converters 32 mW @ 4.5 V

Otros transistores... NTTFS4C10N , NTTFS4C13N , NTTFS4C25N , NTTFS4H05N , NTTFS4H05NTAG , NTTFS4H07N , NTTFS5116PLTAG , NTTFS5811NLTAG , P60NF06 , NTTFS5826NLTAG , NTTS2P02R2 , NTTS2P03R2 , NTY100N10 , NTZD3154NT1G , NTZD3155CT1G , NTZS3151PT1G , 3SK290 .

History: FCP260N65S3 | WMM13N50C4

 

 

 

 

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