NTZD3154NT1G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: NTZD3154NT1G
   Código: TV
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.25 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 6 V
   |Id|ⓘ - Corriente continua de drenaje: 0.54 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1 V
   Qgⓘ - Carga de la puerta: 1.5 nC
   trⓘ - Tiempo de subida: 4 nS
   Cossⓘ - Capacitancia de salida: 13 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.55 Ohm
   Paquete / Cubierta: SOT-563

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NTZD3154NT1G Datasheet (PDF)

..1. Size:57K onsemi
ntzd3154nt1g.pdf

NTZD3154NSmall Signal MOSFET20 V, 540 mA, Dual N-ChannelFeatures Low RDS(on) Improving System Efficiency Low Threshold Voltagehttp://onsemi.com Small Footprint 1.6 x 1.6 mm ESD Protected GateV(BR)DSS RDS(on) TYP ID Max (Note 1) These are Pb-Free Devices400 mW @ 4.5 VApplications20 500 mW @ 2.5 V 540 mA Load/Power Switches700 mW @ 1.8 V Power

5.1. Size:139K onsemi
ntzd3154n.pdf

NTZD3154NSmall Signal MOSFET20 V, 540 mA, Dual N-ChannelFeatures Low RDS(on) Improving System Efficiency http://onsemi.com Low Threshold VoltageV(BR)DSS RDS(on) Typ ID Max (Note 1) Small Footprint 1.6 x 1.6 mm ESD Protected Gate 400 mW @ 4.5 V20 500 mW @ 2.5 V 540 mA These are Pb-Free Devices700 mW @ 1.8 VApplications Load/Power SwitchesD1 D2 P

7.1. Size:215K onsemi
ntzd3155c.pdf

NTZD3155CMOSFET Small Signal,Complementary with ESDProtection, SOT-56320 V, 540 mA / -430 mAwww.onsemi.comFeaturesID Max Leading Trench Technology for Low RDS(on) PerformanceV(BR)DSS RDS(on) Typ (Note 1) High Efficiency System Performance0.4 W @ 4.5 V Low Threshold VoltageN-Channel0.5 W @ 2.5 V 540 mA20 V ESD Protected Gate0.7 W @ 1.8 V Sma

7.2. Size:104K onsemi
ntzd3158p.pdf

NTZD3158PSmall Signal MOSFET-20 V, -430 mA, Dual P-Channelwith ESD Protection, SOT-563Featureshttp://onsemi.com Low RDS(on) Improving System Efficiency Low Threshold VoltageV(BR)DSS RDS(on) Typ ID Max ESD Protected Gate0.5 W @ -4.5 V Small Footprint 1.6 x 1.6 mm-20 V 0.6 W @ -2.5 V -430 mA These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1.

7.3. Size:111K onsemi
ntzd3155c-d.pdf

NTZD3155CSmall Signal MOSFETComplementary 20 V, 540 mA / -430 mA,with ESD protection, SOT-563 package.Features http://onsemi.com Leading Trench Technology for Low RDS(on) PerformanceID Max High Efficiency System PerformanceV(BR)DSS RDS(on) Typ (Note 1) Low Threshold Voltage0.4 W @ 4.5 V ESD Protected Gate N-Channel0.5 W @ 2.5 V 540 mA20 V Small Footpri

7.4. Size:119K onsemi
ntzd3156c-d.pdf

NTZD3156CSmall Signal MOSFET20 V, 540 mA / -20 V, -430 mAComplementary N- and P-ChannelMOSFETs with Integrated Pull Up/DownResistor and ESD Protectionhttp://onsemi.comFeaturesID Max Leading Trench Technology for Low RDS(on) PerformanceV(BR)DSS RDS(on) Max (Note 1) High Efficiency System Performance0.55 W @ 4.5 V Low Threshold VoltageN-Channel0.7 W @ 2.5 V

7.5. Size:98K onsemi
ntzd3152p.pdf

NTZD3152PSmall Signal MOSFET-20 V, -430 mA, Dual P-Channelwith ESD Protection, SOT-563Features http://onsemi.com Low RDS(on) Improving System EfficiencyV(BR)DSS RDS(on) Typ ID Max Low Threshold Voltage0.5 W @ -4.5 V ESD Protected Gate-20 V 0.6 W @ -2.5 V -430 mA Small Footprint 1.6 x 1.6 mm1.0 W @ -1.8 V These are Pb-Free DevicesD1 D2Applications

7.6. Size:114K onsemi
ntzd3155ct1g.pdf

NTZD3155CSmall Signal MOSFETComplementary 20 V, 540 mA / -430 mA,with ESD protection, SOT-563 package.Featureshttp://onsemi.com Leading Trench Technology for Low RDS(on) Performance High Efficiency System PerformanceID Max Low Threshold Voltage V(BR)DSS RDS(on) Typ (Note 1) ESD Protected Gate0.4 W @ 4.5 VN-Channel0.5 W @ 2.5 V 540 mA Small Footprint 1.

7.7. Size:1681K cn vbsemi
ntzd3155ct2g.pdf

NTZD3155CT2Gwww.VBsemi.twN- and P-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.020 at VGS = 10 V 0.6 TrenchFET Power MOSFETN-Channel 200.025 at VGS = 4.5 V0.55 100 % Rg Tested0.040 at VGS = - 10 V - 0.4 Compliant to RoHS Directive 2002/95/ECP-Channel - 200.045 at

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