CEP6030L Todos los transistores

CEP6030L/CEB6030L N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 52A,RDS(ON) = 13.5m @VGS = 10V. RDS(ON) = 20m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES S TO-263(DD-PAK) TO-220 ABSOLUTE MAXIMUM RATINGS Tc

CEP6036/CEB6036 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 60V, 135A, RDS(ON) = 4.6m @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead-free plating ; RoHS compliant. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) S TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless ot

http //www.ncepower.com NCEP6035AQU NCE N-Channel Super Trench Power MOSFET Description The NCEP6035AQU uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high V =60V,I =35A DS D frequency switching performance. Both conduction and R =10.0m (typical) @ V =10V DS(ON) GS switching power losses are minimized due to an extremely low

http //www.ncepower.com NCEP6035AG NCE N-Channel Super Trench Power MOSFET Description The NCEP6035AG uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high VDS =60V,ID =35A frequency switching performance. Both conduction and RDS(ON)=9.8m (typical) @ VGS=10V switching power losses are minimized due to an extremely low RDS