3SK263 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 3SK263
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.2 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 15 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 8 V
|Id|ⓘ - Corriente continua de drenaje: 0.03 A
Tjⓘ - Temperatura máxima de unión: 125 °C
CARACTERÍSTICAS ELÉCTRICAS
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 70 Ohm
Encapsulados: SOT-143
Búsqueda de reemplazo de 3SK263 MOSFET
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3SK263 datasheet
3sk263.pdf
Ordering number ENN4423A N-Channel Silicon MOSFET (Dual Gate) 3SK263 FM Tuner, VHF Tuner, High-Frequency Amplifier Applications Features Package Dimensions Enhancement type. unit mm Small noise figure. 2096A Small cross modulation. [3SK263] 1.9 0.95 0.95 0.4 0.16 4 3 0 to 0.1 1 2 0.6 0.95 0.85 1 Drain 2.9 2 Source 3 Gate 1 4 Gate 2 SANYO CP4 Spec
3sk263.pdf
Ordering number EN4423D 3SK263 N-Channnel Dual Gate MOSFET http //onsemi.com 15V,30mA,PG=21dB,NF=1.1dB, CP4 Features Enhancement type Small noise figure Small cross modulation Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDS 15 V Gate1-to-Source Voltage VG1S 8 V Gate2-to-Source Voltage VG2S 8
3sk265.pdf
Ordering number ENN4902 N-Channel Silicon MOSFET 3SK265 VHF, CATV Tuner, High-Frequency Amplifier Applications Features Package Dimensions Enhancement type. unit mm Easy AGC (Cut off at VG2S=0V). 2096A Small noise figure. [3SK265] High power gain. 1.9 Ideally suited for RF amplifier of CATV wide-band 0.95 0.95 0.4 0.16 tuners. 4 3 0 to 0.1 1 2 0.6 0.95
Otros transistores... 3N188, 3N189, 3N60AF, 3N60F, 3N60G, 3N80A, 3N80AF, 3SK195, P55NF06, 3SK264, 3SK295, 3SK296, 3SK297, 3SK298, 3SK299, 3SK300, 3SK317
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