3SK263 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 3SK263
   Código: RJ
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 15 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 0.03 A
   Tjⓘ - Temperatura máxima de unión: 125 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(off)|ⓘ - Voltaje de corte de la puerta: 0.7 V
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 70 Ohm
   Paquete / Cubierta: SOT-143

Búsqueda de reemplazo de MOSFET 3SK263

3SK263 Datasheet (PDF)

..1. Size:82K sanyo
3sk263.pdf

Ordering number:ENN4423AN-Channel Silicon MOSFET (Dual Gate)3SK263FM Tuner, VHF Tuner,High-Frequency Amplifier ApplicationsFeatures Package Dimensions Enhancement type.unit:mm Small noise figure.2096A Small cross modulation.[3SK263]1.90.95 0.950.40.164 30 to 0.11 20.60.95 0.851 : Drain2.92 : Source3 : Gate 14 : Gate 2SANYO : CP4Spec

..2. Size:834K onsemi
3sk263.pdf

Ordering number : EN4423D3SK263N-Channnel Dual Gate MOSFEThttp://onsemi.com15V,30mA,PG=21dB,NF=1.1dB, CP4Features Enhancement type Small noise figure Small cross modulationSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDS 15 VGate1-to-Source Voltage VG1S 8 VGate2-to-Source Voltage VG2S 8

9.1. Size:195K toshiba
3sk260.pdf

3SK260 TOSHIBA Field Effect Transistor Silicon N Channel Dual Gate MOS Type 3SK260 TV Tuner VHF Mixer Applications Unit: mmVHF RF Amplifier Applications High conversion gain: GCS = 24.5dB (typ.) Low noise figure: NF = 3.3dB (typ.) CSMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitDrain-source voltage VDS 13.5 VGate 1-source voltage VG1S

9.2. Size:80K sanyo
3sk265.pdf

Ordering number:ENN4902N-Channel Silicon MOSFET3SK265VHF, CATV Tuner,High-Frequency Amplifier ApplicationsFeatures Package Dimensions Enhancement type.unit:mm Easy AGC (Cut off at VG2S=0V).2096A Small noise figure.[3SK265] High power gain.1.9 Ideally suited for RF amplifier of CATV wide-band 0.95 0.950.40.16tuners.4 30 to 0.11 20.60.95

9.3. Size:82K sanyo
3sk264.pdf

Ordering number:ENN4901N-Channel Silicon MOSFET3SK264VHF Tuner,High-Frequency Amplifier ApplicationsFeatures Package Dimensions Enhancement type.unit:mm Easy AGC (Cut off at VG2S=0V).2096A Small noise figure.[3SK264] Excels in cross modulation characteristics.1.90.95 0.950.40.164 30 to 0.11 20.60.95 0.851 : Drain2.92 : Source3 : Gate

9.4. Size:835K onsemi
3sk264.pdf

Ordering number : EN4901B3SK264N-Channnel Dual Gate MOSFEThttp://onsemi.com15V,30mA,PG=23dB,NF=1.1dB, CP4Features Enhancement type Easy AGC (Cut off at VG2S=0V) Small noise figure Excels in cross modulation characteristicsSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDS 15 VGate1-to-Sour

9.5. Size:32K panasonic
3sk268.pdf

High Frequency FETs 3SK2683SK268Silicon N-Channel 4-pin MOSUnit : mmFor VHF amplification2.1 0.10.425 1.25 0.1 0.425 Features Low noise-figure (NF)32 Large power gain PG Downsizing of sets by S-mini power package and automatic insertionby taping/magazine packing are available.41 Absolute Maximum Ratings (Ta = 25C)0.2 0.1Parameter Symbol Rating Unit1 : D

9.6. Size:32K panasonic
3sk269.pdf

High Frequency FETs 3SK2693SK269Silicon N-Channel 4-pin MOSUnit : mmFor VHF amplification2.1 0.10.425 1.25 0.1 0.425 Features Low noise-figure (NF)32 Large power gain PG Downsizing of sets by S-mini power package and automatic insertionby taping/magazine packing are available.41 Absolute Maximum Ratings (Ta = 25C)0.2 0.1Parameter Symbol Rating Unit1 : D

Otros transistores... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

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