3SK264 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 3SK264
Código: SJ
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 0.2 W
Voltaje máximo drenador - fuente |Vds|: 15 V
Voltaje máximo fuente - puerta |Vgs|: 8 V
Corriente continua de drenaje |Id|: 0.03 A
Temperatura máxima de unión (Tj): 125 °C
CARACTERÍSTICAS ELÉCTRICAS
Voltaje de corte de la puerta |Vgs(off)|: 0.7 V
Resistencia entre drenaje y fuente RDS(on): 60 Ohm
Paquete / Cubierta: SOT-143
Búsqueda de reemplazo de MOSFET 3SK264
3SK264 Datasheet (PDF)
3sk264.pdf
Ordering number:ENN4901N-Channel Silicon MOSFET3SK264VHF Tuner,High-Frequency Amplifier ApplicationsFeatures Package Dimensions Enhancement type.unit:mm Easy AGC (Cut off at VG2S=0V).2096A Small noise figure.[3SK264] Excels in cross modulation characteristics.1.90.95 0.950.40.164 30 to 0.11 20.60.95 0.851 : Drain2.92 : Source3 : Gate
3sk264.pdf
Ordering number : EN4901B3SK264N-Channnel Dual Gate MOSFEThttp://onsemi.com15V,30mA,PG=23dB,NF=1.1dB, CP4Features Enhancement type Easy AGC (Cut off at VG2S=0V) Small noise figure Excels in cross modulation characteristicsSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDS 15 VGate1-to-Sour
3sk260.pdf
3SK260 TOSHIBA Field Effect Transistor Silicon N Channel Dual Gate MOS Type 3SK260 TV Tuner VHF Mixer Applications Unit: mmVHF RF Amplifier Applications High conversion gain: GCS = 24.5dB (typ.) Low noise figure: NF = 3.3dB (typ.) CSMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitDrain-source voltage VDS 13.5 VGate 1-source voltage VG1S
3sk265.pdf
Ordering number:ENN4902N-Channel Silicon MOSFET3SK265VHF, CATV Tuner,High-Frequency Amplifier ApplicationsFeatures Package Dimensions Enhancement type.unit:mm Easy AGC (Cut off at VG2S=0V).2096A Small noise figure.[3SK265] High power gain.1.9 Ideally suited for RF amplifier of CATV wide-band 0.95 0.950.40.16tuners.4 30 to 0.11 20.60.95
3sk263.pdf
Ordering number:ENN4423AN-Channel Silicon MOSFET (Dual Gate)3SK263FM Tuner, VHF Tuner,High-Frequency Amplifier ApplicationsFeatures Package Dimensions Enhancement type.unit:mm Small noise figure.2096A Small cross modulation.[3SK263]1.90.95 0.950.40.164 30 to 0.11 20.60.95 0.851 : Drain2.92 : Source3 : Gate 14 : Gate 2SANYO : CP4Spec
3sk263.pdf
Ordering number : EN4423D3SK263N-Channnel Dual Gate MOSFEThttp://onsemi.com15V,30mA,PG=21dB,NF=1.1dB, CP4Features Enhancement type Small noise figure Small cross modulationSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDS 15 VGate1-to-Source Voltage VG1S 8 VGate2-to-Source Voltage VG2S 8
3sk268.pdf
High Frequency FETs 3SK2683SK268Silicon N-Channel 4-pin MOSUnit : mmFor VHF amplification2.1 0.10.425 1.25 0.1 0.425 Features Low noise-figure (NF)32 Large power gain PG Downsizing of sets by S-mini power package and automatic insertionby taping/magazine packing are available.41 Absolute Maximum Ratings (Ta = 25C)0.2 0.1Parameter Symbol Rating Unit1 : D
3sk269.pdf
High Frequency FETs 3SK2693SK269Silicon N-Channel 4-pin MOSUnit : mmFor VHF amplification2.1 0.10.425 1.25 0.1 0.425 Features Low noise-figure (NF)32 Large power gain PG Downsizing of sets by S-mini power package and automatic insertionby taping/magazine packing are available.41 Absolute Maximum Ratings (Ta = 25C)0.2 0.1Parameter Symbol Rating Unit1 : D
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