3SK264 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 3SK264
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.2 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 15 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 8 V
|Id|ⓘ - Corriente continua de drenaje: 0.03 A
Tjⓘ - Temperatura máxima de unión: 125 °C
CARACTERÍSTICAS ELÉCTRICAS
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 60 Ohm
Encapsulados: SOT-143
Búsqueda de reemplazo de 3SK264 MOSFET
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3SK264 datasheet
3sk264.pdf
Ordering number ENN4901 N-Channel Silicon MOSFET 3SK264 VHF Tuner, High-Frequency Amplifier Applications Features Package Dimensions Enhancement type. unit mm Easy AGC (Cut off at VG2S=0V). 2096A Small noise figure. [3SK264] Excels in cross modulation characteristics. 1.9 0.95 0.95 0.4 0.16 4 3 0 to 0.1 1 2 0.6 0.95 0.85 1 Drain 2.9 2 Source 3 Gate
3sk264.pdf
Ordering number EN4901B 3SK264 N-Channnel Dual Gate MOSFET http //onsemi.com 15V,30mA,PG=23dB,NF=1.1dB, CP4 Features Enhancement type Easy AGC (Cut off at VG2S=0V) Small noise figure Excels in cross modulation characteristics Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDS 15 V Gate1-to-Sour
3sk265.pdf
Ordering number ENN4902 N-Channel Silicon MOSFET 3SK265 VHF, CATV Tuner, High-Frequency Amplifier Applications Features Package Dimensions Enhancement type. unit mm Easy AGC (Cut off at VG2S=0V). 2096A Small noise figure. [3SK265] High power gain. 1.9 Ideally suited for RF amplifier of CATV wide-band 0.95 0.95 0.4 0.16 tuners. 4 3 0 to 0.1 1 2 0.6 0.95
Otros transistores... 3N189, 3N60AF, 3N60F, 3N60G, 3N80A, 3N80AF, 3SK195, 3SK263, 8205A, 3SK295, 3SK296, 3SK297, 3SK298, 3SK299, 3SK300, 3SK317, 3SK319
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