3SK298 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 3SK298

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.1 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 12 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 8 V

|Id|ⓘ - Corriente continua de drenaje: 0.025 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Cossⓘ - Capacitancia de salida: 1 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 50 Ohm

Encapsulados: SC82A

 Búsqueda de reemplazo de 3SK298 MOSFET

- Selecciónⓘ de transistores por parámetros

 

3SK298 datasheet

 ..1. Size:305K  renesas
3sk298.pdf pdf_icon

3SK298

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.1. Size:150K  toshiba
3sk294.pdf pdf_icon

3SK298

3SK294 TOSHIBA Field Effect Transistor Silicon N-Channel Dual Gate MOS Type 3SK294 TV Tuner, VHF RF Amplifier Application Unit mm Superior cross modulation performance Low reverse transfer capacitance C = 20 fF (typ.) rss Low noise figure NF = 1.4dB (typ.) Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Drain-source voltage VDS 12.5 V

 9.2. Size:186K  toshiba
3sk293.pdf pdf_icon

3SK298

3SK293 TOSHIBA Field Effect Transistor Silicon N-Channel Dual Gate MOS Type 3SK293 TV Tuner, UHF RF Amplifier Applications Unit mm Superior cross modulation performance Low reverse transfer capacitance C = 16 fF (typ.) rss Low noise figure NF = 1.5dB (typ.) Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Drain-source voltage VDS 12.5 V

 9.3. Size:185K  toshiba
3sk291.pdf pdf_icon

3SK298

3SK291 TOSHIBA Field Effect Transistor Silicon N-Channel Dual Gate MOS Type 3SK291 TV Tuner, UHF RF Amplifier Applications Unit mm Superior cross modulation performance Low reverse transfer capacitance C = 0.016 pF (typ.) rss Low noise figure NF = 1.5dB (typ.) Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Drain-source voltage VDS 12.

Otros transistores... 3N80A, 3N80AF, 3SK195, 3SK263, 3SK264, 3SK295, 3SK296, 3SK297, IRF9540, 3SK299, 3SK300, 3SK317, 3SK319, 3SK323, MSAFX40N30A, 40P03, 4AK17