3SK299 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

DATA SHEETMES FIELD EFFECT TRANSISTOR3SK299RF AMP. FOR UHF TV TUNERN-CHANNEL GaAs DUAL-GATE MES FIFLD-EFFECT TRANSISTOR4 PIN SMALL MINI MOLDFEATURESPACKAGE DIMENSIONS Suitable for use as RF amplifier in UHF TV tuner.in millimeters Low Crss : 0.02 pF TYP.2.10.2 High GPS : 20 dB TYP.1.250.1 Low NF : 1.1 dB TYP. 4 PIN SMALL MINI MOLD PACKAGEABSO

3SK294 TOSHIBA Field Effect Transistor Silicon N-Channel Dual Gate MOS Type 3SK294 TV Tuner, VHF RF Amplifier Application Unit: mm Superior cross modulation performance Low reverse transfer capacitance: C = 20 fF (typ.) rss Low noise figure: NF = 1.4dB (typ.) Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitDrain-source voltage VDS 12.5 V

3SK293 TOSHIBA Field Effect Transistor Silicon N-Channel Dual Gate MOS Type 3SK293 TV Tuner, UHF RF Amplifier Applications Unit: mm Superior cross modulation performance Low reverse transfer capacitance: C = 16 fF (typ.) rss Low noise figure: NF = 1.5dB (typ.) Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitDrain-source voltage VDS 12.5 V

3SK291 TOSHIBA Field Effect Transistor Silicon N-Channel Dual Gate MOS Type 3SK291 TV Tuner, UHF RF Amplifier Applications Unit: mm Superior cross modulation performance Low reverse transfer capacitance: C = 0.016 pF (typ.) rss Low noise figure: NF = 1.5dB (typ.) Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitDrain-source voltage VDS 12.

3SK292 TOSHIBA Field Effect Transistor Silicon N-Channel Dual Gate MOS Type 3SK292 TV Tuner, VHF RF Amplifier Application Unit: mm Superior cross modulation performance. Low reverse transfer capacitance: C = 20 fF (typ.) rss Low noise figure: NF = 1.4dB (typ.) Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitDrain-source voltage VDS 12.5 V

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

3SK290Silicon N-Channel Dual Gate MOS FETADE-208-2711st. EditionApplicationUHF RF amplifierFeatures Low noise figure.NF = 2.3 dB Typ. at f = 900 MHz High gain.PG = 19.3 dB Typ. at f = 900 MHzOutlineCMPAK42311. Source42. Gate13. Gate24. Drain3SK290Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitDrain to source voltage VDS 12 VGat