3SK319 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 3SK319

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.15 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 6 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 6 V

|Id|ⓘ - Corriente continua de drenaje: 0.02 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Cossⓘ - Capacitancia de salida: 1.2 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 40 Ohm

Encapsulados: SC61AA

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3SK319 datasheet

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3SK319

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.1. Size:184K  renesas
 3sk318.pdf pdf_icon

3SK319

3SK318 Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier REJ03G0819-0200 (Previous ADE-208-600) Rev.2.00 Aug.10.2005 Features Low noise characteristics; (NF= 1.4 dB typ. at f= 900 MHz) Excellent cross modulation characteristics Capable low voltage operation; +B= 5V Outline RENESAS Package code PTSP0004ZA-A (Package name CMPAK-4) 2 3 1. Source 2.

 9.2. Size:190K  renesas
 3sk317.pdf pdf_icon

3SK319

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Otros transistores... 3SK264, 3SK295, 3SK296, 3SK297, 3SK298, 3SK299, 3SK300, 3SK317, 2N7002, 3SK323, MSAFX40N30A, 40P03, 4AK17, 4N60A, 4N60AF, 4N60G, 4N80A