4N60A Todos los transistores

 ..1. Size:451K  nell
 4n60a 4n60af 4n60g.pdf

RoHS 4N60 Series RoHS SEMICONDUCTOR Nell High Power Products N-Channel Power MOSFET (4A, 600Volts) DESCRIPTION The Nell 4N60 is a three-terminal silicon D D device with current conduction capability of 4A, fast switching speed, low on-state resistance, breakdown voltage rating of 600V, and max. threshold voltage of 4 volts. G They are designed for use in applications such

 0.1. Size:217K  1
 ssi4n60a ssw4n60a.pdf

 0.2. Size:501K  samsung
 sss4n60as.pdf

Advanced Power MOSFET FEATURES BVDSS = 600 V Avalanche Rugged Technology RDS(on) = 2.2 Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.3 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 25 A (Max.) @ VDS = 600V Lower RDS(ON) 2.037 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Va

 0.3. Size:503K  samsung
 ssw4n60a.pdf

Advanced Power MOSFET FEATURES BVDSS = 600 V Avalanche Rugged Technology RDS(on) = 2.5 Rugged Gate Oxide Technology Lower Input Capacitance ID = 4 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 25 A (Max.) @ VDS = 600V 2 Lower RDS(ON) 2.037 (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Chara

 0.4. Size:501K  samsung
 ssr4n60a.pdf

Advanced Power MOSFET FEATURES BVDSS = 600 V Avalanche Rugged Technology RDS(on) = 2.5 Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.8 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 25 A (Max.) @ VDS = 600V Lower RDS(ON) 2.037 (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Char

 0.5. Size:912K  samsung
 ssp4n60as.pdf

Advanced Power MOSFET FEATURES BVDSS = 600 V Avalanche Rugged Technology RDS(on) = 2.5 Rugged Gate Oxide Technology Lower Input Capacitance ID = 4 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 25 A (Max.) @ VDS = 600V Lower RDS(ON) 2.037 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Valu

 0.6. Size:37K  ixys
 ixsh24n60u1 ixsh24n60au1.pdf

HiPerFASTTM IGBT with Diode VCES IC25 VCE(sat) IXSH 24N60U1 600 V 48 A 2.2 V Short Circuit SOA Capability IXSH 24N60AU1 600 V 48 A 2.7 V Symbol Test Conditions Maximum Ratings TO-247 AD VCES TJ = 25 C to 150 C600 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 600 V C (TAB) VGES Continuous 20 V G C VGEM Transient 30 V E G = Gate, C = Collector, IC25 TC = 25 C48 A E = Emitter, TAB

 0.7. Size:110K  ixys
 ixsh24n60a.pdf

Advance Technical Information VCES IC90 VCE(sat) HiPerFASTTM IGBT IXSH24N60 600V 24A 2.2V Short Circuit SOA Capability 600V 24A 2.7V IXSH24N60A TO-247 (IXSH) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V G TAB C VCGR TJ = 25 C to 150 C, RGE = 1M 600 V E VGES Continuous 20 V VGEM Transient 30 V G = Gate C = Collector IC25 TC = 25 C 48 A E = Em

 0.8. Size:36K  ixys
 ixsh24n60au1.pdf

HiPerFASTTM IGBT with Diode VCES IC25 VCE(sat) IXSH 24N60U1 600 V 48 A 2.2 V Short Circuit SOA Capability IXSH 24N60AU1 600 V 48 A 2.7 V Symbol Test Conditions Maximum Ratings TO-247 AD VCES TJ = 25 C to 150 C600 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 600 V C (TAB) VGES Continuous 20 V G C VGEM Transient 30 V E G = Gate, C = Collector, IC25 TC = 25 C48 A E = Emitter, TAB

 0.9. Size:183K  ixys
 ixgr64n60a3.pdf

Preliminary Technical Information VCES = 600V GenX3TM 600V IGBT IXGR64N60A3 IC110 = 47A VCE(sat) 1.35V Ultra-low Vsat PT IGBTs for up to 5kHz switching ISOPLUS247TM (IXGR) Symbol Test Conditions Maximum Ratings E153432 VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C, RGE = 1M 600 V VGES Continuous 20 V VGEM Transient 30 V G IC110 TC = 11

 0.10. Size:117K  ixys
 ixgh24n60aui.pdf

VCES = 600 V IXGH 24N60AU1 HiPerFASTTM IC25 = 48 A IXGH 24N60AU1S IGBT with Diode VCE(sat) = 2.7 V Combi Pack tfi = 275 ns TO-247 SMD (24N60AU1S) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V G C (TAB) E VGES Continuous 20 V VGEM Transient 30 V TO-247 AD IC25 TC = 25 C48 A (24N60AU1) IC90 TC = 90 C

 0.11. Size:192K  ixys
 ixgh64n60a3.pdf

Preliminary Technical Information IXGH64N60A3 VCES = 600V GenX3TM 600V IGBT IXGT64N60A3 IC110 = 64A Ultra-lowVsat PT IGBTs for up to VCE(sat) 1.35V 5 kHz switching Symbol Test Conditions Maximum Ratings TO-247 (IXGH) VCES TC = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C, RGE = 1M 600 V VGES Continuous 20 V VGEM Transient 30 V G C (TAB) C IC11

 0.12. Size:192K  ixys
 ixgt64n60a3.pdf

Preliminary Technical Information IXGH64N60A3 VCES = 600V GenX3TM 600V IGBT IXGT64N60A3 IC110 = 64A Ultra-lowVsat PT IGBTs for up to VCE(sat) 1.35V 5 kHz switching Symbol Test Conditions Maximum Ratings TO-247 (IXGH) VCES TC = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C, RGE = 1M 600 V VGES Continuous 20 V VGEM Transient 30 V G C (TAB) C IC11

 0.13. Size:421K  jiangsu
 cjd04n60a.pdf

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251S Plastic-Encapsulate MOSFETS CJD04N60A N-Channel Power MOSFET TO-251S GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Desighed for high voltage, high s

 0.14. Size:307K  jiangsu
 cju04n60a.pdf

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate MOSFETS CJU04N60A N-Channel Power MOSFET TO-252-2L GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Desighed for high voltage, hi

 0.15. Size:325K  jiangsu
 cjp04n60a.pdf

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate MOSFETS CJP04N60A N-Channel Power MOSFET TO-220-3L GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Desighed for high voltage, hi

 0.16. Size:315K  jiangsu
 cjpf04n60a.pdf

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate MOSFETS CJPF04N60A N-Channel Power MOSFET TO-220F GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Desighed for high voltage, high

 0.17. Size:333K  jiangsu
 cjb04n60a.pdf

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-263-2L Plastic-Encapsulate MOSFETS CJB04N60A N-Channel Power MOSFET TO-263-2L GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Desighed for high voltage, hi

 0.18. Size:530K  ark-micro
 ftu04n60a ftd04n60a.pdf

FTU04N60A/FTD04N60A 600V N-Channel MOSFET BVDSS RDS(ON) (Max.) ID General Features 600V 2.0 4.5A Low ON Resistance Low Gate Charge (typical 20nC) Fast Switching 100% Avalanche Tested RoHS Compliant Halogen-free available Applications High Efficiency SMPS Adaptor/Charger Active PFC LCD Panel Power Ordering Information P

 0.19. Size:666K  ark-micro
 ftp04n60a fta04n60a.pdf

FTP04N60A/FT A04N60A 600V N-Channel MOSFET BVDSS RDS(ON) (Max.) ID General Features 600V 2.0 4.5A Low ON Resistance Low Gate Charge (typical 20nC) Fast Switching 100% Avalanche Tested RoHS Compliant Halogen-free available Applications High Efficiency SMPS Adaptor/Charger Active PFC LCD Panel Power Ordering Information

 0.20. Size:315K  cystek
 mtn4n60afp.pdf

Spec. No. C408FP-B Issued Date 2010.03.15 CYStech Electronics Corp. Revised Date 2011.03.29 Page No. 1/10 N-Channel Enhancement Mode Power MOSFET BVDSS 600V RDS(ON) typ 2.8 MTN4N60AFP ID 4A Description The MTN4N60AFP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-r

 0.21. Size:239K  cystek
 mtn4n60ae3.pdf

Spec. No. C408E3-A Issued Date 2011.01.19 CYStech Electronics Corp. Revised Date Page No. 1/9 N-Channel Enhancement Mode Power MOSFET BVDSS 600V RDS(ON) 2.8 (typ.) MTN4N60AE3 ID 4A Description The MTN4N60AE3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance

 0.22. Size:1303K  belling
 bl4n60a-p bl4n60a-a bl4n60a-u bl4n60a-d.pdf

BL4N60A Power MOSFET 1 Description Step-Down Converter BL4N60A, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Pa

 0.23. Size:1158K  feihonltd
 fhu4n60a fhp4n60a fhd4n60a fhf4n60a.pdf

N N-CHANNEL MOSFET FHU4N60A/FHP4N60A/FHD4N60A/FHF4N60A MAIN CHARACTERISTICS FEATURES ID 4A Low gate charge VDSS 600V Crss ( 17pF) Low Crss (typical 17pF ) Rdson-typ @Vgs=10V 1.7 Fast switching Qg-typ 13.3nC 100% 100% avalanche tested

 0.24. Size:393K  samwin
 sw4n60a.pdf

SAMWIN SW4N60A N-channel TO-220F MOSFET BVDSS 600V Features TO-220F ID 4.0A High ruggedness RDS(ON) 2.2ohm RDS(ON) (Max 2.2 )@VGS=10V Gate Charge (Typ 22nC) Improved dv/dt Capability 1 2 2 100% Avalanche Tested 3 1. Gate 2. Drain 3. Source 1 General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN

 0.25. Size:618K  trinnotech
 tmp4n60az tmpf4n60az.pdf

TMP4N60AZ(G)/TMPF4N60AZ(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 600V 4.0A

 0.26. Size:464K  trinnotech
 tmd4n60az tmu4n60az.pdf

TMD4N60AZ(G)/TMU4N60AZ(G) N-channel MOSFET Features Low gate charge BVDSS ID RDS(on) 100% avalanche tested 600V 4.0A

 0.27. Size:351K  wuxi china
 cs4n60a4tdy.pdf

Silicon N-Channel Power MOSFET R CS4N60 A4TDY General Description VDSS 600 V CS4N60 A4TDY, the silicon N-channel Enhanced ID 4 A PD(TC=25 ) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.0 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

 0.28. Size:317K  wuxi china
 cs4n60a3hd.pdf

Huajing Discrete Devices R Silicon N-Channel Power MOSFET CS4N60 A3HD General Description VDSS 600 V CS4N60 A3HD, the silicon N-channel Enhanced ID 4 A PD(TC=25 ) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor

 0.29. Size:234K  wuxi china
 cs4n60a7hd.pdf

Silicon N-Channel Power MOSFET R CS4N60 A7HD General Description VDSS 600 V CS4N60 A7HD, the silicon N-channel Enhanced ID 4 A PD(TC=25 ) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe

 0.30. Size:356K  wuxi china
 cs4n60a3tdy.pdf

Silicon N-Channel Power MOSFET R CS4N60 A3TDY General Description VDSS 600 V CS4N60 A3TDY, the silicon N-channel Enhanced ID 4 A PD(TC=25 ) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.0 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p

 0.31. Size:343K  wuxi china
 cs4n60arrd.pdf

Silicon N-Channel Power MOSFET R CS4N60 ARRD General Description VDSS 600 V CS4N60 ARRD, the silicon N-channel Enhanced ID 4 A PD(TC=25 ) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe

 0.32. Size:220K  wuxi china
 cs4n60a3r.pdf

Silicon N-Channel Power MOSFET R CS4N60 A3R General Description VDSS 600 V CS4N60 A3R, the silicon N-channel Enhanced ID 4 A PD(TC=25 ) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.1 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

 0.33. Size:277K  wuxi china
 cs4n60a4r.pdf

Silicon N-Channel Power MOSFET R CS4N60 A4R General Description VDSS 600 V CS4N60 A4R, the silicon N-channel Enhanced ID 4 A PD(TC=25 ) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.1 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 0.34. Size:333K  wuxi china
 cs4n60a4hd.pdf

Huajing Discrete Devices R Silicon N-Channel Power MOSFET CS4N60 A4HD General Description VDSS 600 V CS4N60 A4HD, the silicon N-channel Enhanced ID 4 A PD(TC=25 ) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor

 0.35. Size:221K  wuxi china
 cs4n60a8hd.pdf

Silicon N-Channel Power MOSFET R CS4N60 A8HD General Description VDSS 600 V CS4N60 A8HD, the silicon N-channel Enhanced ID 4 A PD(TC=25 ) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 0.36. Size:722K  microne
 mem4n60thdg mem4n60thg mem4n60k3g mem4n60a3g.pdf

MEM4N60 N-CHANNEL POWER MOSFET MEM4N60 General Description Features 600V 4A Switching regulator application. RDS(ON)=2.3 @VGS=10V High voltage and high speed. LOW CRSS Switching application. FAST SWITCHING PACKAGE TO251,TO251S,TO252,TO-220F Pin Configuration MEM4N60THDG MEM4N60THG MEM4N60K3G MEM4N60A3G Maximum Ratings (Ta=25 ) P

 0.37. Size:226K  inchange semiconductor
 4n60as.pdf

isc N-Channel MOSFET Transistor 4N60AS DESCRIPTION Drain Current I = 4A@ T =25 D C Drain Source Voltage- V = 600V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) C SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage (V =0)