4N80AF Todos los transistores

 ..1. Size:373K  nell
 4n80a 4n80af.pdf

RoHS 4N80 Series RoHS SEMICONDUCTOR Nell High Power Products N-Channel Power MOSFET (4A, 800Volts) DESCRIPTION The Nell 4N80 is a three-terminal silicon device with current conduction capability of 4A, fast switching speed, low on-state resistance, D breakdown voltage rating of 800V ,and max. threshold voltage of 5 volts. They are designed for use in applications. such as sw

 9.1. Size:183K  1
 ssi4n80as ssw4n80as.pdf

 9.2. Size:184K  1
 ssi4n80a ssw4n80a.pdf

 9.3. Size:125K  samsung
 sss4n80as.pdf

SSS4N80AS Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS(on) = 3.0 Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.8 A Improved Gate Charge Extended Safe Operating Area TO-220F Lower Leakage Current 25 A (Max.) @ VDS = 800V Low RDS(ON) 2.450 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol C

 9.4. Size:500K  samsung
 sss4n80a.pdf

Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS(on) = 4.0 Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 25 A (Max.) @ VDS = 800V Low RDS(ON) 3.400 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Valu

 9.5. Size:507K  samsung
 ssw4n80a.pdf

Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS(on) = 4.0 Rugged Gate Oxide Technology Lower Input Capacitance ID = 4 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 25 A (Max.) @ VDS = 800V 2 Low RDS(ON) 3.400 (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Charact

 9.6. Size:860K  samsung
 ssp4n80a.pdf

Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS(on) = 4.0 Rugged Gate Oxide Technology Lower Input Capacitance ID = 4 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 25 A (Max.) @ VDS = 800V Low RDS(ON) 3.400 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value

 9.7. Size:211K  samsung
 ssh4n80as.pdf

SSH4N80AS Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS(on) = 3.0 Rugged Gate Oxide Technology Lower Input Capacitance ID = 4.5 A Improved Gate Charge Extended Safe Operating Area TO-3P Lower Leakage Current 25 A (Max.) @ VDS = 800V Low RDS(ON) 2. (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Charac

 9.8. Size:208K  samsung
 ssf4n80as.pdf

SSF4N80AS Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS(on) = 3.0 Rugged Gate Oxide Technology Lower Input Capacitance ID = 3.5 A Improved Gate Charge Extended Safe Operating Area TO-3PF Lower Leakage Current 25 A (Max.) @ VDS = 800V Low RDS(ON) 2.450 (Typ.)c 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol C

 9.9. Size:208K  samsung
 ssp4n80as.pdf

SSP4N80AS Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS(on) = 3.0 Rugged Gate Oxide Technology Lower Input Capacitance ID = 4.5 A Improved Gate Charge Extended Safe Operating Area TO-220 Lower Leakage Current 25 A (Max.) @ VDS = 800V Low RDS(ON) 2.450 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Ch

 9.10. Size:881K  samsung
 ssw4n80as.pdf

Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS(on) = 3.0 Rugged Gate Oxide Technology Lower Input Capacitance ID = 4.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 25 A (Max.) @ VDS = 800V 2 Low RDS(ON) 2.450 (Typ.)c 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Cha

 9.11. Size:64K  ixys
 ixtm4n80 ixtm4n80a ixtm4n90 ixtm4n90a ixtp4n80 ixtp4n80a ixtp4n90 ixtp4n90a.pdf

 9.12. Size:1178K  belling
 bl4n80a-p bl4n80a-a bl4n80a-u bl4n80a-d.pdf

BL4N80A Power MOSFET 1 Description Step-Down Converter BL4N80A, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Pa

 9.13. Size:705K  wuxi china
 cs4n80a3hd-g.pdf

Silicon N-Channel Power MOSFET R CS4N80 A3HD-G General Description VDSS 800 V CS4N80 A3HD-G, the silicon N-channel Enhanced ID 4 A PD(TC=25 ) 100 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.2 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

 9.14. Size:518K  wuxi china
 cs4n80a4hd-g.pdf

Silicon N-Channel Power MOSFET R CS4N80 A4HD-G VDSS 800 V General Description ID 4 A CS4N80 A4HD-G, the silicon N-channel Enhanced PD(TC=25 ) 100 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.2 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various