50N02 Todos los transistores

 ..1. Size:119K  sztuofeng
 50n02.pdf

Shen zhen TuoFeng industrial co., LTD 50N02 N-Channel Enhancement Mode MOSFET Features P i n D e s c r i p t i o n S 25V/50A, D RDS(ON)=8.5m (Typ.) @ VGS=10V D G S RDS(ON)=12m (Typ.) @ VGS=4.5V G Super High Dense Cell Design IPAK DPAK Reliable and Rugged TO-251 TO-252 Avalanche Rated D Lead Free and Green Devices Available (RoHS Compliant) G Applications Powe

 0.1. Size:1078K  rohm
 ruq050n02.pdf

1.5V Drive Nch MOSFET RUQ050N02 Structure Dimensions (Unit mm) Silicon N-channel MOSFET TSMT6 Features 1) Low On-resistance. 2) Space saving, small surface mount package (TSMT6). 3) 1.5V drive Applications Switching Each lead has same dimensions Abbreviated symbol XG Packaging specifications Inner circuit Package Taping (6) (5) (4) Type Code

 0.2. Size:143K  vishay
 sud50n02-04p.pdf

SUD50N02-04P Vishay Siliconix N-Channel 20 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a 175 C Junction Temperature 0.0043 at VGS = 10 V 34 PWM Optimized for High Efficiency 20 0.006 at VGS = 4.5 V 28 Material categorization For definitions of compliance please see www.vishay.com/doc?99912 TO-25

 0.3. Size:105K  vishay
 sud50n025-09bp.pdf

SUD50N025-09BP New Product Vishay Siliconix N-Channel 25-V (D-S) MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET VDS (V) rDS(on) (W) ID (A)a, e Qg (Typ) D 100% Rg Tested D RoHS Compliant 0.0086 @ VGS = 10 V 62 RoHS 25 18 5 nC 25 18.5 nC COMPLIANT 0.012 @ VGS = 4.5 V 52 APPLICATIONS D DC/DC Conversion, High-Side Desktop PC TO-252 D G Drain Connected to Tab G D

 0.4. Size:65K  vishay
 sud50n02-06.pdf

SUD50N02-06 Vishay Siliconix N-Channel 20-V (D-S), 175_C MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET VDS (V) rDS(on) (W) ID (A)a, b D 175_C Maximum Junction Temperature D 100% Rg Tested 0.006 @ VGS = 4.5 V 30 20 20 0.009 @ VGS = 2.5 V 25 D TO-252 G Drain Connected to Tab G D S Top View Order Number S SUD50N02-06 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (T

 0.5. Size:58K  vishay
 sud50n02-09p.pdf

SUD50N02-09P Vishay Siliconix N-Channel 20-V (D-S) 175_C MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET D 175_C Junction Temperature VDS (V) rDS(on) (W) ID (A)a D PWM Optimized for High Efficiency D 100% Rg Tested 0.0095 @ VGS = 10 V 20 20 20 0.017 @ VGS = 4.5 V 15 APPLICATIONS D High-Side Synchronous Buck DC/DC Conversion - Desktop D TO-252 - Server G Drain Conn

 0.6. Size:103K  vishay
 sud50n025-06p.pdf

SUD50N025-06P New Product Vishay Siliconix N-Channel 25-V (D-S) MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET VDS (V) rDS(on) (W) ID (A)a, e Qg (Typ) D 100% Rg Tested D RoHS Compliant 0.0062 @ VGS = 10 V 78 25 20 5 nC 25 20.5 nC 0.010 @ VGS = 4.5 V 62 APPLICATIONS D DC/DC Conversion, Low-Side - Desktop PC TO-252 D G Drain Connected to Tab G D S Top View S Ord

 0.7. Size:59K  vishay
 sud50n024-09p.pdf

SUD50N024-09P Vishay Siliconix N-Channel 22-V (D-S) 175_C MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET D 175_C Junction Temperature VDS (V) rDS(on) (W) ID (A)d D PWM Optimized for High Efficiency 0.0095 @ VGS = 10 V 49 24c 24c APPLICATIONS 0.017 @ VGS = 4.5 V 36 D High-Side Synchronous Buck DC/DC D Conversion TO-252 - Desktop - Server G Drain Connected to Tab

 0.8. Size:158K  vishay
 sud50n02-06p.pdf

SUD50N02-06P Vishay Siliconix N-Channel 20 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a 175 C Junction Temperature 0.0060 at VGS = 10 V PWM Optimized for High Efficiency 26 20 0.0095 at VGS = 4.5 V 100 % Rg Tested 21 Compliant to RoHS Directive 2002/95/EC APPLICATIONS Synchronous Buck DC/DC C

 0.9. Size:40K  vishay
 sud50n024-06p.pdf

SUD50N024-06P New Product Vishay Siliconix N-Channel 22-V (D-S) 175_C MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET VDS (V) rDS(on) (W) ID (A)d D 175_C Junction Temperature D PWM Optimized for High Efficiency 0.006 @ VGS = 10 V 80 24C 24C APPLICATIONS 0.0095 @ VGS = 4.5 V 64 D Synchronous Buck DC/DC Conversion - Desktop D - Server TO-252 G Drain Connected to Tab

 0.10. Size:110K  vishay
 sqd50n02-04l.pdf

SQD50N02-04L www.vishay.com Vishay Siliconix Automotive N-Channel 20 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) 20 Package with Low Thermal Resistance RDS(on) ( ) at VGS = 10 V 0.0043 AEC-Q101 Qualifiedd RDS(on) ( ) at VGS = 4.5 V 0.006 100 % Rg and UIS Tested ID (A) 50 Material categorization Configuration Single

 0.11. Size:540K  ruichips
 ruq050n02tr.pdf

1.5V Drive Nch MOSFET RUQ050N02 Structure Dimensions (Unit mm) Silicon N-channel MOSFET TSMT6 Features 1) Low On-resistance. 2) Space saving, small surface mount package (TSMT6). 3) 1.5V drive Applications Switching Each lead has same dimensions Abbreviated symbol XG Packaging specifications Inner circuit Package Taping (6) (5) (4) Type Code

 0.12. Size:1854K  ruichips
 ruq050n02fra.pdf

AEC-Q101 Qualified 1.5V Drive Nch MOSFET RUQ050N02 RUQ050N02FRA Structure Dimensions (Unit mm) Silicon N-channel MOSFET TSMT6 Features 1) Low On-resistance. 2) Space saving, small surface mount package (TSMT6). 3) 1.5V drive Applications Switching Each lead has same dimensions Abbreviated symbol XG Packaging specifications Inner circuit Package T

 0.13. Size:1050K  matsuki electric
 me50n02 me50n02-g.pdf

ME50N02 / ME50N02-G N- Channel 20V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 8m @VGS=10V The ME50N02 is the N-Channel logic enhancement mode power RDS(ON) 9m @VGS=4.5V field effect transistors are produced using high cell density, DMOS RDS(ON) 12m @VGS=2.5V trench technology. This high density process is especially tailored to Super high den

 0.14. Size:822K  slkor
 sl50n02d.pdf

SL50N02D 20V/50A N-Channel MOSFET Product Summary Features High density cell design for ultra low Rdson VDS RDS(ON) MAX ID MAX Fully characterized avalanche voltage and 10m @4.5V D2 20V S1 50A current D1 13m @2.5V Good stability and uniformity with high EAS D Excellent package for good heat dissipation Application Load switching Hard switched and high

 0.15. Size:751K  huashuo
 hsp150n02.pdf

HSP150N02 N-Ch 150V Fast Switching MOSFETs Description Product Summary The HSP150N02 is the highest performance VDS 150 V trench N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate RDS(ON),typ 12 m charge for most of the synchronous buck ID 120 A converter applications. The HSP150N02 meet the RoHS and Green Product requirement, 100% EA

 0.16. Size:609K  jiejie micro
 jmtq050n02a.pdf

JMTQ050N02A Description JMT N-channel Enhancement Mode Power MOSFET Features Applications 20V, 50A Load Switch RDS(ON)

 0.17. Size:920K  cn hunteck
 htj450n02.pdf

HTJ450N02 P-1 20V N-Ch Power MOSFET Feature 20 V VDS High Speed Power Switching, Logic Level 36 RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness 43 RDS(on),typ VGS=2.5V m 100% UIS Tested, 100% Rg Tested 58 RDS(on),typ VGS=1.8V m Lead Free, Halogen Free 3.6 A ID (Sillicon Limited) Application Hard Switching and High Speed Circuit Drain DC/D