50N02 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Shen zhen TuoFeng industrial co., LTD50N02N-Channel Enhancement Mode MOSFETFeatures P i n D e s c r i p t i o nS 25V/50A,DRDS(ON)=8.5m (Typ.) @ VGS=10VDGSRDS(ON)=12m (Typ.) @ VGS=4.5VG Super High Dense Cell DesignIPAK DPAK Reliable and RuggedTO-251 TO-252 Avalanche RatedD Lead Free and Green Devices Available(RoHS Compliant)GApplications Powe

1.5V Drive Nch MOSFET RUQ050N02 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET TSMT6Features 1) Low On-resistance. 2) Space saving, small surface mount package (TSMT6). 3) 1.5V drive ApplicationsSwitching Each lead has same dimensions Abbreviated symbol : XGPackaging specifications Inner circuit Package Taping(6) (5) (4)Type Code

SUD50N02-04PVishay SiliconixN-Channel 20 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a 175 C Junction Temperature0.0043 at VGS = 10 V 34 PWM Optimized for High Efficiency200.006 at VGS = 4.5 V 28 Material categorization:For definitions of compliance please seewww.vishay.com/doc?99912TO-25

SUD50N025-09BPNew ProductVishay SiliconixN-Channel 25-V (D-S) MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETVDS (V) rDS(on) (W) ID (A)a, e Qg (Typ)D 100% Rg TestedD RoHS Compliant0.0086 @ VGS = 10 V 62 RoHS25 18 5 nC25 18.5 nCCOMPLIANT0.012 @ VGS = 4.5 V 52APPLICATIONSD DC/DC Conversion, High-Side Desktop PCTO-252DGDrain Connected to TabG D

SUD50N02-06Vishay SiliconixN-Channel 20-V (D-S), 175_C MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETVDS (V) rDS(on) (W) ID (A)a, bD 175_C Maximum Junction TemperatureD 100% Rg Tested0.006 @ VGS = 4.5 V 3020200.009 @ VGS = 2.5 V 25DTO-252GDrain Connected to TabG D STop ViewOrder Number: SSUD50N02-06N-Channel MOSFETABSOLUTE MAXIMUM RATINGS (T

SUD50N02-09PVishay SiliconixN-Channel 20-V (D-S) 175_C MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETD 175_C Junction TemperatureVDS (V) rDS(on) (W) ID (A)aD PWM Optimized for High EfficiencyD 100% Rg Tested0.0095 @ VGS = 10 V 2020200.017 @ VGS = 4.5 V 15 APPLICATIONSD High-Side Synchronous Buck DC/DCConversion- DesktopDTO-252- ServerGDrain Conn

SUD50N025-06PNew ProductVishay SiliconixN-Channel 25-V (D-S) MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETVDS (V) rDS(on) (W) ID (A)a, e Qg (Typ)D 100% Rg TestedD RoHS Compliant0.0062 @ VGS = 10 V 7825 20 5 nC25 20.5 nC0.010 @ VGS = 4.5 V 62APPLICATIONSD DC/DC Conversion, Low-Side- Desktop PCTO-252DGDrain Connected to TabG D STop ViewSOrd

SUD50N024-09PVishay SiliconixN-Channel 22-V (D-S) 175_C MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETD 175_C Junction TemperatureVDS (V) rDS(on) (W) ID (A)dD PWM Optimized for High Efficiency0.0095 @ VGS = 10 V 4924c24cAPPLICATIONS0.017 @ VGS = 4.5 V 36D High-Side Synchronous Buck DC/DCDConversionTO-252- Desktop- ServerGDrain Connected to Tab

SUD50N02-06PVishay SiliconixN-Channel 20 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a 175 C Junction Temperature0.0060 at VGS = 10 V PWM Optimized for High Efficiency26200.0095 at VGS = 4.5 V 100 % Rg Tested21 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Synchronous Buck DC/DC C

SUD50N024-06PNew ProductVishay SiliconixN-Channel 22-V (D-S) 175_C MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETVDS (V) rDS(on) (W) ID (A)d D 175_C Junction TemperatureD PWM Optimized for High Efficiency0.006 @ VGS = 10 V 8024C24CAPPLICATIONS0.0095 @ VGS = 4.5 V 64D Synchronous Buck DC/DC Conversion- DesktopD - ServerTO-252GDrain Connected to Tab

SQD50N02-04Lwww.vishay.comVishay SiliconixAutomotive N-Channel 20 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 20 Package with Low Thermal ResistanceRDS(on) () at VGS = 10 V 0.0043 AEC-Q101 QualifieddRDS(on) () at VGS = 4.5 V 0.006 100 % Rg and UIS TestedID (A) 50 Material categorization:Configuration Single

1.5V Drive Nch MOSFET RUQ050N02 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET TSMT6Features 1) Low On-resistance. 2) Space saving, small surface mount package (TSMT6). 3) 1.5V drive ApplicationsSwitching Each lead has same dimensions Abbreviated symbol : XGPackaging specifications Inner circuit Package Taping(6) (5) (4)Type Code

AEC-Q101 Qualified1.5V Drive Nch MOSFET RUQ050N02RUQ050N02FRAStructure Dimensions (Unit : mm) Silicon N-channel MOSFET TSMT6Features 1) Low On-resistance. 2) Space saving, small surface mount package (TSMT6). 3) 1.5V drive ApplicationsSwitching Each lead has same dimensionsAbbreviated symbol : XGPackaging specificationsInner circuitPackage T

ME50N02 / ME50N02-G N- Channel 20V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)8m@VGS=10V The ME50N02 is the N-Channel logic enhancement mode power RDS(ON)9m@VGS=4.5V field effect transistors are produced using high cell density, DMOS RDS(ON)12m@VGS=2.5V trench technology. This high density process is especially tailored to Super high den

SL50N02D 20V/50A N-Channel MOSFETProduct SummaryFeatures High density cell design for ultra low Rdson VDS RDS(ON) MAX ID MAX Fully characterized avalanche voltage and 10m@4.5VD220V S1 50AcurrentD113m@2.5V Good stability and uniformity with high EASD Excellent package for good heat dissipationApplication Load switching Hard switched and high

HSP150N02 N-Ch 150V Fast Switching MOSFETs Description Product Summary The HSP150N02 is the highest performance VDS 150 V trench N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate RDS(ON),typ 12 m charge for most of the synchronous buck ID 120 A converter applications. The HSP150N02 meet the RoHS and Green Product requirement, 100% EA

HTJ450N02 P-120V N-Ch Power MOSFETFeature20 VVDS High Speed Power Switching, Logic Level36RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness43RDS(on),typ VGS=2.5V m 100% UIS Tested, 100% Rg Tested58RDS(on),typ VGS=1.8V m Lead Free, Halogen Free3.6 AID (Sillicon Limited)Application Hard Switching and High Speed Circuit Drain DC/D