50N30C Todos los transistores

 ..1. Size:328K  nell
 50n30c.pdf

RoHS 50N30 Series RoHS SEMICONDUCTOR Nell High Power Products N-Channel Power MOSFET 50A, 300Volts DESCRIPTION The Nell 50N30 is a three-terminal silicon device with current conduction capability of 50A, fast switching speed, low on-state resistance, breakdown voltage rating of 300V, and max. threshold voltage of 6.5 volts. They are designed for use in applications such as G D

 9.1. Size:168K  vishay
 sqd50n30-4m0l.pdf

SQD50N03-4m0L www.vishay.com Vishay Siliconix Automotive N-Channel 30 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) 30 100 % Rg and UIS Tested RDS(on) ( ) at VGS = 10 V 0.0031 AEC-Q101 Qualifiedd RDS(on) ( ) at VGS = 4.5 V 0.0040 Material categorization ID (A) 50 For definitions of compliance please see Configuration Single

 9.2. Size:131K  ixys
 ixfk150n30p3 ixfx150n30p3.pdf

Advance Technical Information Polar3TM HiPerFETTM VDSS = 300V IXFK150N30P3 Power MOSFETs ID25 = 150A IXFX150N30P3 RDS(on) 19m trr 250ns N-Channel Enhancement Mode Avalanche Rated TO-264 (IXFK) Fast Intrinsic Diode G D Symbol Test Conditions Maximum Ratings S VDSS TJ = 25 C to 150 C 300 V Tab VDGR TJ = 25 C to 150

 9.3. Size:113K  ssdi
 sff50n30m sff50n30z.pdf

SFF50N30M Solid State Devices, Inc. SFF50N30Z 14701 Firestone Blvd * La Mirada, Ca 90638 Phone (562) 404-4474 * Fax (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER S DATA SHEET 50 AMP , 300 Volts, 50 m Part Number / Ordering Information 1/ Avalanche Rated N-channel SFF50N30 ___ ___ ___ Screening 2/ MOSFET __ = Not Screened

 9.4. Size:490K  silikron
 sspl50n30h.pdf

SSPL50N30H Main Product Characteristics VDSS 300V RDS(on) 45m (typ.) ID 50A Marking and P in TO- 247 Schematic Diagram Assignment Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recove

 9.5. Size:504K  belling
 bl50n30-w bl50n30-f.pdf

BL50N30 Power MOSFET Power MOSFET Power MOSFET Power MOSFET 1 Description BL50N30, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applicati

 9.6. Size:1274K  jestek
 jst150n30t2.pdf

JST150N30T2 30V,150A N-Channel Mosfet FEATURES TO-252 RDS(ON) 2.6m @VGS=10V RDS(ON) 3.4m @VGS=4.5V Simple Drive Requirement Low On-resistance MARKING N-CHANNEL MOSFET YYXX Absolute Maximum Ratings (T =25 unless otherwise specified) C Max. Symbol Parameter Units TO-252-4R V Drain-Source Voltage 30 V DSS V Gate-Source Voltage 20 V GSS T = 25