50N30C MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

RoHS 50N30 Series RoHS SEMICONDUCTORNell High Power ProductsN-Channel Power MOSFET50A, 300VoltsDESCRIPTION The Nell 50N30 is a three-terminal silicon devicewith current conduction capability of 50A, fast switchingspeed, low on-state resistance, breakdown voltagerating of 300V, and max. threshold voltage of 6.5 volts. They are designed for use in applications such as GD

SQD50N03-4m0Lwww.vishay.comVishay SiliconixAutomotive N-Channel 30 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 30 100 % Rg and UIS TestedRDS(on) () at VGS = 10 V 0.0031 AEC-Q101 QualifieddRDS(on) () at VGS = 4.5 V 0.0040 Material categorization:ID (A) 50For definitions of compliance please seeConfiguration Single

Advance Technical InformationPolar3TM HiPerFETTM VDSS = 300VIXFK150N30P3Power MOSFETs ID25 = 150AIXFX150N30P3 RDS(on) 19m trr 250nsN-Channel Enhancement ModeAvalanche RatedTO-264 (IXFK)Fast Intrinsic DiodeGDSymbol Test Conditions Maximum RatingsSVDSS TJ = 25C to 150C 300 V TabVDGR TJ = 25C to 150

SFF50N30M Solid State Devices, Inc. SFF50N30Z 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNERS DATA SHEET 50 AMP , 300 Volts, 50 m Part Number / Ordering Information 1/ Avalanche Rated N-channel SFF50N30 ___ ___ ___ Screening 2/ MOSFET __ = Not Screened

SSPL50N30H Main Product Characteristics: VDSS 300V RDS(on) 45m(typ.) ID 50A Marking and P in TO- 247 Schematic Diagram Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recove

BL50N30 Power MOSFET Power MOSFETPower MOSFETPower MOSFET 1 Description BL50N30, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applicati

JST150N30T230V,150AN-Channel MosfetFEATURESTO-252RDS(ON)2.6m @VGS=10V RDS(ON)3.4m @VGS=4.5VSimple Drive RequirementLow On-resistanceMARKING N-CHANNEL MOSFETYYXX Absolute Maximum Ratings (T =25 unless otherwise specified)CMax. Symbol Parameter UnitsTO-252-4RV Drain-Source Voltage 30 VDSSV Gate-Source Voltage 20 VGSST = 25