5N60G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 5N60G
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 54 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 VQgⓘ - Carga de la puerta: 15 nC
trⓘ - Tiempo de subida: 42 nS
Cossⓘ - Capacitancia de salida: 55 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2.2 Ohm
Paquete / Cubierta: TO-252
Búsqueda de reemplazo de MOSFET 5N60G
5N60G Datasheet (PDF)
5n60a 5n60af 5n60g.pdf
RoHS 5N60 Series RoHS SEMICONDUCTORNell High Power ProductsN-Channel Power MOSFET(5A, 600Volts)DESCRIPTIOND The Nell 5N60 is a three-terminal silicon Ddevice with current conduction capabilityof 5A, fast switching speed, low on-stateresistance, breakdown voltage rating of 600V,and max. threshold voltage of 4 volts.G They are designed for use in applications such
sgp15n60 sgw15n60g.pdf
SGP15N60 SGW15N60Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s GE Designed for: - Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - paral
sgb15n60g.pdf
SGB15N60 Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s GE Designed for: - Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-263-3-2 -
skb15n60g.pdf
SKB15N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s GE Designed for frequency inverters for washing machines, fans, pumps and vacuum cleaners NPT-Technology for 600V applications offers: - very tight
5n60l-tf3t-t 5n60g-tf3t-t 5n60l-tm3-t 5n60g-tm3-t 5n60l-tn3-r 5n60g-tn3-r 5n60l-k08-5060-r 5n60g-k08-5060-r.pdf
UNISONIC TECHNOLOGIES CO., LTD 5N60 Power MOSFET 5A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 5N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications
5n60l-ta3-t 5n60g-ta3-t 5n60l-tf1-t 5n60g-tf1-t 5n60l-tf2-t 5n60g-tf2-t 5n60l-tf3-t 5n60g-tf3-t.pdf
UNISONIC TECHNOLOGIES CO., LTD 5N60 Power MOSFET 5A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 5N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications
ssf5n60g.pdf
SSF5N60G Main Product Characteristics: VDSS 600V RDS(on) 1.88 (typ.) ID 5A TO-251 Marking a nd p in Sche ma ti c di agr a m Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery
mdf15n60gth mdp15n60gth.pdf
MDP15N60G / MDF15N60G N-Channel MOSFET 600V, 15A, 0.40 General Description Features These N-channel MOSFET are produced using advanced V = 600V DSMagnaChips MOSFET Technology, which provides low on- I = 15A @ V = 10V D GSstate resistance, high switching performance and excellent R 0.40 @ V = 10V DS(ON) GSquality. Applications These devices are sui
ncep055n60gu.pdf
http://www.ncepower.com NCEP055N60GUNCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP055N60GU uses Super Trench II technology that is VDS =60V,ID =75A uniquely optimized to provide the most efficient high frequency RDS(ON)=4.2m (Typ.) @ VGS=10V switching performance. Both conduction and switching power Excellent gate charge x RDS(on) p
ncep025n60g.pdf
http://www.ncepower.com NCEP025N60GNCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP025N60G uses Super Trench II technology that is VDS =60V,ID =165A uniquely optimized to provide the most efficient high frequency RDS(ON)=2.2m (typical) @ VGS=10V switching performance. Both conduction and switching power Excellent gate charge x RDS(on)
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: QM1830M3 | SUN830I | SUN830F | SUN830DN | SUN830D | SUN82A20CI | SUN50A20CI | SUN09A40D | SUN05A50ZF | SUN05A50ZD | SUN05A25F | SRN1865FD | SRN1860FD | SRN1860F | SRN1665FD | SRN1660FD