5N65F MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 5N65F
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 54 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua
de drenaje: 5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 42 nS
Cossⓘ - Capacitancia de salida: 55 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 2.4 Ohm
Encapsulados: TO-251
Búsqueda de reemplazo de 5N65F MOSFET
- Selecciónⓘ de transistores por parámetros
5N65F datasheet
..1. Size:373K nell
5n65a 5n65af 5n65f 5n65g.pdf 
RoHS 5N65 Series RoHS SEMICONDUCTOR Nell High Power Products N-Channel Power MOSFET (5A, 650Volts) DESCRIPTION D The Nell 5N65 is a three-terminal silicon D device with current conduction capability of 5A, fast switching speed, low on-state resistance, breakdown voltage rating of 650V, and max. threshold voltage of 4 volts. G They are designed for use in applications such
0.1. Size:2351K infineon
ikp15n65f5.pdf
IGBT High speed 5 FAST IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1 fast and soft antiparallel diode IKP15N65F5 650V DuoPack IGBT and Diode High speed switching series fifth generation Data sheet Industrial Power Control IKP15N65F5 High speed switching series fifth generation High speed 5 FAST IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1 fast and soft antiparal
0.2. Size:2352K infineon
ika15n65f5.pdf
IGBT High speed 5 FAST IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1 fast and soft antiparallel diode IKA15N65F5 650V DuoPack IGBT and Diode High speed switching series fifth generation Data sheet Industrial Power Control IKA15N65F5 High speed switching series fifth generation High speed 5 FAST IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1 fast and soft antiparal
0.3. Size:91K onsemi
ngtb35n65fl2.pdf
NGTB35N65FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft http //
0.4. Size:84K onsemi
ngtg35n65fl2.pdf
NGTG35N65FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. http //onsemi.com Features Extremely Eff
0.5. Size:82K onsemi
ngtg35n65fl2wg.pdf
NGTG35N65FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. www.onsemi.com Features Extremely Effici
0.6. Size:243K onsemi
ngtb75n65fl2.pdf
NGTB75N65FL2WG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. Features www.onsemi.com Extremely Efficient Trench with Field Stop Technology TJmax = 175 C 75 A, 650 V
0.7. Size:224K onsemi
ngtb35n65fl2wg.pdf
DATA SHEET www.onsemi.com IGBT - Field Stop II 35 A, 650 V VCEsat = 1.70 V NGTB35N65FL2WG Eoff = 0.28 mJ This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior C performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited fo
0.8. Size:239K onsemi
ngtb75n65fl2wg.pdf
NGTB75N65FL2WG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. Features www.onsemi.com Extremely Efficient Trench with Field Stop Technology TJmax = 175 C 75 A, 650 V
0.9. Size:1723K jilin sino
jcs15n65fei jcs15n65bei jcs15n65sei jcs15n65cei.pdf
N R N-CHANNEL MOSFET JCS15N65EI Package MAIN CHARACTERISTICS ID 15A VDSS 650V Rdson-max 0.52 Vgs=10V Qg-Typ 52.3nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge
0.10. Size:1109K jilin sino
jcs15n65fh.pdf
N R N-CHANNEL MOSFET JCS15N65H MAIN CHARACTERISTICS Package ID 15.0 A VDSS 650 V Rdson-Max 0.55 @Vgs=10V Qg-Typ 35.2 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge
0.12. Size:274K cystek
mtn5n65fp.pdf
Spec. No. C716FP Issued Date 2010.03.12 CYStech Electronics Corp. Revised Date 2011.03.30 Page No. 1/ 10 N-Channel Enhancement Mode Power MOSFET BVDSS 650V RDS(ON) 2 (typ.) MTN5N65FP ID 5A Description The MTN5N65FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-re
0.13. Size:829K crhj
cs5n65f a9h.pdf
Silicon N-Channel Power MOSFET R CS5N65F A9H General Description VDSS 650 V CS5N65F A9H, the silicon N-channel Enhanced VDMOSFETs, ID 5 A PD(TC=25 ) 32 W is obtained by the self-aligned planar Technology which reduce RDS(ON)Typ 1.6 the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe
0.14. Size:1064K cn wxdh
dhsj25n65f.pdf
DHSJ25N65F 25A 650V N-channel Super Junction Power MOSFET 1 Description This N-channel enhanced vdmosfets, is using advanced V = 650V DSS super junction technology and design to provide excellent Rdson with low gate charge. Which accords with the R = 110m DS(on) (TYP) RoHS standard. I = 25A D 2 Features Fast switching Low on resistance Low gate charge Low reve
0.15. Size:562K silan
svf5n65d svf5n65f.pdf
SVF5N65D/F 5A 650V N 2 SVF5N65D/F N MOS F-CellTM VDMOS 1 3 1. 2. 3.
0.18. Size:735K oriental semi
ost15n65frf.pdf
OST15N65FRF Enhancement Mode N-Channel Power IGBT General Description OST15N65FRF uses advanced Oriental-Semi s patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CE performance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technolog
0.19. Size:687K oriental semi
ost25n65fmf.pdf
OST25N65FMF Enhancement Mode N-Channel Power IGBT General Description OST25N65FMF uses advanced Oriental-Semi s patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CE performance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technolog
0.20. Size:668K way-on
wml15n65f2 wmk15n65f2 wmm15n65f2 wmn15n65f2 wmp15n65f2 wmo15n65f2.pdf
WML N65F2, WM F2 L15N65F2, WMK15N MM15N65F WMN , WMP15N MO15N65F N15N65F2, N65F2, WM F2 650V Super Ju MOSFET V 0.29 S unction Power M T Descrip ption WMOSTM F2 is Wa 2nd generation super ayon s junction MOSFET fam with fa body di F2 M mily ast iode. S series pro all benefits of a fast switching ovide b f s D S D G G G S D G SJ-MOSFE while of an extr
0.21. Size:709K wuxi china
cs5n65fa9h.pdf
Silicon N-Channel Power MOSFET R CS5N65F A9H General Description VDSS 650 V CS5N65F A9H, the silicon N-channel Enhanced ID 5 A PD(TC=25 ) 32 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.6 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe
0.22. Size:263K wuxi china
cs5n65fa9r.pdf
Silicon N-Channel Power MOSFET R CS5N65F A9R General Description VDSS 650 V CS5N65F A9R, the silicon N-channel Enhanced ID 5 A PD(TC=25 ) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power
0.23. Size:441K convert
cs5n65f cs5n65p cs5n65u cs5n65d.pdf
nvert Suzhou Convert Semiconductor Co ., Ltd. CS5N65F, CS5N65P, CS5N65U, CS5N65D 650V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking CS5N65F TO-2
0.24. Size:3045K first semi
fir5n65fg.pdf
FIR5N65FG 650V N-Channel MOSFET PIN Connection TO-220F Features Low Intrinsic Capacitances. Excellent Switching Characteristics. Extended Safe Operating Area. Unrivalled Gate Charge Qg=13.7nC (Typ.). BVDSS=650V,ID=4.5A G D S RDS(on) 2.6 (Max) @VG=10V 100% Avalanche Tested g Schematic dia ram D G S Marking Diagram Y = Year A = Assem
0.26. Size:1029K cn hmsemi
hms25n65 hms25n65d hms25n65f.pdf
HMS25N65/HMS25N65D/HMS25N65F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 115 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 2 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and ind
0.27. Size:443K cn hmsemi
hm5n65 hm5n65f.pdf
/ / 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using SL semi s 4.5A, 650V, RDS(on) = 3.0 @VGS = 10 V advanced planar stripe DMOS technology. Low gate charge ( typical 15nC) This advanced technology has been espe cially tailored to High ruggedness minimize o n-state r esistance, pr ovide superior switchi
0.28. Size:952K cn hmsemi
hms15n65 hms15n65f hms15n65d.pdf
HMS15N65D, HMS15N65, HMS15N65F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction VDS 650 V technology and design to provide excellent RDS(ON) with low RDS(ON) MAX 260 m gate charge. This super junction MOSFET fits the industry s ID 15 A AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power ap
0.29. Size:366K cn fx-semi
fxn5n65f.pdf
FXN5N65F Electrical Characteristics (TJ =25oC) Characteristics Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BVDSS ID = 250 A, VGS = 0V 660 - - V Gate Threshold Voltage VGS(th) - 2.0 4.0 VDS = VGS, ID = 250 A Drain Cut-Off Current IDSS VDS = 650V, VGS = 0V 1.0 - - A VGS = 30V, VDS = 0V - 0.1 Gate Leakage Current
0.30. Size:910K cn fx-semi
fxn5n65fm.pdf
FuXin Semiconductor Co., Ltd. Rev.A FXN5N65FM Features General Description VDS = 650V The FXN5N65FM uses advanced Silicon s MOSFET Technology, which provides high performance in on-state resistance, ID = 5A @VGS = 10V fast switching performance, and excellent quality. Very low on-resistance RDS(ON)
0.31. Size:422K cn luxin semi
ygw75n65f1.pdf
YGW75N65F1 650V /75A Trench Field Stop IGBT FEATURES V 650 V CE High breakdown voltage up to 650V for I 75 A C improved reliability V I =75A 1.7 V CE(SAT) C Trench-Stop Technology offering High speed switching High ruggedness, temperature stable Short circuit withstand time 5 s Low V CEsat Easy parallel switching capability due
0.32. Size:411K cn luxin semi
ygw75n65fp.pdf
YGW75N65FP 650V /75A Trench Field Stop IGBT FEATURES V 650 V CE High breakdown voltage up to 650V for I 75 A C improved reliability V I =75A 1.8 V CE(SAT) C Trench-Stop Technology offering High speed switching High ruggedness, temperature stable Short circuit withstand time 5 s Low V CEsat Easy parallel switching capability due
0.33. Size:1432K cn vgsemi
hckw75n65fh2.pdf
HCKW75N65FH2 @ Trench-FS Cool-Watt IGBT HCKW75N65FH2 is a 650V75A IGBT discrete with high speed soft switching of Trench Field stop technology.The product with a anti-parallel diode,has the characteristics of low V , high junction temperature and strong robustness. It is very suitable for products with cesat high switching frequency. Features CoolWatt@ Trench-FS technolo
Otros transistores... 50N30C, 5HB03N8, 5N20V, 5N60A, 5N60AF, 5N60G, 5N65A, 5N65AF, TK10A60D, 5N65G, 5N90A, 5N90AF, 65N06A, 65N06H, 6680A, 6HP04CH, 6HP04MH
