5N65G Todos los transistores

 

5N65G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 5N65G
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 54 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 15 nC
   trⓘ - Tiempo de subida: 42 nS
   Cossⓘ - Capacitancia de salida: 55 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2.4 Ohm
   Paquete / Cubierta: TO-252

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5N65G Datasheet (PDF)

 ..1. Size:373K  nell
5n65a 5n65af 5n65f 5n65g.pdf

5N65G
5N65G

RoHS 5N65 Series RoHS SEMICONDUCTORNell High Power ProductsN-Channel Power MOSFET(5A, 650Volts)DESCRIPTIOND The Nell 5N65 is a three-terminal silicon Ddevice with current conduction capabilityof 5A, fast switching speed, low on-stateresistance, breakdown voltage rating of 650V,and max. threshold voltage of 4 volts.G They are designed for use in applications such

 0.1. Size:270K  utc
5n65l-ta3-t 5n65g-ta3-t 5n65l-tf3-t 5n65g-tf3-t 5n65l-tf1-t 5n65g-tf1-t 5n65l-tf2-t.pdf

5N65G
5N65G

UNISONIC TECHNOLOGIES CO., LTD 5N65 Power MOSFET 5A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 5N65 is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications at power suppli

 0.2. Size:270K  utc
5n65l-tm3-t 5n65g-tm3-t 5n65l-tn3-r 5n65g-tn3-r 5n65g-tf2-t 5n65l-tf3t-t 5n65g-tf3t-t.pdf

5N65G
5N65G

UNISONIC TECHNOLOGIES CO., LTD 5N65 Power MOSFET 5A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 5N65 is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications at power suppli

 0.3. Size:256K  utc
15n65l-t47-t 15n65g-t47-t 15n65l-ta3-t 15n65g-ta3-t 15n65l-tc3-t 15n65g-tc3-t 15n65l-tf1-t 15n65g-tf1-t.pdf

5N65G
5N65G

UNISONIC TECHNOLOGIES CO., LTD 15N65 Power MOSFET 15A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 15N65 is an N-channel mode power MOSFET usingUTCs advanced technology to provide costumers with planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance and superior switching performance. It also can withstand high en

 0.4. Size:256K  utc
15n65l-tf2-t 15n65g-tf2-t 15n65l-tf3-t 15n65g-tf3-t 15n65l-tq2-t 15n65g-tq2-t 15n65l-tq2-r 15n65g-tq2-r.pdf

5N65G
5N65G

UNISONIC TECHNOLOGIES CO., LTD 15N65 Power MOSFET 15A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 15N65 is an N-channel mode power MOSFET usingUTCs advanced technology to provide costumers with planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance and superior switching performance. It also can withstand high en

 0.5. Size:700K  cn super semi
siw75n65g2l2a.pdf

5N65G
5N65G

SUPER-SEMISuper Junction Insulated Gate Bipolar Transistor650V Trench and Super Junction IGBTSI*75N65G2L2ARev. 1.1Jul. 2023www.supersemi.com.cnSIW75N65G2L2A650V Trench and Super Junction IGBTGeneral DescriptionSuper-Semi Trench and Super Junction IGBTs,VCE 650 Vdesigned according to the super junction (SJ)IC 75 Atechnology. The SJ-IGBT series provides lowVCE(sat)

 0.6. Size:701K  cn super semi
siw75n65g2h2a.pdf

5N65G
5N65G

SUPER-SEMISuper Junction Insulated Gate Bipolar Transistor650V Trench and Super Junction IGBTSI*75N65G2H2ARev. 1.1Jul. 2023www.supersemi.com.cnSIW75N65G2H2A650V Trench and Super Junction IGBTGeneral DescriptionSuper-Semi Trench and Super Junction IGBTs,VCE 650 Vdesigned according to the super junction (SJ)IC 75 Atechnology. The SJ-IGBT series provides lowVCE(sat)

 0.7. Size:1479K  cn vgsemi
hckw75n65gh2.pdf

5N65G
5N65G

HCKW75N65GH2@Trench-FS Cool-Watt IGBTHCKW75N65GH2 is a 650V75A IGBT discrete with high speed soft switching of TrenchField stop technology.The product with a SiC diode,has the characteristics of low V , highcesatjunction temperature and strong robustness. It is very suitable for products with high switchingfrequency. Features CoolWatt@ Trench-FS technology Lo

 0.8. Size:1333K  cn vgsemi
hckz75n65gh2.pdf

5N65G
5N65G

HCKZ75N65GH2@Trench-FS Cool-Watt IGBTHCKZ75N65GH2 is a 650V75A IGBT discrete with high speed soft switching of TrenchField stop technology.The product with a SiC diode,has the characteristics of low V , highcesatjunction temperature and strong robustness. It is very suitable for products with high switchingfrequency. Features CoolWatt@ Trench-FS technology Lo

 0.9. Size:476K  chongqing pingwei
5n65gs.pdf

5N65G
5N65G

5N65GS5 Amps,650 Volts N-Channel Super Junction Power MOSFETFEATURETO-252 5A,650V,R =0.90@V =10V/2.5ADS(ON)MAX GS Low gate charge Low Ciss Fast switching 100% avalanche tested Improved dv/dt capabilityAbsolute Maximum Ratings(T =25,unless otherwise noted)CParameter Symbol UNIT5N65GSDrain-Source Voltage V 650DSSVGate-Source Voltage V

Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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