75N08 Todos los transistores

 ..1. Size:1014K  tysemi
 75n08.pdf

SMDType IC DIP Type MOSFET SMDType IC DIP Type MOSFET Product specification 75N08 TO-220 10.16 0.20 3.18 0.10 2.54 0.20 (0.70) Features VDS=75V,RDS(on)=0.009 @VGS=10V,ID=30A VDS=75V,RDS(on)=0.011 @VGS=4.5V,ID=20A (1.00x45 ) MAX1.47 0.80 0.10 1 2 3 #1 0.35 0.10 +0.10 0.50 0.05 2.76 0.20 2.54TYP 2.54TYP [2.54 0.20] [2.54 0.20] 1 Gat

 ..2. Size:238K  inchange semiconductor
 75n08.pdf

INCHANGE Semiconductor isc N-Channel Mosfet Transistor 75N08 FEATURES Drain Current I = 75A@ T =25 D C Drain Source Voltage- V =80V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching mode power supplies General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a S

 0.1. Size:759K  1
 wfp75n08.pdf

Wisdom Semiconductor WFP75N08 N-Channel MOSFET Features 2. Drain Symbol RDS(on) (Max 0.015 )@VGS=10V Gate Charge (Typical 80nC) Improved dv/dt Capability, High Ruggedness 1. Gate 100% Avalanche Tested Maximum Junction Temperature Range (175 C) 3. Source General Description TO-220 This Power

 0.2. Size:297K  1
 ru75n08r.pdf

RU75N08R N-Channel Advanced Power MOSFET MOSFET Features Pin Description 75V/80A, RDS (ON) =8m (Typ.) @VGS=10V Ultra Low On-Resistance Exceptional dv/dt capability Fast Switching and Fully Avalanche Rated TO-220 100% avalanche tested 175 C Operating Temperature Lead Free and Green Available Applications Switching Application Systems N-Channel MO

 0.3. Size:626K  fairchild semi
 fdp75n08 fdp75n08a.pdf

July 2006 TM UniFET FDP75N08A 75V N-Channel MOSFET Features Description 75A, 75V, RDS(on) = 0.011 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 145nC) transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. Low Crss ( typical 86pF) This advanced technology has been especially tailored to

 0.4. Size:84K  vishay
 sup75n08-10 sub75n08-10.pdf

SUP/SUB75N08-10 Vishay Siliconix N-Channel 75-V (D-S), 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 75 0.010 75a D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB75N08-10 Top View N-Channel MOSFET SUP75N08-10 ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Unit Gate-Source Voltage VGS "20 V TC = 25_C 75

 0.5. Size:106K  vishay
 sup75n08-09l sub75n08-09l.pdf

SUP/SUB75N08-09L New Product Vishay Siliconix N-Channel 75-V (D-S), 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 0.009 @ VGS = 10 V 75 "75 a 75 "75 a 0.011 @ VGS = 4.5 V D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB75N08-09L Top View N-Channel MOSFET SUP75N08-09L ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter

 0.6. Size:1358K  infineon
 bsz075n08ns5.pdf

MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOS 5 Power-Transistor, 80 V BSZ075N08NS5 Data Sheet Rev. 2.1 Final Power Management & Multimarket OptiMOS 5 Power-Transistor, 80 V BSZ075N08NS5 TSDSON-8 FL 1 Description (enlarged source interconnection) Features Ideal for high frequency switching and sync. rec. Optimized technology for DC/DC conv

 0.7. Size:1266K  onsemi
 fdp75n08a.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 0.8. Size:156K  utc
 utt75n08.pdf

UNISONIC TECHNOLOGIES CO., LTD UTT75N08 Preliminary Power MOSFET 75A, 80V N-CHANNEL POWERTRENCH MOSFET 1 TO-220 DESCRIPTION The UTC UTT75N08 is an N-channel enhancement MOSFET, it uses UTC s advanced technology to provide the customers with 1 perfect RDS(ON), high switching speed, high current capacity and low TO-220F1 gate charge. The UTC UTT75N08 is suitable for D

 0.9. Size:40K  ssdi
 sff75n08m sff75n08z.pdf

SFF75N08M Solid State Devices, Inc. SFF75N08Z 14830 Valley View Blvd * La Mirada, Ca 90638 Phone (562) 404-7855 * Fax (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER S DATA SHEET 55 AMP (note 1) /75 Volts TO-254 and TO-254Z 8.5 mO N-Channel Trench Gate MOSFET Note 1 maximum current limited by package configuration Features Trench gate techn

 0.10. Size:1180K  blue-rocket-elect
 br75n08.pdf

BR75N08(BRCS75N08R) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220 N MOS N-CHANNEL MOSFET in a TO-220 Plastic Package. / Features , , Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for hig

 0.11. Size:270K  shantou-huashan
 hfp75n08.pdf

N-Channel MOSFET Shantou Huashan Electronic Devices Co.,Ltd. HFP75N08 APPLICATIONSL TO-220 Low Voltage high-Speed Switching. ABSOLUTE MAXIMUM RATINGS Ta=25 Tstg Storage Temperature -55 175 1 G Tj Operating Junction Temperature 150 2 D PD Allowable Power Dissipation

 0.12. Size:143K  tysemi
 kup75n08.pdf

SMDType IC DIP Type MOSFET Product specification KUP 75N08 Features VDS=75V,RDS(on)=0.009 @VGS=10V,ID=30A VDS=75V,RDS(on)=0.011 @VGS=4.5V,ID=20A 1 Gate 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain- Source Voltage VDS 75 V Gate-to-Source Voltage VGS 20 V ID 75 Continuous Drain Current @TC 25 = @TC

 0.13. Size:1011K  cn wxdh
 dh075n08 dh075n08e.pdf

DH075N08&DH075N08E 95A 80V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used V = 80V DSS advanced trench technology design, provided excellent 2 D Rdson and low gate charge. Which accords with the RoHS R = 7.1m TO-263 DS(on) (TYP) standard. G 1 R = 7.5m TO-220 DS(on) (TYP) 3 S 2 Features I = 95A D Low

 0.14. Size:292K  ruichips
 ru75n08l.pdf

RU75N08L N-Channel Advanced Power MOSFET Features Pin Description 75V/80A, D RDS (ON) =8m (Typ.)@VGS=10V Ultra Low On-Resistance 100% avalanche tested Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) G S TO252 D Applications High Speed Power Switching G S N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating Un

 0.15. Size:285K  ruichips
 ru75n08s.pdf

RU75N08S N-Channel Advanced Power MOSFET Features Pin Description 75V/80A, RDS (ON) =8m (typ.) @VGS=10V Ultra Low On-Resistance Exceptional dv/dt capability Fast Switching and Fully Avalanche Rated 100% avalanche tested TO-263 175 C Operating Temperature Lead Free and Green Available Applications Switching Application Systems N-Chan

 0.16. Size:443K  ruichips
 ru75n08.pdf

RU75N08 N-Channel Advanced Power MOSFET MOSFET Features Pin Description 75V/80A, RDS (ON) =8m VGS=10V IDS=40A Ultra Low On-Resistance TO-220 TO-220F Exceptional dv/dt capability Fast Switching and Fully Avalanche Rated 100% avalanche tested TO-263 TO-247 175 C Operating Temperature Lead Free and Green Available Applications Switching Application

 0.17. Size:1259K  winsemi
 sfp75n08r.pdf

SFP75N08R SFP75N08R SFP75N08R SFP75N08R Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features R (Max0.015 )@V =10v DS(on) GS Gate Charge(Typical 80 nC) Maximum Junction Temperature Range(175 ) General Description This Power MOSFET is produced using Winsemi s advanced planar stripe,DMOS technology. This lates

 0.18. Size:216K  foshan
 cs75n08.pdf

BR75N08(CS75N08) N-CHANNEL MOSFET/N MOS DC/DC Purpose These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. , , Features Low gate charge, low crss, fast switching. /Absolute maximum ratings(Ta=25

 0.19. Size:750K  cn vbsemi
 sup75n08-10.pdf

SUP75N08-10 www.VBsemi.tw N-Channel 80 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET a VDS (V) RDS(on) ( ) Max. ID (A) Qg (Typ.) 100 % Rg and UIS Tested 0.0065at VGS = 10 V 80 80 0.0070at VGS = 6.0 V 75 17.1 nC APPLICATIONS 0.0085at VGS = 4.5 V 65 Primary Side Switching TO-220AB Synchronous Rectification D DC/AC Inverters LED Backl